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Diodes Incorporated DMN2310UT-7
- Part No.:
- DMN2310UT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-523
- Datasheet:
-
DMN2310UT-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT523 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:4,840
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Product details
Overview
DMN2310UT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V VDSS, 240mΩ RDS(ON) at VGS = 4.5V, and 1.2A continuous drain current at TA = +25°C. It serves as a low-voltage load switch or synchronous rectifier in compact DC-DC converters.
For engineers reviewing the DMN2310UT-7 datasheet, DMN2310UT-7 pinout, DMN2310UT-7 application, or DMN2310UT-7 equivalent, key selection criteria include its ultra-low RDS(ON) at 2.5V gate drive, ESD-protected gate, and thermal performance under 0.29W power dissipation on FR-4 PCB.
Technical Context
This MOSFET employs planar silicon process to achieve low threshold voltage (0.45–0.95V) and stable RDS(ON) across -55°C to 150°C junction temperature. Its 38pF input capacitance and 0.7nC total gate charge support fast switching with tD(ON) = 8ns and tF = 180ns under standard test conditions.
The device integrates a body diode with VSD = 0.8–1.2V at IS = 1A and exhibits normalized RDS(ON) variation ≤1.4× over full temperature range at VGS = 4.5V, enabling predictable conduction loss in thermally constrained designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum blocking voltage before avalanche; suitable for 12V rail and USB PD auxiliary power paths. |
| RDS(ON) | 240mΩ @ VGS = 4.5V - Enables <120mW conduction loss at 0.7A, critical for battery-powered load switching. |
| ID | 1.2A @ TA = +25°C - Continuous current rating defined with minimum pad layout; derates to 1.0A at +75°C ambient. |
| Qg | 0.7nC - Low gate charge reduces driver power and enables efficient operation with low-side gate drivers like TC7662. |
| Ciss | 38pF - Minimizes Miller effect and supports >1MHz switching in buck converter high-side applications. |
| TJ Range | -55°C to +150°C - Qualified for extended industrial and automotive under-hood environments when used within derated limits. |
Pinout & Package
Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.55 mm), moisture sensitivity level 1, matte tin–annealed terminals solderable per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; ESD-protected; requires ≤±8V drive; 0.45–0.95V threshold enables logic-level compatibility with 1.8V/2.5V/3.3V microcontrollers. |
| S | Source | Reference node for gate drive; connects to ground or low-side return path; body diode anode. |
| D | Drain | Power output terminal; connects to load or supply rail; body diode cathode; handles up to 4.2A pulsed current. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V | 300mΩ - Enables direct drive from 2.5V GPIOs without level-shifting, reducing BOM count in portable systems. |
| Ultra-small footprint | SOT523 - Saves >60% board area vs. SOT23; ideal for space-constrained wearables and IoT sensor nodes. |
| ESD-protected gate | HBM ≥2kV - Eliminates need for external gate protection in handling-sensitive assembly lines and field-replaceable modules. |
| Green compliance | Halogen-free, antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements for EU and China RoHS. |
Applications
| USB Power Delivery Switching | Wearable Device Load Control |
|---|---|
Use Scenario: Selectively enable/disable VBUS power to peripheral ports in USB-C multi-role devices. IC Role / Device Role / Timing Role: Low-side load switch controlling 5V/3A power path with <100ns turn-off to meet USB PD 3.1 fault response timing. Use Value: 240mΩ RDS(ON) limits voltage drop to <720mV at 3A, preserving bus regulation margin while minimizing thermal rise on 2-layer flex PCB. |
Use Scenario: Isolate battery from BLE SoC and display during deep-sleep mode in smart bands. IC Role / Device Role / Timing Role: High-efficiency power gate driven by 1.8V MCU GPIO; operates in linear region only during soft-start. Use Value: 300mΩ RDS(ON) at VGS = 2.5V ensures <300μA quiescent current in off-state and <15mW conduction loss at 200mA active load. |
| Industrial Sensor Node Power Management | Automotive Cabin Controller Auxiliary Switch |
Use Scenario: Enable 3.3V LDO supply to MEMS accelerometer and RF transceiver only during measurement cycles. IC Role / Device Role / Timing Role: Precision-controlled power gate with <1μA IDSS leakage to extend 10-year battery life in wireless condition monitoring nodes. Use Value: 1.0μA max IDSS at VDS = 20V and -40°C ensures <10nA system leakage contribution, meeting ISO 14572 Class A requirements. |
Use Scenario: Drive LED backlight and CAN transceiver bias rails in infotainment control panel with AEC-Q101-compliant variant (DMN2310UTQ). IC Role / Device Role / Timing Role: Robust load switch qualified for 1000-cycle thermal cycling and 1000hr HTRB stress per AEC-Q101 Rev D. Use Value: RDS(ON) shift <15% over -40°C to +125°C enables stable current limiting without recalibration across vehicle lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | 20V VDSS, 160mΩ RDS(ON) @ 4.5V, SOT-723 package (smaller than SOT523), higher Qg (1.1nC) | Higher current capability (1.6A) but larger gate drive demand; not pin-compatible due to different pinout (G-S-D vs G-D-S) | Select when lower RDS(ON) outweighs board area constraints and gate driver strength permits higher Qg. |
| AO3400 | 30V VDSS, 44mΩ RDS(ON) @ 10V, SOT-23 package, no ESD protection, higher leakage (IDSS = 1μA max) | Higher voltage rating and lower on-resistance, but requires 4.5–10V gate drive and external ESD protection in handheld designs | Choose for cost-sensitive 5V/12V industrial supplies where gate drive voltage ≥4.5V and ESD risk is mitigated externally. |
Compared with DMN2310UT-7, DMN2016LFG-7 offers lower RDS(ON) in a smaller package but demands more gate charge, while AO3400 provides superior conduction efficiency at higher voltages but lacks integrated ESD protection and logic-level drive capability.
Availability
DMN2310UT-7 is available at Aetrix Electronics and suitable for USB power delivery switching, wearable device load control, and industrial sensor node power management requiring stable component supply and traceable green sourcing.
Supply support for DMN2310UT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and internal fabs.
The DMN2310UT belongs to Diodes' "Logic-Level MOSFET" product line, engineered specifically for space-constrained, low-voltage power management in portable and battery-operated systems where gate drive voltage is limited to ≤2.5V.
FAQ
What is the maximum safe operating temperature for DMN2310UT-7?
The junction temperature must not exceed +150°C under any operating condition. With RθJA = 435°C/W on standard FR-4 and PD = 0.29W, the maximum allowable ambient temperature is +80°C at full 1.2A load. Derating curves in Figure 5 confirm usable current drops to 0.8A at +100°C ambient.
Can DMN2310UT-7 be used as a high-side switch?
No - it is an N-channel MOSFET with source tied to reference potential; high-side switching requires either a P-channel device or an N-channel with floating gate driver. Its SOT523 pinout (G-S-D) and lack of integrated charge pump preclude self-contained high-side operation.
Is the body diode suitable for reverse polarity protection?
Yes - the intrinsic body diode has VSD = 0.8–1.2V at 1A and supports 0.6A continuous forward current. When placed in series with the power rail (anode to input, cathode to load), it blocks reverse voltage up to 20V with minimal forward drop during normal operation.
Does DMN2310UT-7 require external gate resistor for stability?
A 10Ω gate resistor is recommended to dampen ringing caused by 1.42kΩ gate resistance interacting with PCB trace inductance and Ciss. Without it, measured tR = 138ns may increase overshoot beyond ±8V VGS rating during fast edge transitions in noisy environments.
DMN2310UT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 38 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 290mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DMN2310UT-7 FAQ
1.How can I place an order for DMN2310UT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2310UT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2310UT-7 reliable?
The price and inventory of DMN2310UT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2310UT-7 is usually 5 days.
3.What payment methods are accepted for DMN2310UT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2310UT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2310UT-7?
DMN2310UT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2310UT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2310UT-7?
For technical support, including DMN2310UT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2310UT-7 requirements.
6.How does Aetrix verify that DMN2310UT-7 is sourced from the original manufacturer or authorized distributors?
All DMN2310UT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2310UT-7 meets industry standards.
7.What is the process for return or replacement of DMN2310UT-7?
All DMN2310UT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2310UT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2310UT-7 part is unused and in its original packaging.
Return procedure for DMN2310UT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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