Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN2310UTQ-7

Part No.:
DMN2310UTQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-523
Datasheet:
AetrixDMN2310UTQ-7.pdf
Description:
MOSFET BVDSS: 8V~24V SOT523 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,182

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN2310UTQ-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V VDSS, 240mΩ RDS(on) at VGS = 4.5V and 1.2A continuous drain current at TA = +25°C. It serves as a low-voltage load switch or synchronous rectifier in space-constrained DC-DC converters.

For engineers reviewing the DMN2310UTQ-7 datasheet, DMN2310UTQ-7 pinout, DMN2310UTQ-7 application, or DMN2310UTQ-7 equivalent, key selection criteria include its ultra-small SOT523 footprint, 174mΩ typical RDS(on) at 4.5V, 38pF Ciss, ESD-protected gate, and AEC-Q101 qualification for automotive power management.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching (tR = 138ns, tF = 180ns) and low gate charge (Qg = 0.7nC). Its 0.002g mass and 1.6mm × 1.6mm SOT523 outline support high-density PCB layouts.

Designed for 1.8V–4.5V logic-level drive, it delivers 211mΩ RDS(on) at VGS = 2.5V and 263mΩ at VGS = 1.8V, enabling direct interface with low-voltage microcontrollers and PMICs without level-shifting circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - supports input rails up to 18V in USB PD, battery-powered, and automotive accessory circuits
RDS(on) @ VGS = 4.5V 240mΩ max - limits conduction loss to ≤0.35W at 1.2A, critical for thermally constrained SOT523 layout
Qg 0.7nC - enables efficient 1MHz+ switching in buck converters with minimal gate-drive power
Ciss 38pF - reduces Miller effect and improves noise immunity in high-dv/dt environments
TJ Range −55°C to +150°C - qualified per AEC-Q101 for under-hood automotive modules and industrial controllers
PD (FR-4, 2oz Cu) 0.49W - defines maximum steady-state power handling with thermal pad bias to inner copper layer

Pinout & Package

SOT523 is a 3-pin ultra-small surface-mount package (1.60mm × 1.60mm × 0.90mm), optimized for high-volume automated assembly and minimal board area consumption in portable electronics.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control electrode Accepts 1.8V–4.5V logic-level signals; ESD-protected to ±2kV HBM per JESD22-A114
Source (S) Reference node for gate drive and current return path Internally connected to die substrate; requires low-impedance PCB ground plane for thermal and switching stability
Drain (D) Power output terminal Carries switched load current; connects to output rail in high-side or low-side configurations

Key Features

Feature Design Value
Ultra-low RDS(on) at 2.5V drive 300mΩ max - enables use with 2.5V I/O domains in modern SoCs and MCUs without gate drivers
Low input capacitance Ciss = 38pF - minimizes gate-drive energy and improves switching efficiency in high-frequency DC-DC stages
Fast turn-off capability tD(off) = 154ns, tF = 180ns - reduces dead-time losses and supports synchronous rectification in buck converters
AEC-Q101 qualified Qualified for automotive applications including body control modules and infotainment power supplies
Green, halogen-free construction Meets IEC 61249-2-21 and JEDEC JS709C - supports RoHS 3 and automotive ELV compliance requirements

Applications

USB Power Delivery Switching Automotive Body Control Module

Use Scenario: Selective power routing to USB-C ports with overcurrent protection and hot-swap capability.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path; driven by PMIC GPIO with 2.5V logic compatibility.

Use Value: 240mΩ RDS(on) limits voltage drop to <300mV at 1.2A, preserving USB PD voltage regulation margin.

Use Scenario: Power gating of LED lighting, window lift motors, and sensor clusters in 12V vehicle systems.

IC Role / Device Role / Timing Role: High-reliability N-channel switch replacing mechanical relays; controlled via CAN-linked MCU PWM outputs.

Use Value: AEC-Q101 qualification ensures operation across −40°C to +125°C ambient, meeting ISO 16750-4 requirements.

Wearable Battery Management Industrial IoT Sensor Node

Use Scenario: Isolation of Li-ion battery during charging/discharging cycles to prevent backfeed and leakage.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between battery and system rail; activated only during active discharge.

Use Value: 1μA max IDSS at 20V ensures <1% monthly self-discharge-critical for multi-year wearable battery life.

Use Scenario: Power sequencing and domain isolation in edge-node gateways with multiple voltage rails (3.3V, 1.8V, 1.2V).

IC Role / Device Role / Timing Role: Standby-mode rail enable switch; controlled by real-time OS task scheduler via GPIO.

Use Value: 0.002g weight and 1.6mm² footprint allow integration into compact 10mm × 10mm sensor modules without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2016LFG-7 Lower RDS(on) (160mΩ @ 4.5V), same SOT523 package, but higher Qg (1.1nC) Better conduction loss, but slower switching and higher gate-drive demand Prefer when thermal budget dominates over switching frequency (e.g., <500kHz DC-DC)
AO3414 Higher RDS(on) (45mΩ @ 4.5V), larger SOT23 package, AEC-Q101 not claimed Higher current rating (4.2A), but unsuitable for space-constrained automotive designs Select only if board area allows SOT23 and AEC-Q101 compliance is not required

Compared with DMN2310UTQ-7, DMN2016LFG-7 trades faster switching for lower conduction loss, while AO3414 sacrifices miniaturization and automotive qualification for higher current capacity-making DMN2310UTQ-7 optimal for ultra-compact, AEC-Q101-compliant 1–1.2A load switching.

Availability

DMN2310UTQ-7 is available at Aetrix Electronics and suitable for USB Power Delivery switching, automotive body control modules, and wearable battery management requiring stable component supply across extended product lifecycles.

Supply support for DMN2310UTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The DMN2310UTQ-7 belongs to Diodes' Automotive-Qualified Logic-Level MOSFET product line, engineered specifically for low-voltage, high-density power switching in AEC-Q101-compliant automotive and portable electronics systems.

FAQ

What is the maximum continuous drain current for DMN2310UTQ-7 at +75°C ambient?

At TA = +75°C, the maximum continuous drain current is 1.0A with VGS = 4.5V, based on thermal derating from the 0.49W power dissipation limit on a 2oz FR-4 board with thermal bias. This reflects a 17% reduction from the +25°C rating of 1.2A due to junction-to-ambient thermal resistance (RθJA = 253°C/W).

Is DMN2310UTQ-7 suitable for reverse-polarity protection?

Yes-its body diode forward voltage is 0.8–1.2V at 1A, and its 20V VDSS rating supports standard 12V automotive and 5V USB systems. When used in high-side configuration with gate driven above source, it blocks reverse current while maintaining low forward drop, provided external gate control ensures proper turn-on timing.

Does DMN2310UTQ-7 require a gate resistor for ESD protection?

No-its gate is internally ESD-protected to ±2kV HBM per JESD22-A114, eliminating need for external series resistors in most applications. However, a 10Ω gate resistor is recommended in high-noise environments (e.g., motor drives) to dampen ringing and reduce dv/dt-induced false turn-on.

Can DMN2310UTQ-7 be used in parallel with identical units for higher current handling?

Not recommended-its positive temperature coefficient of RDS(on) (normalized to 1.4× at 150°C) provides limited inherent current sharing. Without matched gate drive and symmetrical PCB layout, imbalance exceeding 30% can occur. For >1.2A loads, select a single higher-rated device such as DMN2016LFG-7 instead.

DMN2310UTQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
240mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.7 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
38 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
290mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DMN2310UTQ-7 FAQ

1.How can I place an order for DMN2310UTQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2310UTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2310UTQ-7 reliable?

The price and inventory of DMN2310UTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2310UTQ-7 is usually 5 days.

3.What payment methods are accepted for DMN2310UTQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2310UTQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2310UTQ-7?

DMN2310UTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2310UTQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2310UTQ-7?

For technical support, including DMN2310UTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2310UTQ-7 requirements.

6.How does Aetrix verify that DMN2310UTQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN2310UTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2310UTQ-7 meets industry standards.

7.What is the process for return or replacement of DMN2310UTQ-7?

All DMN2310UTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2310UTQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2310UTQ-7 part is unused and in its original packaging.

Return procedure for DMN2310UTQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2310UTQ-7 Tags

  • DMN2310UTQ-7
  • DMN2310UTQ-7 PDF
  • DMN2310UTQ-7 Datasheet
  • DMN2310UTQ-7 Specifications
  • DMN2310UTQ-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN2310UTQ-7
  • Buy DMN2310UTQ-7
  • DMN2310UTQ-7 Price
  • DMN2310UTQ-7 Distributor
  • DMN2310UTQ-7 Supplier
  • DMN2310UTQ-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER