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Diodes Incorporated DMN25D0UFA-7B
- Part No.:
- DMN25D0UFA-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN25D0UFA-7B.pdf
- Description:
- MOSFET N-CH 25V 240MA 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,980
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Product details
Overview
DMN25D0UFA-7B from Diodes Incorporated is a 25V N-channel enhancement-mode MOSFET in X2-DFN0806-3 package, rated for 0.32A continuous drain current at VGS = 4.5V, with RDS(on) = 4Ω, low 0.6–1.2V gate threshold, and ESD protection >6kV HBM. It serves as a compact, battery-direct-drive load switch in space-constrained portable power management circuits.
For engineers reviewing the DMN25D0UFA-7B datasheet, DMN25D0UFA-7B pinout, DMN25D0UFA-7B application, or DMN25D0UFA-7B equivalent, key selection criteria include ultra-low profile (0.4mm height), 0.48mm² footprint, AEC-Q101 qualification, gate drive compatibility with 2.7V logic, and thermal resistance of 201°C/W on standard FR-4 PCB.
Technical Context
This MOSFET employs planar silicon process optimized for low RDS(on) while preserving fast switching speed: tD(on) = 2.9ns, tD(off) = 6.6ns, and Qg = 0.36nC at VDS = 5V. Its integrated body diode supports bidirectional current flow in load-switch configurations with VSD = 0.76V at IS = 0.29A.
The device operates across –55°C to +150°C junction temperature, with RDS(on) variation tightly controlled-normalized to ≤1.6× at 150°C vs. 25°C under 4.5V gate drive. Gate leakage remains ≤100nA at VGS = 8V, ensuring stable biasing in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 25V - Maximum blocking voltage before avalanche conduction; suitable for 3.3V–12V rail switching |
| RDS(on) | 4Ω @ VGS = 4.5V, ID = 0.4A - Enables <1.3mW conduction loss at 0.32A, critical for low-power efficiency |
| VGS(th) | 0.6–1.2V - Ensures reliable turn-on from single-cell Li-ion (3.0–4.2V) or 2.7V logic without level-shifting |
| ID (continuous) | 0.32A @ TA = +25°C - Sustains typical load currents in USB peripherals, sensor modules, and LED drivers |
| Qg | 0.36nC - Minimizes gate drive energy and enables high-frequency PWM control up to ~1MHz |
| RθJA | 201°C/W - Defines thermal rise on minimal copper pad; requires layout optimization for >0.2A sustained operation |
| ESD Rating | >6kV HBM - Eliminates need for external gate protection in handheld and wearable designs |
Pinout & Package
Package: X2-DFN0806-3 - 0.8mm × 0.6mm, 0.4mm height, 3-terminal leadless plastic package with NiPdAu-plated terminals; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (body tie) | Primary current return path; electrically connected to exposed die paddle for thermal conduction |
| 2 (Gate) | Control electrode | High-impedance input requiring <100nA leakage margin; sensitive to ESD but protected by on-chip diode |
| 3 (Drain) | Main power output | Carries switched load current; connects to higher-potential rail; hosts body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.4mm height enables integration into <1.0mm-thick mobile PCB assemblies and stacked modules |
| Footprint reduction | 0.48mm² area - 16× smaller than SOT-23, freeing board space for RF or sensor co-location |
| Battery-direct gate drive | VGS(th) ≤1.2V allows direct interface with 2.7V–4.5V supply rails without auxiliary bias circuitry |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress |
| Green construction | Halogen- and antimony-free, RoHS-compliant molding compound (Br+Cl <1500ppm, Sb <1000ppm) |
Applications
| Smart Wearable Power Switch | USB-C Peripheral Load Control |
|---|---|
|
Use Scenario: Enabling/disabling Bluetooth LE sensor node power during sleep/wake cycles in fitness trackers. IC Role / Device Role / Timing Role: Low-leakage load switch controlling 3.3V system rail; activated by MCU GPIO with 2.7V logic. Use Value: Achieves <1µA off-state current (IDSS ≤1µA) and <1.3mW conduction loss at 0.25A, extending battery life by >15% over SOT-23 alternatives. |
Use Scenario: Managing VBUS power delivery to accessory ICs (e.g., USB PD controllers, level shifters) in dockable dongles. IC Role / Device Role / Timing Role: Hot-swap capable power switch with fast turn-off (tf = 2.3ns) to prevent inrush-induced bus faults. Use Value: Limits peak inrush current via controlled dV/dt; RDS(on) stability across –40°C to +85°C ensures consistent performance in varying ambient conditions. |
| Medical Patch Sensor Module | IoT Edge Node Battery Management |
|
Use Scenario: Isolating ECG front-end analog circuitry from digital subsystem during measurement phases to reduce noise coupling. IC Role / Device Role / Timing Role: Signal-path isolation switch with <0.76V body diode forward drop, enabling reverse-current blocking without external diode. Use Value: Eliminates discrete Schottky diode, saving 0.5mm² board area and reducing BOM count while maintaining <100nA gate leakage for stable biasing. |
Use Scenario: Controlling power to LoRaWAN transceiver during transmit bursts in solar-charged environmental monitors. IC Role / Device Role / Timing Role: High-efficiency pulsed load switch handling 1.2A peak (IDM) for 100µs durations without thermal runaway. Use Value: SOA compliance up to 10ms pulses at 150°C junction temperature enables robust burst-mode operation without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2056UFA-7B | 20V VDSS, RDS(on) = 2.8Ω @ 4.5V, same X2-DFN0806-3 package | Lower voltage rating limits use to ≤15V systems; better RDS(on) improves efficiency at sub-20V rails | Select when operating below 20V and lower conduction loss is prioritized over 25V margin |
| AO3414 | SOT-23 package, VDSS = 20V, RDS(on) = 5.5Ω @ 4.5V, no AEC-Q101 qualification | Larger footprint (2.9mm²), higher thermal resistance (338°C/W), unqualified for automotive environments | Choose only for cost-sensitive, non-automotive, non-space-constrained prototypes where board area is not constrained |
Compared with DMN25D0UFA-7B, DMN2056UFA-7B offers lower on-resistance at reduced voltage headroom, while AO3414 trades miniaturization and reliability for legacy package familiarity and lower unit cost-neither matches the 25V/AEC-Q101/0.4mm-height combination of the original.
Availability
DMN25D0UFA-7B is available at Aetrix Electronics and suitable for portable medical devices, USB-C accessories, smart wearables, and IoT edge nodes requiring stable component supply with AEC-Q101 reliability and ultra-compact packaging.
Supply support for DMN25D0UFA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.
The DMN25D0UFA-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained battery-powered applications demanding low gate-threshold operation, AEC-Q101 qualification, and minimal thermal resistance in sub-1mm profiles.
FAQ
What is the maximum continuous drain current for DMN25D0UFA-7B at 70°C ambient?
The DMN25D0UFA-7B supports 0.25A continuous drain current at TA = +70°C with 2oz copper on a 1" × 1" FR-4 PCB (Note 6). This derating reflects thermal limitations-not electrical failure-and assumes proper solder joint integrity and minimum recommended pad layout per AP02001.
Does DMN25D0UFA-7B include an integrated body diode, and what is its forward voltage?
Yes, it features a monolithic body diode with VSD = 0.76V (typical) at IS = 0.29A and TA = +25°C. The diode's forward voltage increases to ~1.2V at 0.29A and 150°C, enabling reverse-current blocking in bidirectional power paths without external components.
Can DMN25D0UFA-7B be driven directly from a 2.7V microcontroller GPIO?
Yes-its VGS(th) range of 0.6–1.2V guarantees turn-on with 2.7V logic. At VGS = 2.7V, RDS(on) is 5Ω (ID = 0.2A), delivering sufficient performance for ≤200mA loads while eliminating level-shifters in ultra-low-power designs.
Is the X2-DFN0806-3 package compatible with standard reflow profiles?
Yes-the package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 1 and supports standard SnPb and lead-free reflow profiles. Its NiPdAu finish ensures solderability per MIL-STD-202, Method 208, and the 0.4mm height avoids tombstoning on fine-pitch layouts.
DMN25D0UFA-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.36 nC @ 4.5 V
- Vgs (Max):
- 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27.9 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN0806-3
DMN25D0UFA-7B FAQ
1.How can I place an order for DMN25D0UFA-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN25D0UFA-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN25D0UFA-7B reliable?
The price and inventory of DMN25D0UFA-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN25D0UFA-7B is usually 5 days.
3.What payment methods are accepted for DMN25D0UFA-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN25D0UFA-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN25D0UFA-7B?
DMN25D0UFA-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN25D0UFA-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN25D0UFA-7B?
For technical support, including DMN25D0UFA-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN25D0UFA-7B requirements.
6.How does Aetrix verify that DMN25D0UFA-7B is sourced from the original manufacturer or authorized distributors?
All DMN25D0UFA-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN25D0UFA-7B meets industry standards.
7.What is the process for return or replacement of DMN25D0UFA-7B?
All DMN25D0UFA-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN25D0UFA-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN25D0UFA-7B part is unused and in its original packaging.
Return procedure for DMN25D0UFA-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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