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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2400UFD-7

Name: DMN2400UFD-7
Brand: Diodes Incorporated
SKU: DMN2400UFD-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2400UFD-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 3-UDFN

Datasheet:: DMN2400UFD-7.pdf

Description:: MOSFET N-CH 20V 900MA 3DFN

Quantity:: RFQ Add To RFQ list

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Inventory:7,649

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Product details

Overview

DMN2400UFD from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET with ultra-low gate threshold voltage (≤1.0V), optimized for load switching in space-constrained, low-voltage battery-powered systems. It delivers R_DS(ON) of 0.6Ω at V_GS = 4.5V and 0.8Ω at V_GS = 2.5V, supports 0.9A continuous drain current at +25°C, and integrates ESD-protected gate and low input capacitance (37pF) for robust, fast-switching operation.

For engineers reviewing the DMN2400UFD datasheet, DMN2400UFD pinout, DMN2400UFD application, or DMN2400UFD equivalent, key selection criteria include its 1.0V max V_GS(TH), 0.4W power dissipation on FR-4, X1-DFN1212-3 package footprint, and AEC-Q101 qualification for automotive-grade reliability in low-power control paths.

Technical Context

This MOSFET employs a planar silicon process to achieve sub-1V gate threshold while maintaining stable R_DS(ON) across temperature (±15% variation from −55°C to +125°C). Its low C_iss (37pF) and fast switching (t_D(ON) = 4.06ns, t_F = 10.54ns) enable high-efficiency operation in DC-DC converter synchronous rectification and always-on power rails.

The integrated body diode has V_SD = 0.7–1.2V at I_S = 500mA and supports bidirectional current flow in reverse-polarity protection circuits. Thermal resistance R_θJA is 280°C/W (FR-4, minimal pad) and 140°C/W (with thermal vias), confirming suitability for thermally isolated PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V - Maximum blocking voltage for 3.3V/5V logic-level systems
R_DS(ON)	0.6Ω @ V_GS = 4.5V - Enables ≤540mW conduction loss at 0.9A
V_GS(TH)	≤1.0V - Ensures full enhancement with single-cell Li-ion (2.5–4.2V) or coin-cell sources
I_D (max)	0.9A @ T_A = +25°C - Sufficient for USB peripheral power switches and sensor biasing
C_iss	37pF - Minimizes gate drive energy and enables >1MHz switching without excessive losses
P_D	0.4W (FR-4, min pad) - Defines maximum steady-state power in compact layouts
ESD Rating	HBM ±2kV - Confirmed gate protection eliminates need for external TVS in most portable designs

Pinout & Package

Package: X1-DFN1212-3 - 1.2mm × 1.2mm, 0.5mm height, 3-terminal leadless plastic package with NiPdAu-plated copper leadframe; UL 94V-0 rated, MSL Level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to exposed thermal pad; must be soldered to PCB ground plane for thermal management
2 (Gate)	Control electrode for channel modulation	ESD-protected input requiring <100nC total gate charge for full turn-on at 4.5V
3 (Drain)	Main current-carrying terminal under bias	High-side or low-side switch node; connects to load or supply rail depending on topology

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(TH) ≤ 1.0V ensures reliable turn-on from weak or aging batteries down to 1.5V
Low R_DS(ON) at low V_GS	0.8Ω @ 2.5V enables efficient operation in 2.5V–3.3V microcontroller GPIO-driven switches
Integrated ESD protection	HBM ±2kV rating eliminates discrete gate protection components in handheld device BOMs
Thermally enhanced DFN	R_θJC = 112°C/W allows direct heat transfer to PCB copper, supporting 0.8W derated power with vias

Applications

Battery-Powered Load Switch

Reverse Polarity Protection

Use Scenario: Enabling/disabling power to Bluetooth LE sensors or NFC tags powered by CR2032 coin cells.

IC Role / Device Role / Timing Role: Low-side load switch controlled directly by MCU GPIO with no level shifter required.

Use Value: Sub-1V V_GS(TH) guarantees turn-on even as battery drops to 2.0V; 0.6Ω R_DS(ON) limits dropout to <1.2mV at 2mA sleep current.

Use Scenario: Protecting USB-C peripherals from accidental reverse connection during hot-plug events.

IC Role / Device Role / Timing Role: High-side ideal diode replacement using source-follower configuration with body diode forward conduction.

Use Value: V_SD = 0.7V at 500mA reduces forward drop by 40% vs. Schottky diodes, improving efficiency in 5V bus protection.

Automotive Body Control Module

IoT Edge Node Power Sequencing

Use Scenario: Controlling LED status indicators and small solenoids in AEC-Q101-compliant vehicle interior modules.

IC Role / Device Role / Timing Role: AEC-Q101-qualified N-channel switch driving 12V loads via logic-level gate drive from CAN transceiver I/O.

Use Value: Qualified operation from −40°C to +125°C ambient; R_DS(ON) drift <15% over full range ensures stable current limiting.

Use Scenario: Sequencing power to RF transceivers, sensors, and microcontrollers in LPWAN edge nodes.

IC Role / Device Role / Timing Role: Precision-controlled power rail enable with fast turn-on (<15ns) and minimal gate drive demand.

Use Value: Q_g = 0.5nC enables clean, jitter-free sequencing using 10kΩ pull-up resistors and standard GPIO slew rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-threshold N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2450UFD	R_DS(ON) = 0.45Ω @ V_GS = 4.5V; higher ID (1.2A); same package and V_GS(TH)	Better suited for 1A+ loads where lower conduction loss justifies cost premium	Select when ≥15% lower R_DS(ON) is needed and layout accommodates identical footprint
AO3400	V_GS(TH) = 0.7–1.4V (wider spread); R_DS(ON) = 0.55Ω @ 4.5V; non-AEC-Q101	Lacks automotive qualification and guaranteed 1.0V max V_GS(TH); higher gate charge (1.4nC)	Acceptable for commercial-grade consumer devices where AEC-Q101 and tight V_GS(TH) tolerance are not required

Compared with DMN2400UFD, DMN2450UFD offers lower on-resistance for higher-current loads, while AO3400 trades guaranteed low-threshold performance and automotive qualification for broader availability and lower unit cost in non-automotive designs.

Availability

DMN2400UFD is available at Aetrix Electronics and suitable for battery-powered load switching, reverse polarity protection, automotive body control modules, and IoT edge node power sequencing requiring stable component supply and long-term lifecycle support.

Supply support for DMN2400UFD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMN2400UFD belongs to Diodes' "UFD" ultra-low-threshold MOSFET product line, engineered specifically for direct GPIO control in energy-sensitive, space-constrained applications where traditional logic-level MOSFETs fail to fully enhance.

FAQ

Is DMN2400UFD suitable for high-side switching configurations?

Yes - DMN2400UFD can be used in high-side configurations when driven by a gate voltage exceeding the source potential by ≥2.5V. Its low V_GS(TH) and 12V V_GSS rating allow bootstrap or charge-pump gate drivers to achieve full enhancement in 5V or 12V systems without risk of gate oxide damage.

What is the maximum operating junction temperature for DMN2400UFD?

The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across −55°C to +150°C. Derating begins at +70°C ambient for the 0.9A rating, with R_DS(ON) increasing linearly to 1.2× nominal at +125°C junction temperature per datasheet Fig. 5.

Does DMN2400UFD require external gate resistors for EMI suppression?

No external gate resistor is required for basic switching, but a 10–47Ω series resistor is recommended to dampen ringing caused by trace inductance and gate-drain capacitance (Crss = 4.2pF). This improves EMI performance in noise-sensitive RF or audio subsystems without compromising t_R (7.28ns) or t_F (10.54ns).

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.7–1.2V at 500mA and reverse recovery time <30ns, outperforming most 0402/0603 Schottky diodes in forward voltage at low currents (<100mA) but exhibiting higher leakage above 100°C. It eliminates board space and assembly cost, making it optimal for compact reverse-polarity or OR-ing applications where moderate leakage is acceptable.

DMN2400UFD-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 3-UDFN

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 500 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 37 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 400mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X1-DFN1212-3

DMN2400UFD-7 FAQ

1.How can I place an order for DMN2400UFD-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2400UFD-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2400UFD-7 reliable?

The price and inventory of DMN2400UFD-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2400UFD-7 is usually 5 days.

3.What payment methods are accepted for DMN2400UFD-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2400UFD-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2400UFD-7?

DMN2400UFD-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2400UFD-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2400UFD-7?

For technical support, including DMN2400UFD-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2400UFD-7 requirements.

6.How does Aetrix verify that DMN2400UFD-7 is sourced from the original manufacturer or authorized distributors?

All DMN2400UFD-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2400UFD-7 meets industry standards.

7.What is the process for return or replacement of DMN2400UFD-7?

All DMN2400UFD-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2400UFD-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2400UFD-7 part is unused and in its original packaging.

Return procedure for DMN2400UFD-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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