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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2310UWQ-13

Name: DMN2310UWQ-13
Brand: Diodes Incorporated
SKU: DMN2310UWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2310UWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: DMN2310UWQ-13.pdf

Description:: MOSFET BVDSS: 8V~24V SOT323 T&R

Quantity:: RFQ Add To RFQ list

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Inventory:3,275

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Product details

Overview

DMN2310UWQ-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in SOT323 package, rated for 1.3A continuous drain current at V_GS = 4.5V, with R_DS(ON) = 200 mΩ max and AEC-Q101 qualified for automotive use. It serves as a low-voltage power switch in DC-DC converters and analog switching circuits.

For engineers reviewing the DMN2310UWQ-13 datasheet, DMN2310UWQ-13 pinout, DMN2310UWQ-13 application, or DMN2310UWQ-13 equivalent, key selection criteria include its 200 mΩ on-resistance at 4.5V gate drive, 0.45 W power dissipation limit, 275 °C/W thermal resistance, and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage (V_GS(TH)) of 0.45–0.95 V, enabling logic-level drive compatibility with 1.8V/2.5V/4.5V microcontrollers. Its low input capacitance (C_iss = 38 pF) and fast switching times (t_D(ON) = 4.8 ns, t_F = 55 ns) support high-frequency power management.

The device integrates an intrinsic body diode with V_SD = 0.85–1.2 V at I_S = 1 A and is characterized for operation across –55°C to +150°C junction temperature range. Thermal performance is specified for FR-4 PCB mounting with defined pad layout per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - maximum blocking voltage before avalanche conduction
R_DS(ON) @ V_GS = 4.5V	200 mΩ max - ensures ≤260 mW conduction loss at 1.3A load
I_D Continuous	1.3 A @ T_A = +25°C - usable current level with standard FR-4 layout
C_iss	38 pF - reduces gate drive power and enables <10 ns turn-on delay
t_F	55 ns - supports >1 MHz switching in synchronous buck topologies
T_J Range	–55°C to +150°C - validated for under-hood automotive environments
Q_g	0.7 nC - enables efficient driving with low-power GPIO or gate drivers

Pinout & Package

Package: SOT323 - surface-mount plastic package with 3 terminals, 0.006 g mass, UL 94V-0 rating, and matte tin–annealed copper leadframe for reliable solderability.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–4.5 V logic-level signals; threshold voltage 0.45–0.95 V enables direct MCU interface
D (Drain)	High-side or low-side current path	Rated for 20 V blocking; connects to load or supply rail depending on topology
S (Source)	Reference node / return path	Internally tied to body diode cathode; used for Kelvin sensing or feedback in precision applications

Key Features

Feature	Design Value
Low R_DS(ON) at 2.5V drive	280 mΩ max - enables operation with 2.5V I/O rails without external level shifting
ESD protection	Integrated on-chip ESD structure - eliminates need for external TVS in most board-level ESD events
AEC-Q101 qualification	Validated for automotive change control - supports PPAP documentation and IATF 16949 manufacturing traceability
Green packaging	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets RoHS 3 and automotive environmental compliance

Applications

Automotive Body Control Module

USB Power Switching

Use Scenario: Controlling LED lighting and solenoid actuators in door modules and seat controls.

IC Role / Device Role / Timing Role: Low-side switching element driven by 3.3V microcontroller GPIO.

Use Value: 200 mΩ R_DS(ON) limits power loss to <340 mW at 1.3A, reducing thermal stress in confined enclosures.

Use Scenario: Enabling/disabling VBUS power paths in USB 2.0 peripheral hubs and docking stations.

IC Role / Device Role / Timing Role: High-speed load switch with <55 ns fall time to meet USB suspend/resume timing.

Use Value: 38 pF C_iss and 0.7 nC Q_g allow clean, low-jitter switching without gate driver ICs.

Portable DC-DC Converter

Analog Signal Routing

Use Scenario: Synchronous rectifier in 3.3V/5V step-down converters for wearables and IoT sensors.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 1–2 MHz PWM frequency.

Use Value: 55 ns t_F and 181 ns t_D(OFF) ensure minimal dead-time losses and high efficiency at light loads.

Use Scenario: Multiplexing audio or sensor signals in battery-powered medical devices.

IC Role / Device Role / Timing Role: Bidirectional analog switch with low on-resistance flatness (±10% over signal range).

Use Value: 150–200 mΩ R_DS(ON) variation across V_GS = 1.8–4.5V preserves signal integrity below 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(ON) = 160 mΩ @ 4.5V, SOT23 package, higher I_D = 2.0A	Larger footprint and higher current capability; not SOT323-compatible	Select when board space allows SOT23 and higher current (>1.3A) is required
AO3400A	R_DS(ON) = 40 mΩ @ 10V, but 300 mΩ @ 2.5V; no AEC-Q101 qualification	Higher gate voltage dependency; unsuitable for automotive PPAP programs	Choose only for cost-sensitive consumer applications without automotive compliance needs

Compared with DMN2310UWQ-13, DMN2016LFG-7 offers lower on-resistance in a larger package, while AO3400A trades automotive qualification and low-V_GS performance for raw R_DS(ON) at 10V - making DMN2310UWQ-13 uniquely balanced for space-constrained, AEC-Q101–required 2.5V–4.5V drive systems.

Availability

DMN2310UWQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, portable DC-DC converters, and USB power delivery systems requiring stable component supply and long-term lifecycle assurance.

Supply support for DMN2310UWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN2310UWQ belongs to Diodes' AEC-Q101–qualified small-signal MOSFET product line, engineered specifically for space-constrained, low-voltage automotive and portable power-switching applications where logic-level drive and thermal robustness are critical.

FAQ

Is DMN2310UWQ-13 suitable for 1.8V GPIO drive?

Yes. With V_GS(TH) as low as 0.45 V and R_DS(ON) = 380 mΩ max at V_GS = 1.8V, it fully turns on using 1.8V logic outputs. The device delivers 100 mA drain current under these conditions, confirmed in Figure 4 of the datasheet.

What is the maximum safe operating area (SOA) at 100°C case temperature?

At T_C = 100°C, the SOA curve (Figure 12) shows the device supports 1.3A continuous current up to V_DS ≈ 2.5V, or 0.6A at 10V, assuming single-pulse operation. Derating is required beyond 100°C due to R_DS(ON) increase and reduced PD.

Does DMN2310UWQ-13 include integrated ESD protection?

Yes. The datasheet states "ESD PROTECTED" in the Equivalent Circuit diagram (page 1), and the device passes HBM testing per AEC-Q101 requirements. No external ESD diode is needed for typical board-level IEC 61000-4-2 Level 2 events.

Can DMN2310UWQ-13 be used in high-frequency Class-D amplifier output stages?

No. While its 55 ns fall time supports >1 MHz switching, the R_DS(ON) of 200 mΩ causes excessive conduction loss at typical Class-D currents (>2A). Its 1.3A I_D rating and 0.45 W power limit make it unsuitable for audio output stage duty.

DMN2310UWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 300mA, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.7 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 38 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 450mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DMN2310UWQ-13 FAQ

1.How can I place an order for DMN2310UWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2310UWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2310UWQ-13 reliable?

The price and inventory of DMN2310UWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2310UWQ-13 is usually 5 days.

3.What payment methods are accepted for DMN2310UWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2310UWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2310UWQ-13?

DMN2310UWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2310UWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2310UWQ-13?

For technical support, including DMN2310UWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2310UWQ-13 requirements.

6.How does Aetrix verify that DMN2310UWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN2310UWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2310UWQ-13 meets industry standards.

7.What is the process for return or replacement of DMN2310UWQ-13?

All DMN2310UWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2310UWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2310UWQ-13 part is unused and in its original packaging.

Return procedure for DMN2310UWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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