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Diodes Incorporated DMN2500UFB4-7B
- Part No.:
- DMN2500UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2500UFB4-7B.pdf
- Description:
- MOSFET N-CH X2-DFN1006-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,483
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Product details
Overview
DMN2500UFB4-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 1.0 mm × 0.6 mm X2-DFN1006-3 package, rated for 20 V VDSS, 0.4 Ω RDS(ON) @ 4.5 V VGS, and 1 A continuous drain current at +25°C. It features ultra-low gate threshold voltage (VGS(TH) ≤ 1.0 V), ESD-protected gate, and is qualified to AEC-Q101 for automotive-grade reliability - deployed in compact DC-DC converters and portable power management circuits.
For engineers reviewing the DMN2500UFB4-7B datasheet, DMN2500UFB4-7B pinout, DMN2500UFB4-7B application, or DMN2500UFB4-7B equivalent, key selection criteria include low-voltage gate drive compatibility (1.8 V operation), thermal resistance (RθJA = 134 °C/W on 1-in² copper), and ultra-thin 0.4 mm profile for space-constrained PCB layouts.
Technical Context
This MOSFET employs planar trench-gate architecture optimized for low RDS(ON) while maintaining fast switching (tF = 12.3 ns, tD(OFF) = 26.7 ns) and low input capacitance (Ciss = 60.7 pF). Its 1.0 V max VGS(TH) enables direct interfacing with 1.8 V logic outputs without level shifting.
The device integrates an intrinsic body diode with VSD = 0.7–1.2 V at 150 mA and supports synchronous rectification in buck converters. Package-level ESD protection (HBM > 2 kV) and halogen/antimony-free "Green" construction meet automotive and portable electronics compliance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 3.3 V and 5 V rail applications |
| RDS(ON) @ 4.5 V | 0.4 Ω - Enables <100 mW conduction loss at 500 mA in high-efficiency point-of-load regulators |
| VGS(TH) Max | 1.0 V - Ensures full enhancement with 1.8 V microcontroller GPIOs without gate driver |
| Ciss | 60.7 pF - Reduces gate drive power and improves switching efficiency in MHz-range converters |
| RθJA (1-in² Cu) | 134 °C/W - Supports 950 mW steady-state dissipation at +70°C ambient on standard FR-4 |
| Package Height | 0.4 mm max - Fits under 0.5 mm board-to-board connectors and ultra-thin battery compartments |
| AEC-Q101 Qualified | Yes - Validated for automotive infotainment and ADAS subsystems requiring high-reliability discrete switches |
Pinout & Package
X2-DFN1006-3 surface-mount package: 1.0 mm × 0.6 mm footprint, 0.4 mm maximum height, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; tied to ground or low-side reference in high-side switch configurations |
| Pin 2 (Drain) | Drain terminal (D) | Main power output node; connects to inductor or load in buck converter topologies |
| Pin 3 (Gate) | Gate terminal (G) | Control input with 93 Ω gate resistance; compatible with 1.8 V CMOS drivers and low-power MCU pins |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VGS(TH) | ≤1.0 V ensures turn-on with 1.8 V logic, eliminating need for level shifters in battery-powered systems |
| Low-profile DFN package | 0.4 mm height enables stacking under shields or integration into wearables with strict Z-axis constraints |
| ESD-protected gate | HBM > 2 kV rating reduces risk of assembly-line damage and improves field robustness in unshielded environments |
| Lead-free & Green | Halogen- and antimony-free, RoHS 3 compliant - meets automotive ELV and consumer WEEE regulatory mandates |
| Fast switching | tR/tF = 7.4/12.3 ns minimizes transition losses in 1–3 MHz DC-DC converters |
Applications
| USB Power Delivery Switching | Wearable Battery Protection |
|---|---|
|
Use Scenario: High-side load switch controlling 5 V USB PD input to PMIC in smartwatch or hearable. IC Role / Device Role: Low-voltage-controlled power path switch enabling dynamic input selection and fault isolation. Use Value: 1.0 V VGS(TH) allows direct control from 1.8 V SoC GPIO; 0.4 mm height avoids interference with flex cable routing. |
Use Scenario: Overcurrent and short-circuit protection between Li-ion cell and charging IC in fitness tracker. IC Role / Device Role: Reverse-polarity and overtemperature-protected series switch in battery feed path. Use Value: 0.4 Ω RDS(ON) limits voltage drop to <200 mV at 500 mA, preserving battery runtime and thermal margin. |
| IoT Sensor Node Power Gating | Automotive Cabin Controller Load Switch |
|
Use Scenario: Periodic wake-up power gating for BLE sensor module powered by coin cell. IC Role / Device Role: Ultra-low-quiescent-current high-side switch enabling sub-μA sleep mode leakage. Use Value: IDSS ≤ 100 nA at 20 V ensures <1 μA total system standby current, extending 10-year battery life. |
Use Scenario: Controlled power delivery to LED backlight and touch controller in automotive HVAC panel. IC Role / Device Role: AEC-Q101-qualified load switch managing inrush current and providing diagnostic feedback. Use Value: Qualified to -55°C to +150°C junction temperature and 4 A pulsed IDM supports automotive cold-crank and load-dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2450UFB4-7B | Lower RDS(ON) (0.35 Ω @ 4.5 V) but higher VGS(TH) (1.2 V max); same X2-DFN1006-3 package | Better conduction efficiency above 4.5 V gate drive; less suitable for 1.8 V logic interfaces | Select when gate drive ≥ 3.3 V is available and lowest possible I²R loss is critical |
| AO3414 | Higher RDS(ON) (0.55 Ω @ 4.5 V), no AEC-Q101 qualification, SOT-23 package (1.3 mm height) | Larger footprint and taller profile; not automotive-qualified; lower cost for non-automotive consumer use | Choose for cost-sensitive industrial or consumer designs where AEC-Q101 and 0.4 mm height are not required |
Compared with DMN2450UFB4-7B and AO3414, DMN2500UFB4-7B uniquely balances 1.0 V gate threshold, AEC-Q101 qualification, and 0.4 mm height - making it optimal for space-constrained automotive and portable electronics where 1.8 V logic control and reliability are mandatory.
Availability
DMN2500UFB4-7B is available at Aetrix Electronics and suitable for USB PD power switching, wearable battery protection, and IoT sensor node power gating requiring stable component supply across production lifecycles.
Supply support for DMN2500UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection.
This MOSFET belongs to Diodes' X2-DFN ultra-small signal FET product line, engineered specifically for space- and power-constrained portable and automotive applications demanding low-voltage gate drive and AEC-Q101 compliance.
FAQ
Is DMN2500UFB4-7B suitable for 1.8 V microcontroller GPIO direct drive?
Yes. With a maximum gate threshold voltage of 1.0 V and guaranteed turn-on at VGS ≥ 1.2 V, DMN2500UFB4-7B fully enhances using standard 1.8 V logic outputs. Measured RDS(ON) is 0.7 Ω at VGS = 1.8 V and ID = 350 mA, confirming robust low-voltage operation without external level shifting.
What is the thermal performance on a standard FR-4 PCB?
When mounted on FR-4 with 1-inch square copper pad (2 oz), DMN2500UFB4-7B achieves RθJA = 134 °C/W. At 1 A drain current and 0.4 Ω RDS(ON), power dissipation is 400 mW, resulting in ~54°C junction-to-ambient rise - well within its -55°C to +150°C operating range.
Does this part have integrated ESD protection?
Yes. The device incorporates gate oxide ESD protection rated to >2 kV HBM per JESD22-A114. This is confirmed in the "Features and Benefits" section and supported by test data in the "Electrical Characteristics" table (IGSS ≤ ±1.0 µA at ±4.5 V).
Why is DMN2500UFB4-7B marked "NOT RECOMMENDED FOR NEW DESIGN"?
This marking reflects Diodes Incorporated's internal product roadmap guidance - indicating that newer-generation alternatives (e.g., DMN2450UFB4) offer improved RDS(ON) or enhanced features. However, DMN2500UFB4-7B remains fully qualified, in active production, and supported with full datasheet specifications and AEC-Q101 certification.
DMN2500UFB4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 810mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.737 nC @ 4.5 V
- Vgs (Max):
- ±6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60.67 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 460mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2500UFB4-7B FAQ
1.How can I place an order for DMN2500UFB4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2500UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2500UFB4-7B reliable?
The price and inventory of DMN2500UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2500UFB4-7B is usually 5 days.
3.What payment methods are accepted for DMN2500UFB4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2500UFB4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2500UFB4-7B?
DMN2500UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2500UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2500UFB4-7B?
For technical support, including DMN2500UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2500UFB4-7B requirements.
6.How does Aetrix verify that DMN2500UFB4-7B is sourced from the original manufacturer or authorized distributors?
All DMN2500UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2500UFB4-7B meets industry standards.
7.What is the process for return or replacement of DMN2500UFB4-7B?
All DMN2500UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2500UFB4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2500UFB4-7B part is unused and in its original packaging.
Return procedure for DMN2500UFB4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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