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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2550UFA-7B

Name: DMN2550UFA-7B
Brand: Diodes Incorporated
SKU: DMN2550UFA-7B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2550UFA-7B

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: DMN2550UFA-7B.pdf

Description:: MOSFET N-CH 20V 600MA 3DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN2550UFA-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in a 0.48 mm² X2-DFN0806-3 package, featuring 0.45 Ω R_DS(ON) at V_GS = 4.5 V, 1.0 V max gate threshold voltage, and ESD-protected gate. It serves as a low-voltage load switch in space-constrained power management circuits such as USB port protection and battery-powered sensor nodes.

For engineers reviewing the DMN2550UFA-7B datasheet, DMN2550UFA-7B pinout, DMN2550UFA-7B application, or DMN2550UFA-7B equivalent, key selection criteria include ultra-low V_GS(th), sub-1Ω on-resistance down to 1.5V drive, thermal resistance of 353°C/W, and compatibility with 0.4 mm max profile PCB layouts.

Technical Context

This MOSFET employs a trench-gate process optimized for low gate charge (Q_g = 0.88 nC) and fast switching (t_D(on) = 7.1 ns, t_D(off) = 105 ns), enabling high-efficiency DC-DC converter synchronous rectification and load-switching in portable electronics. Its 1.0 V max V_GS(th) supports direct interfacing with 1.8 V and 2.5 V logic outputs without level shifting.

The device integrates an intrinsic body diode with V_SD = 1.0 V at I_S = 10 mA and exhibits stable R_DS(ON) across −55°C to +150°C junction temperature, validated by normalized on-resistance curves and SOA plots up to 100 µs pulses. Package-level thermal performance is specified per JEDEC JESD51-14 with FR-4 mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum drain-source blocking voltage for 3.3 V and 5 V rail applications.
R_DS(ON) @ V_GS = 4.5 V	0.45 Ω max - Enables ≤225 mW conduction loss at 0.6 A continuous current.
V_GS(th) max	1.0 V - Guarantees turn-on with 1.8 V I/O controllers; eliminates need for gate boosters.
Q_g	0.88 nC - Reduces gate drive power and enables >1 MHz switching in compact DC-DC stages.
R_θJA	353 °C/W - Validated on FR-4 board with minimum pad layout; defines thermal derating above 25°C ambient.
C_iss	52.5 pF - Limits Miller effect during high-speed switching; supports clean gate waveform integrity.

Pinout & Package

Package: X2-DFN0806-3, 0.4 mm maximum height, 0.48 mm² footprint, 3-terminal leadless plastic package with NiPdAu-plated copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (top-side exposed pad)	Connected to PCB thermal pad for heat dissipation; requires solder mask defined land pattern per AP02001.
Source (S)	Reference node for gate control and current return path	Internally tied to exposed thermal pad; must be connected to system ground plane for optimal R_θJA.
Gate (G)	Control input for channel modulation	ESD-protected (HBM > 2 kV); driven directly from 1.8 V/2.5 V GPIO; no external gate resistor required for <100 kHz switching.

Key Features

Feature	Design Value
Ultra-low gate threshold	1.0 V max ensures reliable turn-on with 1.8 V logic; eliminates level-shifter dependency in wearables and IoT sensors.
Miniature footprint	0.48 mm² area - 16× smaller than SOT-23, enabling dense routing in Bluetooth LE modules and hearing aid PCBs.
Low R_DS(ON) at low V_GS	0.75 Ω @ V_GS = 1.8 V - maintains <500 mW loss at 0.5 A in always-on battery monitoring paths.
ESD-protected gate	HBM rating >2 kV per JESD22-A114 - reduces need for external TVS in handheld device front-end switches.

Applications

USB Port Power Switch

Li-ion Battery Protection

Use Scenario: Controlled enable/disable of 5 V USB VBUS to peripheral devices in smartphones and tablets.

IC Role / Device Role / Timing Role: Low-side load switch managing power delivery path with fast turn-off to prevent backfeed during hot-plug events.

Use Value: 1.0 V V_GS(th) allows direct control from baseband processor GPIO; 0.45 Ω R_DS(ON) limits voltage drop to <270 mV at 600 mA.

Use Scenario: Overcurrent and short-circuit isolation between Li-ion cell and system load in portable medical monitors.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC secondary path, activated only during fault conditions.

Use Value: 0.55 Ω R_DS(ON) @ V_GS = 2.5 V ensures minimal self-heating during brief fault currents; 150°C T_J(max) supports sealed enclosure operation.

Wearable Sensor Node Power Gate

Low-Voltage Logic-Level Interface

Use Scenario: Power gating of BLE transceiver and accelerometer in coin-cell–powered fitness trackers.

IC Role / Device Role / Timing Role: High-side or low-side switch isolating subsystems during deep-sleep mode to reduce quiescent current.

Use Value: 0.4 mm max package height fits under 1.0 mm Z-height connectors; 100 nA I_DSS prevents leakage-induced battery drain over months.

Use Scenario: Level translation between 1.8 V FPGA I/O banks and 3.3 V analog front-end circuitry in industrial data loggers.

IC Role / Device Role / Timing Role: Bidirectional analog switch controlled by FPGA output, leveraging low C_iss and symmetric R_DS(ON).

Use Value: 52.5 pF C_iss and 5.2 pF Crss minimize signal distortion at 10 MHz analog bandwidth; 0.28 Ω typical R_DS(ON) preserves SNR.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053UFA-7B	20 V V_DSS, 0.35 Ω R_DS(ON) @ 4.5 V, but 1.2 V V_GS(th) max	Requires ≥2.5 V gate drive; unsuitable for 1.8 V logic interfaces	Select when higher drive voltage is available and lower R_DS(ON) is prioritized over ultra-low threshold.
AO3414	20 V V_DSS, 0.45 Ω R_DS(ON) @ 4.5 V, but SOT-23 package (2.9 mm × 1.3 mm)	16× larger footprint; 220°C/W R_θJA vs. 353°C/W - less suitable for thermally constrained layouts	Choose only if legacy SOT-23 reflow infrastructure exists and board space is not constrained.

Compared with DMN2053UFA-7B and AO3414, DMN2550UFA-7B uniquely combines 1.0 V gate threshold, 0.48 mm² footprint, and ESD protection-enabling direct 1.8 V control in ultra-thin wearable PCBs where thermal and spatial margins are simultaneously tight.

Availability

DMN2550UFA-7B is available at Aetrix Electronics and suitable for USB power switching, Li-ion battery protection, and wearable sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for DMN2550UFA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This part belongs to Diodes' Ultra-Small Signal MOSFET product line, engineered specifically for space- and power-constrained portable electronics where gate drive voltage headroom is limited and thermal dissipation is restricted by form factor.

FAQ

What is the maximum continuous drain current for DMN2550UFA-7B at 70°C ambient?

The maximum continuous drain current is 0.5 A at T_A = +70°C, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (353°C/W) and power dissipation limit (360 mW) on standard FR-4 PCB with minimum pad layout per Note 5.

Does DMN2550UFA-7B require external gate protection?

No external gate protection is required under normal operating conditions. The device integrates ESD protection rated >2 kV HBM per JESD22-A114, and its ±8 V gate-source voltage rating exceeds typical 1.8 V/2.5 V logic swing ranges. External TVS is only needed in high-noise industrial environments.

Can DMN2550UFA-7B be used in high-frequency PWM applications?

Yes-it supports PWM frequencies up to 2 MHz due to low total gate charge (0.88 nC) and fast switching times (t_D(on) = 7.1 ns, t_D(off) = 105 ns). However, layout must minimize gate loop inductance and use proper decoupling near the DFN pad to maintain waveform fidelity.

What is the recommended PCB pad layout for thermal performance?

Use the land pattern defined in Diodes' AP02001 document: 0.35 mm × 0.20 mm thermal pad with 0.15 mm solder mask opening, surrounded by three 0.25 mm × 0.25 mm solder pads for D, S, and G. Thermal vias (≥4 × 0.3 mm) under the exposed drain pad are mandatory for achieving the 353°C/W R_θJA.

DMN2550UFA-7B Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 600mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.88 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 52.5 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X2-DFN0806-3

DMN2550UFA-7B FAQ

1.How can I place an order for DMN2550UFA-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2550UFA-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2550UFA-7B reliable?

The price and inventory of DMN2550UFA-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2550UFA-7B is usually 5 days.

3.What payment methods are accepted for DMN2550UFA-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2550UFA-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2550UFA-7B?

DMN2550UFA-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2550UFA-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2550UFA-7B?

For technical support, including DMN2550UFA-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2550UFA-7B requirements.

6.How does Aetrix verify that DMN2550UFA-7B is sourced from the original manufacturer or authorized distributors?

All DMN2550UFA-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2550UFA-7B meets industry standards.

7.What is the process for return or replacement of DMN2550UFA-7B?

All DMN2550UFA-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2550UFA-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2550UFA-7B part is unused and in its original packaging.

Return procedure for DMN2550UFA-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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