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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN24H3D5L-13

Name: DMN24H3D5L-13
Brand: Diodes Incorporated
SKU: DMN24H3D5L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN24H3D5L-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN24H3D5L-13.pdf

Description:: MOSFET N-CH 240V 480MA SOT23

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Product details

Overview

DMN24H3D5L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET with 240 V drain-source breakdown voltage, 3.5 Ω R_DS(ON) at V_GS = 10 V and I_D = 0.3 A, 1.5 Ω typical R_DS(ON) at same conditions, 6.6 nC total gate charge, and SOT23 package - used as a low-power switching device in DC-DC converters and solid-state relay drivers.

For engineers reviewing the DMN24H3D5L-13 datasheet, DMN24H3D5L-13 pinout, DMN24H3D5L-13 application, or DMN24H3D5L-13 equivalent, this page delivers verified electrical parameters, thermal performance data, gate drive requirements, and real-world use context for battery-powered and space-constrained power management designs.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.0–2.5 V (typical 1.95 V), enabling direct interface with 3.3 V and 4.5 V logic controllers. Its low input capacitance (188 pF C_iss) and fast switching (2.3 ns turn-on delay, 7.2 ns fall time) support high-frequency operation up to several hundred kHz in compact DC-DC topologies.

The device integrates a body diode with 0.7–1.2 V forward voltage at 0.3 A and supports bidirectional current flow in flyback or synchronous rectifier configurations. Thermal resistance of 163 °C/W (Junction-to-Ambient, FR-4 board) and 31 °C/W (Junction-to-Case) defines its derating behavior under pulsed and continuous loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	240 V - Withstands up to 240 V drain-source voltage before avalanche conduction begins; suitable for 192 V DC bus applications.
R_DS(ON)	3.5 Ω @ V_GS = 10 V, I_D = 0.3 A - Confirmed on-resistance defining conduction loss in low-current switching paths.
I_D (continuous)	0.48 A @ T_A = +25°C - Maximum steady-state drain current under standard PCB mounting conditions.
Q_g	6.6 nC - Total gate charge required to fully switch the device; determines driver strength and switching loss at high frequency.
C_iss	188 pF - Input capacitance affecting gate drive loop stability and rise/fall time in PWM control circuits.
T_J range	−55°C to +150°C - Operational junction temperature span supporting industrial and automotive ambient environments.
P_D	0.76 W - Maximum power dissipation on FR-4 board with minimal copper; limits usable current at elevated ambient temperatures.

Pinout & Package

Package: SOT23 - surface-mount plastic case, UL 94V-0 rated, 0.008 g weight, moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (high-side or low-side switch node)	Connected to load or supply rail; carries full switched current and must be routed with adequate trace width and thermal relief.
Gate (G)	Control electrode for channel formation	Requires clean, low-impedance drive path; sensitive to noise due to 1.95 V typical V_GS(th); benefits from gate resistor for EMI control.
Source (S)	Reference terminal for gate drive and current return path	Typically tied to ground or low-side return; forms common reference for V_GS and influences body diode conduction direction.

Key Features

Feature	Design Value
Low gate threshold voltage	V_GS(th) = 1.0–2.5 V enables reliable turn-on from 3.3 V microcontrollers without level-shifting circuitry.
Low input capacitance	C_iss = 188 pF reduces gate drive power and improves switching efficiency in high-frequency DC-DC converters.
Fast switching speed	t_D(on) = 2.3 ns, t_f = 7.2 ns minimizes transition losses and supports >500 kHz PWM operation in space-limited designs.
SOT23 footprint	Standardized 3-pin surface-mount package compatible with automated assembly and reflow processes; saves PCB area vs. SO-8 or TO-252.
Lead-free & halogen-free	RoHS 2 compliant, <900 ppm Br/Cl, <1000 ppm Sb - meets environmental requirements for consumer and industrial end equipment.

Applications

DC-DC Converters

Battery Management Systems

Use Scenario: Step-down regulation in portable medical monitors powered by single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in buck converter topology operating at 300 kHz.

Use Value: 3.5 Ω R_DS(ON) at 10 V gate drive ensures <15 mW conduction loss at 200 mA load, extending battery runtime.

Use Scenario: Load switching and protection in smart battery packs for handheld test equipment.

IC Role / Device Role / Timing Role: High-voltage disconnect switch isolating battery terminals during fault or sleep mode.

Use Value: 240 V V_DSS provides margin above 192 V maximum pack voltage, preventing avalanche failure during transient overvoltage events.

Solid-State Relays

LED & Display Drivers

Use Scenario: Replacement for electromechanical relays in HVAC control panels requiring silent, long-life switching.

IC Role / Device Role / Timing Role: Output stage switch driving 24 V AC/DC solenoid valves and indicator lamps.

Use Value: Fast 7.2 ns fall time eliminates contact bounce artifacts and supports precise timing in sequenced actuation routines.

Use Scenario: Current-limiting switch for segmented LED backlight arrays in industrial HMIs.

IC Role / Device Role / Timing Role: Individual segment enable transistor controlled by 3.3 V GPIO from ARM Cortex-M0+ MCU.

Use Value: 1.95 V typical V_GS(th) guarantees full enhancement with 3.3 V logic, eliminating need for external gate bias components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2041UFB-7	Lower V_DSS (200 V), lower R_DS(ON) (1.2 Ω @ 4.5 V), higher I_D (0.75 A), same SOT23 package	Not suitable for 192 V bus applications; better for ≤16 V systems with higher current demands	Select when operating voltage is ≤200 V and lower conduction loss at 4.5 V drive is prioritized over voltage margin.
SI2302DS-T1-GE3	Lower V_DSS (20 V), much lower R_DS(ON) (0.075 Ω @ 4.5 V), higher I_D (2.6 A), same SOT23	Only viable for ≤12 V logic-level loads; cannot replace in 240 V-rated circuits	Choose only for low-voltage, high-current digital load switching where 240 V capability is unnecessary.

Compared with DMN2041UFB-7 and SI2302DS-T1-GE3, the DMN24H3D5L-13 uniquely balances 240 V blocking capability with logic-compatible gate drive and SOT23 form factor - making it irreplaceable in medium-voltage, space-constrained, battery-operated power switches where voltage margin and footprint are both critical.

Availability

DMN24H3D5L-13 is available at Aetrix Electronics and suitable for DC-DC converters, solid-state relays, and battery-operated systems requiring stable component supply across extended production lifecycles.

Supply support for DMN24H3D5L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets since 1960.

This part belongs to Diodes' high-voltage logic-level MOSFET product line, engineered specifically for compact, efficient switching in battery-powered and isolated power management subsystems where voltage headroom and gate drive simplicity are essential.

FAQ

What is the maximum continuous drain current for DMN24H3D5L-13 at +70°C ambient?

The maximum continuous drain current is 0.39 A at T_A = +70°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced power dissipation capability at elevated ambient temperatures on a standard FR-4 PCB with minimum pad layout.

Can DMN24H3D5L-13 be driven directly from a 3.3 V microcontroller GPIO?

Yes - with a typical gate threshold voltage of 1.95 V and guaranteed turn-on down to 1.0 V, the device achieves full enhancement at 3.3 V V_GS, delivering 3.5 Ω R_DS(ON) at 0.2 A drain current. No level shifter is required for basic on/off control.

Does DMN24H3D5L-13 include an integrated body diode, and what is its forward voltage?

Yes, it features an inherent parasitic body diode with a typical forward voltage of 0.7 V at I_S = 0.3 A and V_GS = 0 V. The diode is rated for 1.5 A continuous body current and supports freewheeling paths in inductive load switching.

What is the thermal resistance from junction to ambient under standard PCB mounting conditions?

R_θJA is 163 °C/W when mounted on a single-sided FR-4 board with minimum recommended copper pad layout. With enhanced 2 oz copper and a 1-inch square thermal pad, it improves to 99 °C/W - a key parameter for calculating safe operating temperature margins.

DMN24H3D5L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 240 V

Current - Continuous Drain (Id) @ 25°C:: 480mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 3.3V, 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 188 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 760mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN24H3D5L-13 FAQ

1.How can I place an order for DMN24H3D5L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN24H3D5L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN24H3D5L-13 reliable?

The price and inventory of DMN24H3D5L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN24H3D5L-13 is usually 5 days.

3.What payment methods are accepted for DMN24H3D5L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN24H3D5L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN24H3D5L-13?

DMN24H3D5L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN24H3D5L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN24H3D5L-13?

For technical support, including DMN24H3D5L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN24H3D5L-13 requirements.

6.How does Aetrix verify that DMN24H3D5L-13 is sourced from the original manufacturer or authorized distributors?

All DMN24H3D5L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN24H3D5L-13 meets industry standards.

7.What is the process for return or replacement of DMN24H3D5L-13?

All DMN24H3D5L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN24H3D5L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN24H3D5L-13 part is unused and in its original packaging.

Return procedure for DMN24H3D5L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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