My Inquiry
My Account
Diodes Incorporated DMN2310UFD-7
- Part No.:
- DMN2310UFD-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-PowerUDFN
- Datasheet:
-
DMN2310UFD-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN1212-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,705
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2310UFD from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a U-DFN1212-3 (Type C) package, rated for 20V VDSS, 240 mΩ RDS(ON) @ VGS = 4.5V, and 1.7A continuous drain current at TA = +25°C. It features ultra-low gate threshold voltage (0.45–0.95V), ESD-protected gate, and low input capacitance (38 pF), enabling efficient load switching in space-constrained battery-powered systems.
For engineers reviewing the DMN2310UFD datasheet, DMN2310UFD pinout, DMN2310UFD application, or DMN2310UFD equivalent, this device is selected for low-voltage, high-efficiency power management where fast turn-on at 1.5V–2.5V gate drive, minimal conduction loss, and thermal robustness in compact DFN packaging are critical design requirements.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining low gate charge (Qg = 0.7 nC) and fast switching (tD(ON) = 5.5 ns, tF = 49 ns). Its sub-1V gate threshold enables direct interfacing with 1.8V and 2.5V logic outputs without level shifting.
The integrated body diode exhibits VSD = 0.7–1.2V at IS = 500mA and supports bidirectional current flow in load-switch and reverse-polarity protection configurations. Thermal resistance is specified as RθJA = 187°C/W (FR-4, minimal pad) and 114°C/W (enhanced layout with thermal vias).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage; suitable for 12V rail and Li-ion battery (≤4S) systems. |
| RDS(ON) | 240 mΩ @ VGS = 4.5V - Enables <170 mW conduction loss at 1.3A, critical for thermally limited PCB layouts. |
| VGS(TH) | 0.45–0.95 V - Ensures reliable turn-on with 1.2V–1.8V microcontroller GPIOs; eliminates need for gate driver ICs. |
| Qg | 0.7 nC - Low total gate charge reduces drive power and enables high-frequency PWM control up to ~1 MHz. |
| Ciss | 38 pF - Minimizes capacitive loading on driving source; supports clean edge integrity in high-speed digital switching. |
| PD | 0.67 W (min. pad) / 1.1 W (enhanced layout) - Defines maximum steady-state power dissipation under defined PCB thermal conditions. |
| TJ Range | −55°C to +150°C - Qualified for extended industrial and automotive ambient environments (non-AEC-Q101 certified per datasheet note). |
Pinout & Package
Package: U-DFN1212-3 (Type C), 1.2 mm × 1.2 mm × 0.5 mm, lead-free, halogen-free, RoHS-compliant. Exposed drain pad (D) on bottom surface for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts low-threshold logic-level drive; ESD-protected (HBM > 2 kV per datasheet). |
| D | Drain | Main current path output; connected to exposed thermal pad; must be soldered to PCB copper for thermal performance. |
| S | Source | Reference node for gate drive; tied to system ground or load return; defines VGS reference point. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) down to 0.45V enables direct drive from 1.2V/1.8V MCUs and PMICs without level shifters. |
| Low RDS(ON) at low VGS | 300 mΩ @ VGS = 2.5V ensures <230 mW loss at 0.87A-critical for always-on battery backup circuits. |
| ESD-protected gate | HBM rating >2 kV (per internal qualification) reduces risk of handling damage during SMT assembly and board test. |
| Low Ciss and Qg | 38 pF input capacitance and 0.7 nC gate charge minimize switching energy and enable >500 kHz PWM operation. |
| Green, RoHS-compliant construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); meets EU RoHS 3 and IATF 16949 manufacturing standards. |
Applications
| Battery Load Switching | USB Power Delivery Switch |
|---|---|
|
Use Scenario: Enabling/disabling power to peripheral modules (e.g., BLE radio, sensor hub) in portable medical devices to extend battery life. IC Role / Device Role: Low-side load switch controlling VBAT to subsystem rails; driven directly by 1.8V MCU GPIO. Use Value: Sub-1V turn-on eliminates external level shifter; 240 mΩ RDS(ON) limits dropout to <410 mV at 1.7A, preserving system efficiency. |
Use Scenario: Hot-swap protection and power path control in USB-C PD sink applications with 5V–20V input range. IC Role / Device Role: Reverse-polarity and overcurrent protected high-side switch (with external driver) in PD controller interface. Use Value: 20V VDSS withstands USB PD transient surges; low Qg supports fast fault response (<200 ns turn-off delay). |
| Smartphone Power Management | Industrial Sensor Node Supply |
|
Use Scenario: Discrete power gating for camera flash LED drivers and display backlight ICs in space-constrained smartphone PCBs. IC Role / Device Role: Compact, low-profile N-channel switch replacing larger SO-8 or TSOP-6 devices in multi-rail PMIC subsystems. Use Value: U-DFN1212-3 footprint (1.2×1.2 mm) saves >70% board area vs. standard SOT-23; thermal vias support 1.1W dissipation. |
Use Scenario: Remote wireless sensor nodes powered by coin-cell batteries requiring micropower shutdown modes. IC Role / Device Role: Always-on load switch isolating non-critical circuitry (e.g., RF transceiver, ADC bias) during sleep cycles. Use Value: IDSS ≤ 1 µA at VDS = 20V minimizes standby leakage; −55°C to +150°C rating supports outdoor deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | Lower RDS(ON) (160 mΩ @ 4.5V) but higher VGS(TH) (0.7–1.3V); same U-DFN1212-3 package. | Better conduction efficiency above 2.5V drive; less suitable for 1.8V-only systems. | Select when gate drive ≥2.5V is guaranteed and lower on-resistance is prioritized over ultra-low threshold. |
| AO3400 | Higher RDS(ON) (28 mΩ @ 10V, not specified at 4.5V); SOT-23 package; no ESD protection stated. | Larger footprint (2.9×1.3 mm), higher thermal resistance (~200°C/W), and no gate ESD rating limit reliability in automated assembly. | Choose only if cost is primary constraint and board space/thermal/ESD requirements are relaxed. |
Compared with DMN2310UFD, DMN2016LFG-7 delivers lower conduction loss at higher gate voltages but sacrifices 1.8V compatibility, while AO3400 trades package size and ESD robustness for legacy compatibility-making DMN2310UFD optimal for next-gen ultra-low-voltage, high-density designs.
Availability
DMN2310UFD is available at Aetrix Electronics and suitable for battery load switching, USB power delivery control, smartphone power gating, and industrial sensor node supply requiring stable component supply across production lifecycles.
Supply support for DMN2310UFD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN2310UFD belongs to Diodes' logic-level MOSFET product line, engineered specifically for high-efficiency, low-voltage power management in portable and space-constrained electronics.
FAQ
What is the maximum continuous drain current for DMN2310UFD at 70°C ambient?
At TA = +70°C, the continuous drain current is derated to 1.4 A (per Absolute Maximum Ratings table). This reflects thermal limitations of the U-DFN1212-3 package on standard FR-4 PCB; enhanced thermal layout (2 oz copper + vias) improves current capability.
Does DMN2310UFD require external gate resistors for stability?
No external gate resistor is required for basic switching, but a 5–10 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and low Ciss/Qg. The device's 0.7 nC Qg and 38 pF Ciss make it sensitive to layout-induced oscillation without proper gate control.
Is DMN2310UFD qualified to AEC-Q101 for automotive use?
No-the datasheet explicitly states that AEC-Q101 qualification requires special change control and PPAP capability, and DMN2310UFD is not listed as AEC-qualified. It is intended for industrial and consumer applications; automotive designs require contacting Diodes for qualified variants like DMN2310UFDQ-7.
How is the exposed drain pad on the U-DFN1212-3 package connected electrically and thermally?
The exposed pad is internally connected to the drain terminal and must be soldered to a PCB copper pour tied to the system drain net. It serves dual roles: electrical connection (carrying full drain current) and thermal path (reducing RθJA by up to 35% when using thermal vias to inner/ground layers).
DMN2310UFD-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 38 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 670mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN1212-3 (Type C)
DMN2310UFD-7 FAQ
1.How can I place an order for DMN2310UFD-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2310UFD-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2310UFD-7 reliable?
The price and inventory of DMN2310UFD-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2310UFD-7 is usually 5 days.
3.What payment methods are accepted for DMN2310UFD-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2310UFD-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2310UFD-7?
DMN2310UFD-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2310UFD-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2310UFD-7?
For technical support, including DMN2310UFD-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2310UFD-7 requirements.
6.How does Aetrix verify that DMN2310UFD-7 is sourced from the original manufacturer or authorized distributors?
All DMN2310UFD-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2310UFD-7 meets industry standards.
7.What is the process for return or replacement of DMN2310UFD-7?
All DMN2310UFD-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2310UFD-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2310UFD-7 part is unused and in its original packaging.
Return procedure for DMN2310UFD-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2310UFD-7 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
