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Diodes Incorporated DMN2501UFB4-7
- Part No.:
- DMN2501UFB4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2501UFB4-7.pdf
- Description:
- MOSFET N-CH 20V 1A X2-DFN1006-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,900
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Product details
Overview
DMN2501UFB4-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 1.0 mm × 0.6 mm X2-DFN1006-3 package, rated for 20 V VDS, 1.5 A continuous drain current at VGS = 4.5 V, and RDS(on) as low as 170 mΩ (typ) under that condition. It features a gate threshold voltage of 1.0 V max and is ESD-protected, targeting high-efficiency DC-DC converters in space-constrained portable power rails.
For engineers reviewing the DMN2501UFB4-7 datasheet, DMN2501UFB4-7 pinout, DMN2501UFB4-7 application, or DMN2501UFB4-7 equivalent, key selection criteria include ultra-low gate threshold (VGS(th) ≤ 1.0 V), sub-0.5 Ω on-resistance at 1.8 V drive, 0.4 mm max profile, and AEC-Q101 qualification for automotive-grade reliability in compact load-switching roles.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) while maintaining fast switching (tD(on) = 6.6 ns, tD(off) = 40.4 ns) and low input capacitance (Ciss = 82 pF). Its 1.0 V max VGS(th) enables direct interface with 1.8 V logic and battery-powered microcontrollers without level-shifting.
The device integrates a body diode with VSD = 0.7–1.2 V at IS = 150 mA and supports pulsed drain currents up to 6 A. Thermal resistance is 110 °C/W (steady-state, 1-inch copper pad), enabling operation up to +150 °C junction temperature in thermally constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - Supports 12 V and 5 V rail switching with 65 % derating margin at full temp. |
| RDS(on) @ VGS = 4.5 V | 400 mΩ max - Ensures <150 mW conduction loss at 600 mA, critical for >90 % efficiency in buck converter high-side switches. |
| VGS(th) | 1.0 V max - Enables reliable turn-on from 1.8 V I/O domains, eliminating external gate drivers in low-voltage IoT sensor nodes. |
| Ciss | 82 pF - Reduces gate drive power and speeds up switching transitions in high-frequency (>1 MHz) point-of-load regulators. |
| TJ Range | −55 °C to +150 °C - Qualified per AEC-Q101, suitable for under-hood automotive modules and industrial edge controllers. |
| Package | X2-DFN1006-3 - 1.0 × 0.6 mm footprint with 0.4 mm max height, compatible with 0201-class PCB assembly and dense wearable PCBs. |
Pinout & Package
The DMN2501UFB4-7 uses the X2-DFN1006-3 surface-mount package: a 3-terminal, leadless, bottom-terminated DFN with exposed drain pad. Dimensions are 1.0 mm × 0.6 mm × 0.4 mm max. Pin 1 (Gate) and Pin 2 (Source) are on one side; Pin 3 (Drain) occupies the opposite side and the entire thermal pad underneath.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 1.0–8 V logic-level drive; ESD-protected with integrated gate protection diode. |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or low-side return path; forms cathode of body diode. |
| 3 (D) | Drain | Power output node; connected to load or switching node; thermally coupled to PCB via exposed copper pad. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VGS(th) | 1.0 V max ensures robust turn-on from 1.8 V microcontroller GPIOs without external biasing. |
| Low RDS(on) at low VGS | 700 mΩ max @ VGS = 1.8 V enables efficient operation in single-cell Li-ion (2.5–4.2 V) power paths. |
| ESD-protected gate | HBM rating ≥2 kV (per AEC-Q101) eliminates need for external gate protection in handheld ESD-prone environments. |
| AEC-Q101 qualified | Validated for automotive applications including infotainment power sequencing and ADAS camera module bias control. |
| Green, halogen-free construction | Meets JEDEC J-STD-020 Level 1 moisture sensitivity and RoHS/REACH compliance for global industrial shipments. |
Applications
| Battery-Powered Load Switch | USB-C Power Delivery Sink |
|---|---|
|
Use Scenario: Enabling/disabling power to Bluetooth LE sensors in wearables using a 1.8 V MCU GPIO. IC Role / Device Role: Low-side load switch controlling VDD to peripheral ICs. Use Value: 1.0 V VGS(th) guarantees turn-on with no level shifter; 0.4 mm height fits behind display bezels. |
Use Scenario: Controlling 5 V bus power to USB-C accessory ports in docking stations. IC Role / Device Role: High-side power switch managing inrush and fault isolation. Use Value: 20 V rating accommodates 5 V ±10 % tolerance; 1.5 A ID supports USB-C 3 A sink capability. |
| DC-DC Converter Synchronous Rectifier | Automotive Camera Module Bias |
|
Use Scenario: Replacing Schottky diode in 12 V → 3.3 V buck converter for PoE-powered IP cameras. IC Role / Device Role: Synchronous rectifier in secondary-side power stage. Use Value: 170 mΩ RDS(on) cuts conduction loss by >60 % vs. 0.4 V Schottky, improving efficiency by 2.1 % at 1 A. |
Use Scenario: Providing controlled 5 V bias to CMOS image sensor and ISP in rear-view camera modules. IC Role / Device Role: Protected power switch with reverse-polarity and overcurrent resilience. Use Value: AEC-Q101 qualification ensures operation at 125 °C ambient; body diode blocks reverse battery connection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK3-7 | Higher VDS (30 V), higher RDS(on) (600 mΩ @ 4.5 V), same X2-DFN1006-3 package. | Better suited for 24 V industrial I/O modules where 20 V margin is insufficient. | Select when higher breakdown voltage is required and 0.2 A lower ID is acceptable. |
| AO3400A | Same VDS (30 V), lower RDS(on) (28 mΩ @ 10 V), but VGS(th) = 0.7–1.4 V and SOT-23 package (larger footprint). | Requires 3.3 V gate drive; unsuitable for 1.8 V logic; not AEC-Q101 qualified. | Choose only if board space allows SOT-23 and system uses ≥3.3 V control signals. |
Compared with DMN2501UFB4-7, DMN2004LK3-7 trades lower on-resistance for higher voltage rating and reduced current handling, while AO3400A offers superior RDS(on) at the cost of gate drive compatibility, package size, and automotive qualification-making DMN2501UFB4-7 optimal for 1.8 V–4.5 V logic-driven, space-limited automotive and portable designs.
Availability
DMN2501UFB4-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery subsystems, and automotive camera modules requiring stable component supply across production lifecycles.
Supply support for DMN2501UFB4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This device belongs to Diodes' X2-DFN logic-level MOSFET product line, engineered specifically for ultra-compact, high-efficiency power switching in portable, automotive, and industrial applications where gate drive voltage headroom is limited.
FAQ
What is the maximum continuous drain current for DMN2501UFB4-7 at 70°C ambient?
At TA = +70°C with a 1-inch square copper pad (Note 6), the DMN2501UFB4-7 supports 1.2 A continuous drain current at VGS = 4.5 V. This is derated from its 1.5 A rating at 25°C due to thermal resistance reduction from 251 °C/W to 110 °C/W under enhanced PCB copper conditions.
Does DMN2501UFB4-7 have a built-in body diode, and what is its forward voltage?
Yes, it integrates a parasitic body diode with VSD = 0.7 V (min) to 1.2 V (max) at IS = 150 mA and TA = 25°C. This diode enables freewheeling in synchronous buck topologies and provides reverse-polarity protection in load-switch configurations.
Is the X2-DFN1006-3 package compatible with standard reflow profiles for lead-free soldering?
Yes-the package is fully RoHS-compliant and qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity. It supports standard lead-free reflow profiles (peak 260°C, 60 sec max above 217°C) without popcorn cracking or delamination when stored and handled per MSL-1 guidelines.
Can DMN2501UFB4-7 be used in linear regulation mode?
No-it is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve (Fig. 12) shows limited DC capability (≤0.3 W at 25°C ambient), and thermal runaway risk increases rapidly above VDS > 5 V in linear mode. Use only in switching applications with proper gate drive and layout.
DMN2501UFB4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 82 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2501UFB4-7 FAQ
1.How can I place an order for DMN2501UFB4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2501UFB4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2501UFB4-7 reliable?
The price and inventory of DMN2501UFB4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2501UFB4-7 is usually 5 days.
3.What payment methods are accepted for DMN2501UFB4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2501UFB4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2501UFB4-7?
DMN2501UFB4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2501UFB4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2501UFB4-7?
For technical support, including DMN2501UFB4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2501UFB4-7 requirements.
6.How does Aetrix verify that DMN2501UFB4-7 is sourced from the original manufacturer or authorized distributors?
All DMN2501UFB4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2501UFB4-7 meets industry standards.
7.What is the process for return or replacement of DMN2501UFB4-7?
All DMN2501UFB4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2501UFB4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2501UFB4-7 part is unused and in its original packaging.
Return procedure for DMN2501UFB4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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