My Inquiry
My Account
Diodes Incorporated DMN2500UFB4-7
- Part No.:
- DMN2500UFB4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2500UFB4-7.pdf
- Description:
- MOSFET N-CH 20V 810MA 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,866
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2500UFB4-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 1.0 mm × 0.6 mm X2-DFN1006-3 package, rated for 20 V VDSS, 0.4 Ω RDS(ON) @ 4.5 V VGS, and 1 A continuous drain current at +25°C - optimized for ultra-compact DC-DC converter power switches in space-constrained portable electronics.
For engineers reviewing the DMN2500UFB4-7 datasheet, DMN2500UFB4-7 pinout, DMN2500UFB4-7 application, or DMN2500UFB4-7 equivalent, key selection criteria include gate threshold voltage (≤1.0 V), low input capacitance (60.7 pF), fast switching times (tD(ON) = 5.1 ns), thermal resistance (134 °C/W on enhanced pad), and AEC-Q101 qualification for reliability-critical subsystems.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining sub-1.0 V gate threshold and robust ESD protection (HBM >2 kV). Its 0.4 mm max profile enables placement beneath shields or in stacked PCB layers.
The device operates with VGS as low as 1.8 V (RDS(ON) = 0.7 Ω), supports pulsed drain currents up to 4 A, and delivers stable on-resistance across −55°C to +150°C junction temperature - critical for thermally aggressive battery-powered environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports 12 V rail switching and 5 V logic-level gate drive without level-shifting |
| RDS(ON) @ 4.5 V | 0.4 Ω - limits conduction loss to ≤0.4 W at 1 A, enabling >90% efficiency in 1 MHz buck converters |
| VGS(TH) Max | 1.0 V - ensures full enhancement with 1.8 V I/O domains (e.g., modern microcontrollers, PMICs) |
| Ciss | 60.7 pF - reduces gate drive power and improves switching speed in high-frequency topologies |
| PD (enhanced pad) | 0.95 W - allows 1 A continuous operation at +70°C ambient with minimal heatsinking |
| TJ Range | −55°C to +150°C - qualified for automotive cabin and industrial edge node deployments |
Pinout & Package
Package: X2-DFN1006-3 - ultra-thin (0.4 mm max height), 1.0 mm × 0.6 mm footprint, NiPdAu-plated copper leadframe, moisture sensitivity Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Connected to internal die backside; requires thermal pad connection for power dissipation |
| Source (S) | Reference node for gate control and current return | Internally tied to exposed thermal pad; must be soldered to PCB ground plane for RθJA = 134 °C/W |
| Gate (G) | Control electrode for channel formation | ESD-protected input; driven by low-voltage logic; 93 Ω gate resistance minimizes ringing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) ≤ 1.0 V enables direct drive from 1.8 V GPIOs without gate drivers |
| Thermally optimized package | X2-DFN1006-3 with exposed source pad achieves 100 °C/W transient RθJA under pulse conditions |
| Low dynamic losses | Qg = 737 pC and Qgd/Qg = 15.8% reduce Miller-induced switching delay and improve hard-switching efficiency |
| AEC-Q101 qualified | Stress-tested for automotive-grade reliability including HTGB, HTRB, and temperature cycling per JESD22-A108 |
Applications
| USB-C Power Delivery Switch | Wearable Battery Protection |
|---|---|
Use Scenario: Bidirectional 5–20 V power path control in compact USB-C PD sink adapters. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS discharge and reverse-current blocking. Use Value: 0.4 Ω RDS(ON) limits voltage drop to <200 mV at 500 mA, preserving PD negotiation margins. |
Use Scenario: Overcurrent and short-circuit protection in coin-cell–powered hearables with 1.8 V system rails. IC Role / Device Role / Timing Role: Primary battery disconnect switch activated by fuel gauge or PMIC fault signal. Use Value: 1.0 V VGS(TH) ensures turn-on with weak 1.8 V pull-up, eliminating external bias circuitry. |
| IoT Sensor Node Power Gating | Automotive Body Control Module |
Use Scenario: Periodic wake-up of BLE SoCs from deep-sleep using timed power gating of RF and sensor subsystems. IC Role / Device Role / Timing Role: High-efficiency enable switch for 3.3 V LDO outputs feeding sensors and radios. Use Value: 60.7 pF Ciss and 5.1 ns tD(ON) support 10 kHz gating cycles with <1 µs transition time. |
Use Scenario: LED driver dimming and solenoid pre-charge in door module ECUs operating at −40°C to +105°C. IC Role / Device Role / Timing Role: Low-side driver for 12 V loads with integrated body diode for inductive kickback clamping. Use Value: AEC-Q101 qualification and −55°C to +150°C TJ range ensure functional safety compliance without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage power switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2450UFB4-7 | Lower RDS(ON) (0.35 Ω @ 4.5 V) but higher VGS(TH) (1.2 V max); same package and pinout | Better conduction efficiency above 2.5 V gate drive; unsuitable for 1.8 V logic interfaces | Select when gate drive ≥2.5 V and lowest possible RDS(ON) is prioritized over ultra-low threshold |
| AO3414 | Higher RDS(ON) (0.55 Ω @ 4.5 V), larger SOT-23 package (2.9 mm × 1.6 mm), no AEC-Q101 rating | Compatible with legacy board layouts but adds 3× footprint area and lacks automotive qualification | Choose only for cost-sensitive non-automotive designs where space and reliability requirements are relaxed |
Compared with DMN2450UFB4-7 and AO3414, the DMN2500UFB4-7 uniquely balances 1.0 V gate threshold, AEC-Q101 compliance, and 1.0 mm × 0.6 mm footprint - making it optimal for next-gen wearables and automotive body electronics where both logic compatibility and miniaturization are mandatory.
Availability
DMN2500UFB4-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, wearable battery management, and IoT sensor node power gating requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN2500UFB4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for consumer, industrial, and automotive markets.
The DMN2500UFB4-7 belongs to Diodes' Ultra-Small Signal MOSFET product line, engineered specifically for space-constrained, low-voltage power switching in battery-powered and automotive electronics.
FAQ
Is DMN2500UFB4-7 suitable for 1.8 V gate drive applications?
Yes. With a maximum gate threshold voltage of 1.0 V and guaranteed turn-on at VGS = 1.8 V (RDS(ON) = 0.7 Ω), this MOSFET is explicitly designed for direct interface with 1.8 V logic families and low-voltage PMICs without external level shifting.
What is the recommended PCB layout for thermal performance?
Use the manufacturer's suggested X2-DFN1006-3 pad layout with a minimum 1-inch square copper pour connected to the exposed source pad. This configuration achieves RθJA = 134 °C/W (steady state) and supports 0.95 W power dissipation at +70°C ambient.
Does DMN2500UFB4-7 have integrated ESD protection?
Yes. The gate is protected with on-chip ESD structures rated to >2 kV HBM per JESD22-A114, eliminating the need for external TVS diodes in typical board-level ESD environments (IEC 61000-4-2 Level 2).
Why is DMN2500UFB4-7 marked "Not Recommended for New Design"?
This advisory reflects Diodes Incorporated's internal roadmap - the part remains fully qualified and in active production, but newer alternatives like DMN2450UFB4-7 offer marginally improved RDS(ON). Legacy designs may continue using DMN2500UFB4-7 without risk of obsolescence in the near term.
DMN2500UFB4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 810mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.74 nC @ 4.5 V
- Vgs (Max):
- ±6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60.67 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 460mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2500UFB4-7 FAQ
1.How can I place an order for DMN2500UFB4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2500UFB4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2500UFB4-7 reliable?
The price and inventory of DMN2500UFB4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2500UFB4-7 is usually 5 days.
3.What payment methods are accepted for DMN2500UFB4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2500UFB4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2500UFB4-7?
DMN2500UFB4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2500UFB4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2500UFB4-7?
For technical support, including DMN2500UFB4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2500UFB4-7 requirements.
6.How does Aetrix verify that DMN2500UFB4-7 is sourced from the original manufacturer or authorized distributors?
All DMN2500UFB4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2500UFB4-7 meets industry standards.
7.What is the process for return or replacement of DMN2500UFB4-7?
All DMN2500UFB4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2500UFB4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2500UFB4-7 part is unused and in its original packaging.
Return procedure for DMN2500UFB4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2500UFB4-7 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
