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Diodes Incorporated DMN2451UFDQ-13
- Part No.:
- DMN2451UFDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-PowerUDFN
- Datasheet:
-
DMN2451UFDQ-13.pdf
- Description:
- MOSFET N-CH 20V 900MA 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,100
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Product details
Overview
DMN2451UFDQ from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN1212-3 (Type C) package, featuring 0.6Ω RDS(ON) at VGS = 4.5V, 1.0V max gate threshold voltage, and AEC-Q101 qualification for automotive load switching. It delivers 1.1A continuous drain current at +25°C with ESD-protected gate and low input capacitance (52pF).
For engineers reviewing the DMN2451UFDQ datasheet, DMN2451UFDQ pinout, DMN2451UFDQ application, or DMN2451UFDQ equivalent, this device supports low-voltage battery-powered systems requiring fast switching, low conduction loss, and robust gate drive compatibility down to 1.5V logic.
Technical Context
This MOSFET employs a trench-gate process optimized for ultra-low VGS(TH) (0.45–1.0V) and stable RDS(ON) across temperature. Its 0.8Ω RDS(ON) at VGS = 2.5V enables direct interface with 2.5V/1.8V microcontroller GPIOs without level-shifting.
The integrated gate protection diode and ±12V VGSS rating support robust operation in noisy environments. Thermal resistance of 111°C/W (with thermal vias) and 29°C/W junction-to-case enable reliable power delivery in space-constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Supports 12V automotive and 5V/3.3V system rails with margin against transients. |
| RDS(ON) | 0.6Ω @ VGS = 4.5V - Enables <100mW conduction loss at 400mA, critical for portable battery life. |
| VGS(TH) | Max 1.0V - Ensures full enhancement with 1.5V–1.8V logic outputs, eliminating need for gate drivers. |
| Ciss | 52pF - Low input capacitance reduces gate drive power and speeds switching (tr = 2.4ns). |
| PD | 1.1W (with thermal vias) - Sustains 1.1A continuous current in compact 1.2×1.2mm footprint. |
| ESD Rating | HBM ±2kV - Integrated gate protection eliminates external TVS in most board-level ESD scenarios. |
| AEC-Q101 | Qualified - Validated for automotive body electronics including door modules and lighting control. |
Pinout & Package
U-DFN1212-3 (Type C) is a 3-terminal, bottom-exposed thermal pad package measuring 1.2 × 1.2 × 0.5 mm. The exposed die pad enhances thermal performance and must be soldered to a PCB thermal plane for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View, Marking Side) | Drain (D) | Main current path terminal; connected to internal MOSFET drain and thermal pad - requires copper pour for heat sinking. |
| Pin 2 (Top View) | Source (S) | Return path for load current; tied to ground reference in high-side switch configurations. |
| Pin 3 (Top View) | Gate (G) | Control input with integrated ESD diode to source; driven directly by 1.5V–4.5V logic without series resistor. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) ≤ 1.0V ensures reliable turn-on with 1.5V I/O, enabling direct MCU control in wearables and IoT sensors. |
| Thermally enhanced U-DFN | RθJC = 29°C/W allows >1W power handling in 1.44mm² area - ideal for space-limited USB-C PD and PMIC load switches. |
| Low Qg & fast switching | 0.7nC total gate charge and 2.4ns rise time minimize switching losses in 1–5MHz DC-DC applications. |
| AEC-Q101 qualification | Validated for automotive ambient temperatures (−40°C to +125°C case), PPAP-ready for Tier-1 supply chain integration. |
Applications
| Automotive Door Module | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Controlling window lift motor, mirror adjust, and interior lighting via 3.3V CAN/LIN microcontroller. IC Role / Device Role / Timing Role: Low-side load switch enabling precise PWM dimming and fault-current limiting. Use Value: 0.86A capability at 1.8V gate drive eliminates level shifters; AEC-Q101 compliance ensures field reliability. |
Use Scenario: Enabling/disabling VBUS path in portable chargers and docking stations with USB-C 3A/5A profiles. IC Role / Device Role / Timing Role: High-efficiency, low-RDS(ON) power path switch with fast ton/toff for dynamic load management. Use Value: 0.6Ω RDS(ON) limits voltage drop to <180mV at 3A, preserving USB-C voltage regulation margins. |
| Medical Wearable Sensor Node | Industrial PLC Digital Output |
|
Use Scenario: Power gating BLE SoC and analog front-end during sleep cycles to extend coin-cell battery life. IC Role / Device Role / Timing Role: Ultra-low-leakage (100nA IDSS) power switch with sub-1V gate compatibility. Use Value: 1.0V VGS(TH) enables wake-up from deep-sleep using 1.2V LDO output, reducing BOM count. |
Use Scenario: Driving 24V solenoid valves and indicator LEDs in DIN-rail mounted controllers with 24V DC input. IC Role / Device Role / Timing Role: Robust, thermally efficient discrete switch replacing larger SO-8 FETs in dense I/O modules. Use Value: 20V VDSS and 1.2A body diode support flyback energy recirculation without external freewheeling diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2046LSD-13 | Higher VDSS (30V), higher RDS(ON) (1.2Ω @ 4.5V), SOT-23 package | Larger footprint, lower thermal performance (RθJA = 270°C/W), no AEC-Q101 | Choose when 30V headroom is required and AEC-Q101 is not mandated. |
| AO3414 | Same 20V rating but higher VGS(TH) (1.5V max), no integrated gate ESD diode | Requires external gate protection; less suitable for uncontrolled ESD environments like automotive cabins | Choose only in cost-sensitive industrial applications where gate drive voltage ≥2.5V is guaranteed. |
Compared with DMN2451UFDQ, DMN2046LSD-13 trades thermal efficiency and automotive qualification for higher voltage margin, while AO3414 sacrifices gate robustness and low-threshold drive for lower unit cost - neither matches the combined 1.0V VGS(TH), AEC-Q101, and 0.6Ω RDS(ON) specification set.
Availability
DMN2451UFDQ is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, medical wearable power management, and industrial PLC digital outputs requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN2451UFDQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and quality systems aligned to AEC-Q200 standards.
This device belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for low-voltage, high-reliability load switching in harsh-temperature automotive and industrial environments.
FAQ
What is the maximum continuous drain current at +70°C ambient?
At TA = +70°C and VGS = 4.5V, the DMN2451UFDQ supports 0.9A continuous drain current. This derating reflects thermal limits under standard FR-4 PCB conditions with 2oz copper and thermal vias - actual current may increase with enhanced heatsinking.
Does the U-DFN1212-3 package require solder paste stencil optimization?
Yes. The 0.32mm-wide side terminals and 0.8mm thermal pad require a 0.1mm-thick stencil with 75% aperture reduction for the pad and 100% for terminals. Recommended reflow profile peaks at 260°C for 10 seconds to ensure void-free thermal pad soldering.
Can DMN2451UFDQ replace a P-channel MOSFET in high-side switching?
No. As an N-channel device, it requires gate voltage above source potential for conduction. In high-side configuration, it needs a charge pump or bootstrap circuit to achieve VGS ≥ 4.5V - unlike P-channel alternatives that operate with ground-referenced gate drive.
Is the body diode suitable for reverse polarity protection?
Yes. With 1.2A maximum forward current and 0.7–1.2V typical VSD, the intrinsic body diode provides effective reverse-polarity protection in 5V–12V systems when placed in series with the power rail, provided peak reverse current remains within SOA limits.
DMN2451UFDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 52 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN1212-3 (Type C)
DMN2451UFDQ-13 FAQ
1.How can I place an order for DMN2451UFDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2451UFDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2451UFDQ-13 reliable?
The price and inventory of DMN2451UFDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2451UFDQ-13 is usually 5 days.
3.What payment methods are accepted for DMN2451UFDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2451UFDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2451UFDQ-13?
DMN2451UFDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2451UFDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2451UFDQ-13?
For technical support, including DMN2451UFDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2451UFDQ-13 requirements.
6.How does Aetrix verify that DMN2451UFDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN2451UFDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2451UFDQ-13 meets industry standards.
7.What is the process for return or replacement of DMN2451UFDQ-13?
All DMN2451UFDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2451UFDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2451UFDQ-13 part is unused and in its original packaging.
Return procedure for DMN2451UFDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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