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Diodes Incorporated DMN2451UFDQ-7

Part No.:
DMN2451UFDQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-PowerUDFN
Datasheet:
AetrixDMN2451UFDQ-7.pdf
Description:
MOSFET N-CH 20V 900MA 3DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,857

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Product details

Overview

DMN2451UFDQ from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in U-DFN1212-3 (Type C) package, featuring 20 V VDSS, 0.6 Ω RDS(ON) @ 4.5 V VGS, and 1.1 A continuous drain current at +25°C - optimized for low-voltage load switching in automotive body electronics and portable power management.

For engineers reviewing the DMN2451UFDQ datasheet, DMN2451UFDQ pinout, DMN2451UFDQ application, or DMN2451UFDQ equivalent, this device delivers verified low-threshold operation (VGS(TH) ≤ 1.0 V), ESD-protected gate, and thermally robust performance on FR-4 with thermal vias - critical for space-constrained, battery-sensitive designs requiring AEC-Q101 compliance.

Technical Context

This MOSFET employs a trench-gate process to achieve ultra-low RDS(ON) while maintaining fast switching (tD(ON) = 3.7 ns, tF = 5.6 ns) and low input capacitance (Ciss = 52 pF). Its 1.0 V max gate threshold enables direct drive from 1.8 V and 2.5 V logic rails without level shifting.

The integrated gate protection diode and NiPdAu-plated terminals ensure robust ESD immunity (HBM > 2 kV) and solderability per MIL-STD-202. Thermal resistance is specified at RθJA = 111 °C/W with 2 oz copper and thermal vias - enabling 1.1 W power dissipation in production layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V - supports 12 V automotive systems with margin against transients
RDS(ON) 0.6 Ω @ 4.5 V VGS - enables <100 mW conduction loss at 400 mA load
VGS(TH) ≤ 1.0 V - ensures reliable turn-on with 1.8 V I/O controllers and low-power MCUs
Ciss 52 pF - minimizes gate drive energy and improves switching efficiency
Qg 0.7 nC - reduces gate driver power demand and simplifies drive circuit design
TJ Range –55 °C to +150 °C - validated for under-hood automotive environments
AEC-Q101 Qualified - meets stress test requirements for automotive discrete semiconductors

Pinout & Package

Package: U-DFN1212-3 (Type C), 1.2 mm × 1.2 mm × 0.5 mm, exposed drain pad, RoHS-compliant, halogen-free.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (D) Drain Primary current path; connected to internal die backside and exposed thermal pad for heat dissipation
Pin 2 (S) Source Reference node for gate control; forms return path for load current and body diode conduction
Pin 3 (G) Gate Control terminal with integrated ESD protection diode to source; requires <1.0 V to initiate conduction

Key Features

Feature Design Value
Ultra-low gate threshold VGS(TH) ≤ 1.0 V enables direct interface with 1.8 V/2.5 V logic without level shifters
ESD-protected gate HBM > 2 kV rating eliminates need for external gate protection in most board-level ESD environments
Thermally enhanced layout Exposed drain pad and 29 °C/W RθJC allow efficient heat transfer to PCB ground plane
Automotive-grade qualification AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities
Green packaging Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); fully RoHS 3 compliant

Applications

Automotive Body Control Module USB-C Power Delivery Load Switch

Use Scenario: Controlling 5 V/12 V auxiliary loads (e.g., LED interior lighting, window lift motors) in BCMs with 3.3 V microcontroller GPIO.

IC Role / Device Role / Timing Role: Low-side load switch with fast turn-off (tF = 5.6 ns) to prevent inductive kickback during motor de-energization.

Use Value: 0.6 Ω RDS(ON) limits voltage drop to <300 mV at 500 mA, preserving system efficiency and reducing thermal derating needs.

Use Scenario: Enabling/disabling VBUS path in USB-C PD sink applications where 1.8 V/2.5 V host controllers manage power negotiation.

IC Role / Device Role / Timing Role: High-speed, low-threshold power switch responding to PD controller's enable signal within sub-microsecond timing windows.

Use Value: 1.0 V VGS(TH) ensures full enhancement at 1.8 V logic levels, eliminating gate drive complexity and component count.

Portable Medical Sensor Node Smartphone Battery Protection Circuit

Use Scenario: Isolating sensor subsystems (e.g., ECG front-end, temperature monitor) during sleep mode to extend battery life in wearable devices.

IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ 100 nA) high-side or low-side disconnect switch controlled by ultra-low-power MCU.

Use Value: Sub-100 nA off-state leakage preserves multi-week standby time; small 1.2 mm × 1.2 mm footprint saves critical PCB area.

Use Scenario: Secondary overcurrent protection in smartphone battery packs, placed between cell and system load to interrupt fault currents.

IC Role / Device Role / Timing Role: Fast-acting current-limiting switch triggered by fuel gauge IC during short-circuit events.

Use Value: 3 A pulsed drain rating (IDM) and 1.2 A body diode forward current support safe fault clearing without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2041UFDQ-7 20 V VDSS, 0.85 Ω RDS(ON) @ 2.5 V VGS, higher RDS(ON) at same VGS Suitable for less aggressive efficiency targets; slightly slower tF (7.2 ns) Select when lower gate charge (0.5 nC) is prioritized over on-resistance at 4.5 V
AO3400A 30 V VDSS, 0.028 Ω RDS(ON) @ 10 V VGS, no AEC-Q101 qualification Higher voltage margin but lacks automotive qualification and 1.8 V drive capability Choose only for non-automotive industrial use where 30 V rating and lower RDS(ON) outweigh qualification needs

Compared with DMN2041UFDQ-7 and AO3400A, the DMN2451UFDQ uniquely balances AEC-Q101 compliance, 1.0 V gate threshold, and 0.6 Ω RDS(ON) at 4.5 V - making it the only option qualified for automotive body electronics with direct 1.8 V logic compatibility.

Availability

DMN2451UFDQ is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery load switching, and portable medical sensor nodes requiring stable component supply across extended product lifecycles.

Supply support for DMN2451UFDQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

The DMN2451UFDQ belongs to Diodes' U-DFN automotive-qualified MOSFET family, engineered specifically for low-voltage, space-constrained load switching in AEC-Q101-compliant systems.

FAQ

What is the maximum continuous drain current at +70°C ambient?

At TA = +70°C and VGS = 4.5 V, the DMN2451UFDQ supports 0.9 A continuous drain current. This derating reflects thermal limits under standard FR-4 mounting with 2 oz copper and thermal vias, as specified in Note 6 of the datasheet.

Does the DMN2451UFDQ include a body diode, and what is its forward voltage?

Yes, it integrates a parasitic body diode with typical forward voltage of 0.7 V at IS = 500 mA and VGS = 0 V. The diode is rated for up to 1.2 A continuous forward current and supports reverse recovery in synchronous rectifier or flyback configurations.

Can the DMN2451UFDQ be used in high-frequency PWM applications?

Yes - with 3.7 ns turn-on delay, 5.6 ns fall time, and 52 pF input capacitance, it supports PWM frequencies up to 2 MHz in low-duty-cycle load switching. Gate drive strength must meet Qg = 0.7 nC requirement to maintain timing integrity.

Is the U-DFN1212-3 (Type C) package compatible with standard reflow profiles?

Yes - the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C). Recommended pad layout includes a 0.8 mm × 0.8 mm thermal pad with 4–6 thermal vias to inner ground layers.

DMN2451UFDQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-PowerUDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.7 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
52 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN1212-3 (Type C)

DMN2451UFDQ-7 FAQ

1.How can I place an order for DMN2451UFDQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2451UFDQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2451UFDQ-7 reliable?

The price and inventory of DMN2451UFDQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2451UFDQ-7 is usually 5 days.

3.What payment methods are accepted for DMN2451UFDQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2451UFDQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2451UFDQ-7?

DMN2451UFDQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2451UFDQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2451UFDQ-7?

For technical support, including DMN2451UFDQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2451UFDQ-7 requirements.

6.How does Aetrix verify that DMN2451UFDQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN2451UFDQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2451UFDQ-7 meets industry standards.

7.What is the process for return or replacement of DMN2451UFDQ-7?

All DMN2451UFDQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2451UFDQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2451UFDQ-7 part is unused and in its original packaging.

Return procedure for DMN2451UFDQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2451UFDQ-7 Tags

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