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Diodes Incorporated DMN2320UFB4-7B
- Part No.:
- DMN2320UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2320UFB4-7B.pdf
- Description:
- MOSFET N-CH 20V 1A X2-DFN1006-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,925
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Product details
Overview
DMN2320UFB4-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET optimized for low-voltage load switching in space-constrained portable electronics. It delivers 320mΩ RDS(on) at VGS = 4.5V, supports 1.0A continuous drain current at +25°C, features 2kV ESD-protected gate, and uses X2-DFN1006-3 (1.0 × 0.6 mm) package - footprint just 0.6 mm².
For engineers reviewing the DMN2320UFB4-7B datasheet, DMN2320UFB4-7B pinout, DMN2320UFB4-7B application, or DMN2320UFB4-7B equivalent, key selection criteria include low gate threshold (0.5–0.95V), fast switching (tD(on) = 4.9 ns), thermal resistance (RθJA = 117 °C/W with copper pad), and compatibility with 1.8V/2.5V logic-level drive in battery-powered systems.
Technical Context
This MOSFET operates as a single N-channel load switch with integrated gate protection diode and ESD-hardened structure. Its low VGS(th) enables direct drive from 1.8V GPIOs, while RDS(on) remains stable across −55°C to +150°C ambient range - critical for wearable and IoT edge nodes.
The device employs trench-gate process technology to balance conduction loss and switching speed. With Ciss = 71 pF and Qg = 0.89 nC at VGS = 4.5V, it achieves efficient turn-on with minimal gate drive energy, supporting high-frequency PWM control up to several MHz in DC-DC post-regulation and power sequencing circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - maximum blocking voltage for 3.3V/5V rail switching without derating |
| RDS(on) | 320 mΩ @ VGS = 4.5V - ensures <160 mW conduction loss at 0.5A load |
| ID (max) | 1.0 A @ TA = +25°C - supports USB-powered peripherals and sensor modules |
| VGS(th) | 0.50–0.95 V - compatible with 1.8V logic and ultra-low-power microcontrollers |
| Qg | 0.89 nC - enables fast turn-on with <1 µs delay using standard GPIO drivers |
| RθJA | 117 °C/W (with 25 mm² copper pad) - allows 0.52 W dissipation at ≤85°C board temp |
| Ciss | 71 pF - minimizes capacitive loading on driving signal path |
Pinout & Package
Package: X2-DFN1006-3 (1.0 mm × 0.6 mm × 0.4 mm), leadless, bottom-side thermal pad, NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Power output node | Connected to load side of switched rail; thermally coupled to PCB copper for heat dissipation |
| Source (S) | Power return reference | Common ground reference for gate drive and load current return path |
| Gate (G) | Control input | High-impedance node requiring <0.89 nC charge for full enhancement; ESD-protected to 2 kV HBM |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.6 mm² area - saves >90% board space vs. SOT-23, enabling dense wearables and hearing aids |
| Low-profile height | 0.4 mm max - fits under thin display bezels and stacked FPC connectors |
| Logic-level gate drive | VGS(th) ≤ 0.95 V - eliminates need for level shifters when driven by ARM Cortex-M0+/nRF52 GPIOs |
| ESD-hardened gate | 2 kV HBM rating - reduces need for external TVS in handheld ESD-prone environments |
| Green construction | Halogen- and antimony-free, RoHS-compliant molding compound - meets IEC 61249-2-21 and JEDEC J-STD-020 |
Applications
| Smart Wearable Power Management | USB-C Port Power Switching |
|---|---|
Use Scenario: Enabling/disabling power to optical heart-rate sensor and accelerometer in fitness band during sleep mode. IC Role / Device Role / Timing Role: Load switch controlling 3.3V sensor rail; activated by MCU GPIO with <10 µs response. Use Value: Achieves sub-1 µA off-state leakage and <160 mW loss at 500 mA, extending battery life by >12% over SOT-23 alternatives. |
Use Scenario: Isolating VBUS from downstream Type-C receptacle during cable insertion/removal detection. IC Role / Device Role / Timing Role: Hot-swap controller for 5V/3A USB-C PD negotiation sequence. Use Value: Fast 4.9 ns turn-on delay ensures clean power ramp before CC line communication begins. |
| Bluetooth LE Audio Earbud Charging Circuit | Industrial Sensor Node Power Gating |
Use Scenario: Disconnecting charging IC from Li-ion cell during firmware update to prevent data corruption. IC Role / Device Role / Timing Role: Reverse-blocking load switch placed between charger output and battery terminal. Use Value: 1.2 V forward diode drop (VSD) limits reverse leakage to <1 µA, preserving firmware integrity. |
Use Scenario: Powering down MEMS pressure transducer and ADC during 10-second wake-sleep cycles in wireless telemetry node. IC Role / Device Role / Timing Role: Low-quiescent-load switch controlled by RTC alarm interrupt. Use Value: 0.5 µA typical IDSS ensures <0.1% battery drain during 30-day deployment without maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020UFB4-7 | RDS(on) = 200 mΩ @ VGS = 4.5V; higher ID (1.3A); same X2-DFN1006-3 package | Better for 1A+ loads where thermal margin is tight; requires same PCB layout | Select when lower conduction loss is prioritized over cost and gate drive simplicity |
| AO3400A | RDS(on) = 44 mΩ @ VGS = 10V but 650 mΩ @ VGS = 2.5V; SOT-23 package (3.0 × 1.4 mm) | Requires 3.3V+ gate drive; unsuitable for 1.8V logic; larger footprint increases board area | Choose only if existing SOT-23 layout must be reused and gate voltage ≥3.3V is guaranteed |
Compared with DMN2320UFB4-7B, DMN2020UFB4-7 offers lower RDS(on) at identical drive voltage and package, while AO3400A demands higher gate voltage and occupies 13× more board area - making DMN2320UFB4-7B optimal for compact 1.8V/2.5V-driven systems.
Availability
DMN2320UFB4-7B is available at Aetrix Electronics and suitable for smart wearables, USB-C accessory power management, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.
Supply support for DMN2320UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This MOSFET belongs to Diodes' X2-DFN ultra-miniature power switch family, engineered specifically for space- and power-constrained portable electronics where footprint, profile, and logic-level compatibility are primary constraints.
FAQ
What is the maximum continuous drain current at 85°C ambient?
At TA = +85°C, the DMN2320UFB4-7B supports 0.7 A continuous drain current per the datasheet's derating curve. This assumes use of the recommended 25 mm² copper pad for thermal management. Operation above this current requires verification of junction temperature using RθJA = 117 °C/W and power dissipation calculations.
Does this MOSFET require a gate resistor for stability?
No external gate resistor is required for basic on/off switching due to its low Qg (0.89 nC) and Rg (69 Ω). However, a 10–47 Ω series resistor is recommended when driving from high-speed MCU pins to damp ringing caused by PCB trace inductance and minimize EMI in sensitive RF environments.
Can DMN2320UFB4-7B be used in reverse-biased (source-to-drain) configurations?
Yes - the body diode has VSD = 0.7–1.2 V at IS = 300 mA and supports bidirectional current flow. However, reverse conduction is not rated for continuous operation beyond 300 mA, and thermal performance must be validated separately when used in reverse-battery protection or OR-ing applications.
Is the X2-DFN1006-3 package compatible with standard reflow profiles?
Yes - the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 10–30 sec above 217°C). The NiPdAu finish ensures reliable solder wetting, and the 0.35 mm pitch allows compatibility with 6 mil stencil apertures and fine-pitch placement equipment.
DMN2320UFB4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.89 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 71 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2320UFB4-7B FAQ
1.How can I place an order for DMN2320UFB4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2320UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2320UFB4-7B reliable?
The price and inventory of DMN2320UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2320UFB4-7B is usually 5 days.
3.What payment methods are accepted for DMN2320UFB4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2320UFB4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2320UFB4-7B?
DMN2320UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2320UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2320UFB4-7B?
For technical support, including DMN2320UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2320UFB4-7B requirements.
6.How does Aetrix verify that DMN2320UFB4-7B is sourced from the original manufacturer or authorized distributors?
All DMN2320UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2320UFB4-7B meets industry standards.
7.What is the process for return or replacement of DMN2320UFB4-7B?
All DMN2320UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2320UFB4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2320UFB4-7B part is unused and in its original packaging.
Return procedure for DMN2320UFB4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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