Diodes Incorporated DMN2400UFB4-7R
- Part No.:
- DMN2400UFB4-7R
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2400UFB4-7R.pdf
- Description:
- MOSFET N-CH X2-DFN1006-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,123
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Product details
Overview
DMN2400UFB4-7R from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in an ultra-small X2-DFN1006-3 package (1.0 × 0.6 mm, 0.4 mm max height), featuring RDS(ON) = 0.55 Ω @ VGS = 4.5V, VGS(TH) = 0.5–0.9 V, and ESD protection to 1.5 kV. It delivers low-input capacitance (Ciss = 36 pF) and fast switching (tD(ON) = 4.11 ns) for compact load-switching and power management in space-constrained portable electronics.
For engineers reviewing the DMN2400UFB4-7R datasheet, DMN2400UFB4-7R pinout, DMN2400UFB4-7R application, or DMN2400UFB4-7R equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low profile for thin-profile PCBs, gate threshold compatibility with 1.8V/2.5V logic, and thermal resistance of 258 °C/W on FR-4.
Technical Context
This MOSFET operates as a single N-channel enhancement-mode switch with integrated gate protection diode and body diode (VSD = 0.7–1.2 V @ IS = 150 mA). Its low VGS(TH) enables direct drive from low-voltage microcontrollers, while Ciss/Coss/Crss values support high-frequency PWM control up to several MHz.
The device uses a copper leadframe with NiPdAu plating and green molding compound (UL 94V-0), rated for -55°C to +150°C operation. Its 0.001 g weight and Level 1 moisture sensitivity reflect optimized manufacturability for high-speed SMT assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports input rails up to 18 V with 10% margin for transient spikes |
| RDS(ON) | 0.55 Ω @ VGS = 4.5V - limits conduction loss to ≤198 mW at 600 mA continuous drain current |
| VGS(TH) | 0.5–0.9 V - ensures reliable turn-on with 1.8 V GPIO or battery-backed logic |
| Ciss | 36 pF - reduces gate drive power and enables <5 ns turn-on delay with 10 Ω source impedance |
| Qg | 0.5 nC - allows full switching with <1 μJ gate energy, suitable for low-power MCU-driven loads |
| RθJA | 258 °C/W - requires minimal copper area (per Diodes' recommended pad layout) to sustain 0.47 W dissipation at +25°C ambient |
| ESD Rating | 1.5 kV HBM - protects against handling-induced discharge without external TVS in non-critical paths |
Pinout & Package
Package: X2-DFN1006-3 (1.0 mm × 0.6 mm × 0.4 mm max), bottom-exposed drain pad, no leads, RoHS-compliant green mold compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current path output | Exposed copper pad on bottom - must be soldered to large PCB copper pour for thermal and current conduction |
| Pin 2 (Source) | Reference node for channel | Connected to ground or low-side return; forms Kelvin sense path when used with external shunt |
| Pin 3 (Gate) | Control terminal | High-impedance input requiring <0.1 nC charge to switch; sensitive to ESD but protected to 1.5 kV HBM |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.0 mm × 0.6 mm area - saves >60% board space vs. SOT-23, enabling dense wearable PCB layouts |
| Low gate threshold voltage | VGS(TH) down to 0.5 V - eliminates need for level shifters when driven by 1.8 V microcontrollers |
| Low input/output leakage | IDSS ≤ 100 nA @ VDS = 20 V - preserves battery life in always-on sensor nodes during sleep mode |
| AEC-Q101 qualified | Stress-tested for automotive-grade reliability - supports industrial temperature range (-55°C to +150°C) without derating |
| 0.4 mm max profile | Enables stacking under displays or batteries - critical for sub-4 mm total thickness mobile accessories |
Applications
| Battery Protection Circuit | USB-C Port Power Switch |
|---|---|
Use Scenario: Isolating Li-ion cell from charging circuit during overvoltage or thermal fault. IC Role / Device Role / Timing Role: Low-side N-channel switch controlled by protection IC's fault signal. Use Value: 0.55 Ω RDS(ON) limits voltage drop to <330 mV at 600 mA, preserving battery capacity measurement accuracy. | Use Scenario: Enabling/disabling VBUS power delivery in portable USB-C accessories. IC Role / Device Role / Timing Role: Load switch between upstream port and downstream device, controlled by USB PD controller GPIO. Use Value: 4.11 ns turn-on delay ensures <10 μs response to PD policy engine commands, meeting USB-C specification timing budgets. |
| Wearable Sensor Node Power Gating | Low-Power IoT Edge Controller |
Use Scenario: Cutting power to BLE radio or environmental sensors during deep-sleep cycles. IC Role / Device Role / Timing Role: High-efficiency power gate placed between LDO output and sensor supply rail. Use Value: 100 nA IDSS leakage prevents >0.1 μA parasitic drain, extending 200 mAh coin-cell runtime by >12 months in 99% sleep duty cycle. | Use Scenario: Managing auxiliary power domains (e.g., secure element, RTC backup) in industrial edge gateways. IC Role / Device Role / Timing Role: Logic-level-controlled power switch sequenced by ARM Cortex-M4 firmware. Use Value: 0.9 Ω RDS(ON) @ VGS = 1.8 V ensures stable 3.3 V rail regulation even when MCU GPIO operates at minimum core voltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2450UFB4 | RDS(ON) = 0.45 Ω @ 4.5 V, higher Qg (0.6 nC), same package | Lower conduction loss but higher gate drive demand; not recommended for new designs per Diodes notice | Select only for legacy redesign where lower RDS(ON) justifies increased gate energy and obsolescence risk |
| AO3400 | RDS(ON) = 0.042 Ω @ 10 V, larger SOT-23 package, no AEC-Q101 rating | Higher drive voltage requirement (≥4.5 V), unsuitable for 1.8 V logic; lacks automotive qualification | Prefer only in cost-sensitive consumer applications where space and qualification are secondary |
Compared with DMN2450UFB4 and AO3400, DMN2400UFB4-7R uniquely balances ultra-low profile, 1.8 V logic compatibility, and AEC-Q101 reliability-making it optimal for next-gen wearables and space-constrained industrial controllers where gate drive efficiency and thermal footprint are co-critical.
Availability
DMN2400UFB4-7R is available at Aetrix Electronics and suitable for battery protection circuits, USB-C port power switches, wearable sensor node power gating, and low-power IoT edge controllers requiring stable component supply across extended product lifecycles.
Supply support for DMN2400UFB4-7R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.
This device belongs to Diodes' Ultra-Small Signal MOSFET product line, engineered specifically for space- and power-constrained portable electronics requiring AEC-Q101 reliability in sub-1 mm² footprints.
FAQ
What is the maximum continuous drain current for DMN2400UFB4-7R at 85°C ambient?
The datasheet specifies 0.55 A continuous drain current at TA = +85°C with device mounted on FR-4 PCB using minimum recommended pad layout. This reflects thermal derating due to RθJA = 258 °C/W; actual current capability increases with enhanced copper area or forced airflow.
Does DMN2400UFB4-7R require a gate resistor for stability?
A series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by trace inductance interacting with Ciss and Crss. The 4.11 ns tD(ON) and 9.6 ns tF indicate high dV/dt sensitivity; omitting the resistor may cause shoot-through in half-bridge configurations or EMI in noise-sensitive systems.
Can DMN2400UFB4-7R be used in linear (analog) mode?
No-it is characterized and qualified only for switching operation. The SOA curve is not provided, and RDS(ON) variation with temperature (±20% from -55°C to +150°C) makes precise analog gain control unreliable. Use dedicated analog switches or JFETs for linear applications.
Is the exposed drain pad electrically isolated from other terminals?
No-the exposed bottom pad is internally connected to the Drain terminal (Pin 1). It must be soldered to a PCB copper pour tied to the drain net for both thermal performance and electrical continuity; floating or grounding the pad will cause catastrophic failure.
DMN2400UFB4-7R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 470mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2400UFB4-7R FAQ
1.How can I place an order for DMN2400UFB4-7R through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2400UFB4-7R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2400UFB4-7R reliable?
The price and inventory of DMN2400UFB4-7R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2400UFB4-7R is usually 5 days.
3.What payment methods are accepted for DMN2400UFB4-7R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2400UFB4-7R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2400UFB4-7R?
DMN2400UFB4-7R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2400UFB4-7R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2400UFB4-7R?
For technical support, including DMN2400UFB4-7R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2400UFB4-7R requirements.
6.How does Aetrix verify that DMN2400UFB4-7R is sourced from the original manufacturer or authorized distributors?
All DMN2400UFB4-7R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2400UFB4-7R meets industry standards.
7.What is the process for return or replacement of DMN2400UFB4-7R?
All DMN2400UFB4-7R units undergo pre-shipment inspection (PSI). If there is an issue with DMN2400UFB4-7R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2400UFB4-7R part is unused and in its original packaging.
Return procedure for DMN2400UFB4-7R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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