Diodes Incorporated DMN2451UFB4-7B

Overview

DMN2451UFB4-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage load switching in space-constrained portable electronics. It delivers 0.4 Ω R_DS(ON) at V_GS = 4.5 V, supports 1.3 A continuous drain current at +25°C, features a 0.4 mm profile in X2-DFN1006-3 package, and integrates ESD-protected gate for robust handling in automated assembly - used in USB power delivery paths and battery protection circuits.

For engineers reviewing the DMN2451UFB4-7B datasheet, DMN2451UFB4-7B pinout, DMN2451UFB4-7B application, or DMN2451UFB4-7B equivalent, key selection criteria include gate threshold voltage (0.5–1.0 V), thermal resistance (189 °C/W on FR-4), low-profile DFN footprint (0.6 mm²), and guaranteed R_DS(ON) performance down to 1.8 V gate drive for single-cell Li-ion systems.

Technical Context

This MOSFET operates as a single-N-channel load switch with integrated gate protection diode and ESD-hardened structure. Its low 0.5 V minimum gate threshold enables reliable turn-on from 1.8 V logic rails, while its 3.4 nC total gate charge (at V_GS = 4.5 V) ensures fast switching with minimal driver burden.

The device uses a silicon die in a thermally enhanced X2-DFN1006-3 package with NiPdAu-plated terminals and UL 94V-0 molding compound. Junction-to-ambient thermal resistance is specified at 189 °C/W (minimum pad layout) and 113 °C/W (with 25 mm² copper pour), supporting operation up to +150°C junction temperature.

Key Specifications

Pinout & Package

Package: X2-DFN1006-3 - 0.4 mm height, 1.0 × 0.6 mm body, 3-terminal leadless plastic package with exposed drain pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with DMN2041UFB4-7B and AO3400A, DMN2451UFB4-7B uniquely balances ultra-low gate threshold, sub-1 Ω R_DS(ON) at 1.8 V, and 0.6 mm² footprint - making it the only option that eliminates level shifters *and* saves board space in single-cell Li-ion designs.

Availability

DMN2451UFB4-7B is available at Aetrix Electronics and suitable for USB power delivery, battery protection, always-on sensor nodes, and low-power display backlighting requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN2451UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This part belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space- and power-constrained portable electronics where gate drive voltage headroom is limited to ≤2.5 V.

FAQ

Is DMN2451UFB4-7B qualified for automotive applications?

No - DMN2451UFB4-7B is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN2451UFB4Q-7B) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. This version is intended for commercial and industrial portable electronics only.

What is the maximum allowable pulsed drain current?

The pulsed drain current (I_DM) is rated at 3 A for 10 µs pulses with 1% duty cycle. This value assumes junction temperature remains within limits; actual capability depends on PCB copper area, ambient temperature, and pulse repetition rate - refer to Figure 12 (SOA curve) for time-dependent derating.

Does the X2-DFN1006-3 package require solder paste stencil adjustments?

Yes - the 0.15 mm G1 pad width and 0.075 mm G2 spacing demand a 0.1 mm thick stencil with 0.12 mm aperture reduction (to 0.03 mm land width) to prevent bridging. Diodes recommends using Type 4 or Type 5 solder paste and verifying reflow profile with peak temperatures ≤260°C for lead-free process compatibility.

Can DMN2451UFB4-7B be used in reverse conduction mode (source-to-drain)?

Yes - the integrated body diode supports source-to-drain conduction with V_SD = 0.7–1.2 V at 150 mA. However, its forward voltage is higher than discrete Schottky diodes, so it should only be used for bidirectional current paths where low leakage (<100 nA) and compact size outweigh forward voltage penalty.