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Diodes Incorporated DMN2400UFB4-7B
- Part No.:
- DMN2400UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2400UFB4-7B.pdf
- Description:
- MOSFET N-CH X2-DFN1006-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,711
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Product details
Overview
DMN2400UFB4-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in an ultra-small X2-DFN1006-3 package (1.0 × 0.6 mm, 0.4 mm max height), featuring RDS(ON) = 0.55 Ω @ VGS = 4.5 V, VGS(TH) = 0.5–0.9 V, and ESD protection to 1.5 kV. It serves as a low-voltage load switch or signal switch in space-constrained portable electronics.
For engineers reviewing the DMN2400UFB4-7B datasheet, DMN2400UFB4-7B pinout, DMN2400UFB4-7B application, or DMN2400UFB4-7B equivalent, key selection criteria include its ultra-low profile, gate threshold compatibility with 1.8 V/2.5 V logic, sub-1 Ω on-resistance at low VGS, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET operates in enhancement mode with a single N-channel structure optimized for low-voltage switching. Its gate threshold voltage range (0.5–0.9 V) ensures reliable turn-on with 1.8 V I/O, while the low input capacitance (Ciss = 36 pF) and fast switching times (tD(ON) = 4.11 ns, tF = 9.6 ns) support high-frequency operation in DC-DC converter control and LED driver circuits.
The device uses a thermally efficient DFN package with NiPdAu-plated terminals and is rated for continuous operation from –55 °C to +150 °C. Its RDS(ON) increases only 1.4× from 25 °C to 125 °C, enabling stable performance in thermally demanding environments without active cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports rail voltages up to 18 V with 10% margin for transients |
| RDS(ON) @ 4.5 V | 0.55 Ω - enables ≤300 mW conduction loss at 750 mA continuous drain current |
| VGS(TH) | 0.5–0.9 V - ensures full enhancement with 1.8 V microcontroller GPIO |
| Ciss | 36 pF - reduces gate drive power and improves switching efficiency above 1 MHz |
| TJ Range | –55 to +150 °C - qualified for under-hood automotive and industrial ambient conditions |
| ESD Rating | 1.5 kV HBM - protects against handling damage during SMT assembly and board-level integration |
| PD (FR-4) | 0.47 W - delivers 750 mA at 25 °C ambient with standard PCB layout |
Pinout & Package
X2-DFN1006-3 is a 3-terminal, bottom-exposed thermal pad package measuring 1.0 mm × 0.6 mm × 0.4 mm max. The drain connects to the exposed pad for enhanced thermal dissipation; gate and source are top-side terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Connected to exposed copper pad for low-thermal-resistance heat transfer to PCB ground plane |
| Source (S) | Reference node for gate control and current return | Internally tied to substrate; must be routed to system ground or low-impedance return path |
| Gate (G) | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage; sensitive to ESD but protected to 1.5 kV HBM |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low package height (0.4 mm max) | Enables use in <1.0 mm total board thickness designs such as wearables and slim IoT sensors |
| AEC-Q101 qualified | Validated for automotive applications including body control modules and infotainment power rails |
| RDS(ON) = 0.75 Ω @ VGS = 2.5 V | Supports direct interface with 2.5 V logic without level-shifting circuitry |
| Low Coss (5.7 pF) | Minimizes switching losses and improves efficiency in high-frequency synchronous rectifiers |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Tier 1 reporting requirements and EU RoHS 3 (2015/863/EU) |
Applications
| Smartphone Power Management | Automotive Cabin Sensors |
|---|---|
Use Scenario: Load switching for camera module power rail in space-limited smartphone mainboard. IC Role / Device Role / Timing Role: N-channel MOSFET used as high-side load switch controlled by AP GPIO. Use Value: 0.55 Ω RDS(ON) limits voltage drop to <415 mV at 750 mA, preserving headroom for 2.8 V camera supply. | Use Scenario: Power gating for MEMS accelerometer in automotive door module. IC Role / Device Role / Timing Role: Low-threshold MOSFET enabling wake-up from 1.8 V microcontroller sleep mode. Use Value: VGS(TH) ≤ 0.9 V ensures robust turn-on with 1.8 V I/O, eliminating need for external level shifter. |
| USB-C Port Protection | Industrial Sensor Node |
Use Scenario: Reverse-current blocking in USB-C power delivery path for portable accessories. IC Role / Device Role / Timing Role: N-channel MOSFET configured as ideal diode with gate driven by dedicated controller. Use Value: Ciss = 36 pF and fast tF = 9.6 ns allow clean turn-off during hot-plug events without bus glitching. | Use Scenario: Battery-disconnect switch in battery-powered wireless temperature sensor. IC Role / Device Role / Timing Role: Low-leakage switch isolating sensor subsystem during deep-sleep mode. Use Value: IDSS ≤ 100 nA at 20 V ensures <2 μA standby current, extending 10-year battery life target. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2450UFB4 | RDS(ON) = 0.45 Ω @ 4.5 V (20% lower); same package and VGS(TH) range | Higher current capability (ID = 0.9 A vs. 0.75 A) with identical footprint | Select when ≥0.9 A continuous current or <0.45 Ω RDS(ON) is required; note DMN2400UFB4 is preferred for cost-sensitive volume production |
| AO3400 | RDS(ON) = 0.042 Ω @ 10 V (not specified at 1.8 V); VGS(TH) = 0.7–1.4 V; larger SOT-23 package | Higher drive voltage requirement and 2.9 mm × 1.3 mm footprint limits ultra-compact layouts | Choose only if higher current (>2 A) and higher VGS (≥3.3 V) are acceptable; not suitable for 1.8 V logic or sub-1 mm height constraints |
Compared with DMN2450UFB4 and AO3400, DMN2400UFB4 offers optimal balance of ultra-small size, 1.8 V logic compatibility, and AEC-Q101 qualification-making it uniquely suited for next-generation wearable and automotive cabin electronics where board area and thermal profile are critical.
Availability
DMN2400UFB4-7B is available at Aetrix Electronics and suitable for smartphone power management, automotive cabin sensors, and USB-C port protection requiring stable component supply across high-mix, low-volume production runs.
Supply support for DMN2400UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained, low-voltage switching applications in portable and automotive electronics where minimal height and logic-level compatibility are mandatory.
FAQ
Is DMN2400UFB4-7B pin-compatible with DMN2450UFB4?
Yes-both devices share identical X2-DFN1006-3 packaging, pin configuration (D-S-G), and terminal layout. They are drop-in replacements in existing PCB designs, differing only in RDS(ON) and continuous current rating. No layout change is required when upgrading to DMN2450UFB4 for higher current capability.
What is the maximum recommended PCB pad size for thermal performance?
The datasheet specifies a minimum recommended pad layout for FR-4 boards: 0.70 mm × 0.70 mm exposed drain pad with two 0.25 mm thermal vias to inner ground layers. Increasing pad area beyond 1.0 mm × 1.0 mm yields diminishing returns; thermal resistance drops from 258 °C/W to ~220 °C/W with optimized copper fill.
Does DMN2400UFB4-7B support reverse-battery protection?
No-it is a unidirectional N-channel MOSFET and lacks intrinsic body-diode orientation for reverse-polarity protection. When used in high-side configuration, it blocks reverse current only when gate is actively driven; for true reverse-battery protection, a P-channel device or back-to-back N-channel arrangement is required.
Can DMN2400UFB4-7B operate reliably at 150 °C junction temperature?
Yes-the device is rated for TJ = –55 to +150 °C and characterized for RDS(ON) stability up to that limit. At 150 °C, RDS(ON) rises to ~1.4× its 25 °C value (≤0.77 Ω), remaining within specification. Derating to 550 mA continuous current is advised to maintain safe thermal margin on standard FR-4.
DMN2400UFB4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 470mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2400UFB4-7B FAQ
1.How can I place an order for DMN2400UFB4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2400UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2400UFB4-7B reliable?
The price and inventory of DMN2400UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2400UFB4-7B is usually 5 days.
3.What payment methods are accepted for DMN2400UFB4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2400UFB4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2400UFB4-7B?
DMN2400UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2400UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2400UFB4-7B?
For technical support, including DMN2400UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2400UFB4-7B requirements.
6.How does Aetrix verify that DMN2400UFB4-7B is sourced from the original manufacturer or authorized distributors?
All DMN2400UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2400UFB4-7B meets industry standards.
7.What is the process for return or replacement of DMN2400UFB4-7B?
All DMN2400UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2400UFB4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2400UFB4-7B part is unused and in its original packaging.
Return procedure for DMN2400UFB4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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