Diodes Incorporated DMN2310UT-13

Overview

DMN2310UT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V V_DSS, 240mΩ R_DS(ON) at V_GS = 4.5V and 300mΩ at V_GS = 2.5V, with 1.2A continuous drain current at T_A = +25°C. It serves as a low-voltage load switch or synchronous rectifier in compact DC-DC converters.

For engineers reviewing the DMN2310UT-13 datasheet, DMN2310UT-13 pinout, DMN2310UT-13 application, or DMN2310UT-13 equivalent, key selection criteria include ultra-low gate charge (0.7nC), fast switching (t_R = 138ns), ESD-protected gate, thermal resistance of 253°C/W under enhanced layout, and compatibility with 1.8V logic-level drive.

Technical Context

This MOSFET employs planar silicon process optimized for low R_DS(ON) at sub-3V gate drive while maintaining low C_iss (38pF) and Cr_ss (6pF). Its threshold voltage range (0.45–0.95V) enables reliable turn-on with 1.8V microcontroller I/O.

The device integrates an intrinsic body diode with V_SD = 0.8–1.2V at 1A and supports pulsed drain current up to 4.2A. Thermal design relies on its 0.49W power dissipation rating under 2oz copper thermal bias per JEDEC standards.

Key Specifications

Pinout & Package

SOT523 ultra-small surface-mount package (1.60 × 1.60 × 0.55 mm), molded green compound, matte tin–annealed terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2310UT-13, DMN2016LFG-7 offers lower conduction loss in space-tolerant designs, while AO3414 delivers higher current handling at the cost of gate drive overhead and reduced robustness-making DMN2310UT-13 optimal for ultra-compact, low-power, ESD-sensitive applications.

Availability

DMN2310UT-13 is available at Aetrix Electronics and suitable for USB load switching, portable DC-DC converter design, and IoT sensor node power gating requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN2310UT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and internal fabs.

The DMN2310UT belongs to Diodes' logic-level MOSFET product line, engineered specifically for space-constrained, battery-powered systems where low gate drive voltage, ultra-small footprint, and robust ESD performance are critical.

FAQ

Is DMN2310UT-13 suitable for 1.8V gate drive?

Yes. The device has a guaranteed gate threshold voltage range of 0.45–0.95V and delivers 100mA drain current at V_GS = 1.8V, enabling direct interface with 1.8V I/O microcontrollers without level shifters. R_DS(ON) is specified at 400mΩ under this condition.

What is the maximum safe operating junction temperature?

The absolute maximum junction temperature is +150°C, and the device is characterized for R_DS(ON) variation across this full range. Derating begins at T_J > 125°C, with normalized on-resistance rising to 1.6× typical at 150°C under V_GS = 4.5V.

Does DMN2310UT-13 have a built-in body diode?

Yes. It features an integrated parasitic body diode with forward voltage V_SD = 0.8–1.2V at 1A and reverse recovery time optimized for synchronous rectification. The diode supports bidirectional current flow in buck converter freewheeling paths.

Can DMN2310UT-13 replace older SOT-23 MOSFETs in existing layouts?

No. Its SOT523 footprint (1.60 × 1.60 mm) is physically smaller than SOT-23 (2.9 × 1.3 mm) and incompatible with standard SOT-23 land patterns. Pad layout must follow Diodes' recommended SOT523 dimensions (E1 = 0.80 mm, D = 1.60 mm) to ensure solder joint reliability.