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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN26D0UFB4-7

Name: DMN26D0UFB4-7
Brand: Diodes Incorporated
SKU: DMN26D0UFB4-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN26D0UFB4-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: DMN26D0UFB4-7.pdf

Description:: MOSFET N-CH 20V 230MA 3DFN

Quantity:: RFQ Add To RFQ list

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Inventory:6,909

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Product details

Overview

DMN26D0UFB4-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for ultra-low gate threshold voltage (0.6–0.9 V) and low on-resistance (3.0 Ω @ 4.5 V, 6.0 Ω @ 1.8 V), enabling efficient switching in space-constrained DC-DC converters and power management functions at 20 V drain-source rating and 240 mA continuous drain current.

For engineers reviewing the DMN26D0UFB4-7 datasheet, DMN26D0UFB4-7 pinout, DMN26D0UFB4-7 application, or DMN26D0UFB4-7 equivalent, key selection criteria include its X2-DFN1006-3 ultra-small package (1.0 × 0.6 mm, 0.4 mm max height), JEDEC-qualified reliability, ESD-protected gate, and sub-1 V_GS(th) enabling direct drive from low-voltage logic such as 1.8 V GPIOs.

Technical Context

This MOSFET employs a planar silicon process with optimized channel geometry to achieve low R_DS(on) while maintaining fast switching (t_D(ON) = 3.8 ns, t_F = 15.2 ns) and low input capacitance (C_iss = 14.1 pF typ). Its gate threshold voltage distribution (0.6–0.9 V) ensures reliable turn-on across temperature and process variation.

The device integrates an internal source-drain diode (V_SD = 0.5–1.4 V @ 115 mA) and features NiPdAu-plated terminals for robust solderability. Thermal resistance R_θJA is 357 °C/W on FR-4 with minimum pad layout, supporting operation from –55 °C to +150 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage for 3.3 V/5 V rail-level power switches
R_DS(on)	3.0 Ω @ V_GS = 4.5 V - Enables <100 mW conduction loss at 180 mA load
V_GS(th)	0.6–0.9 V - Guarantees full enhancement with 1.8 V logic without level-shifting
I_D (continuous)	240 mA @ T_A = 25 °C - Sufficient for low-power PMIC load switches and bias circuits
C_iss	14.1 pF typ - Minimizes gate drive power and improves high-frequency efficiency
P_D	350 mW @ T_A = 25 °C - Supports operation on standard PCB without thermal vias
Package	X2-DFN1006-3 - 1.0 × 0.6 mm footprint, 0.4 mm max height for ultra-thin portable designs

Pinout & Package

Package: X2-DFN1006-3, 3-terminal ultra-thin plastic DFN with exposed drain pad (bottom view); case material is UL 94V-0 green molding compound; moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Connected to ground or low-side return path; electrically tied to exposed drain pad via internal substrate
2 (Gate)	Control input	ESD-protected gate with ±10 V max rating; driven directly by 1.8 V/3.3 V logic
3 (Drain)	Power output	Exposed metal pad on bottom surface; primary current path and thermal conduction path to PCB

Key Features

Feature	Design Value
Ultra-low V_GS(th)	0.6–0.9 V range ensures guaranteed turn-on with 1.8 V microcontroller I/O
Low R_DS(on) at 1.8 V	6.0 Ω @ V_GS = 1.8 V enables usable on-state performance without higher gate drive
ESD-protected gate	HBM rating ≥2 kV (per JEDEC JESD22-A114) eliminates need for external gate protection
Green, lead-free construction	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); RoHS 3 compliant
JEDEC-qualified reliability	Qualified to AEC-Q101 stress test standards for high-reliability industrial use

Applications

Battery-Powered Sensor Node

USB-C Power Delivery Load Switch

Use Scenario: Low-duty-cycle IoT sensor node powered by coin cell or single Li-ion cell requiring minimal quiescent current and logic-level control.

IC Role / Device Role / Timing Role: N-channel load switch controlling power to RF transceiver and analog front-end during sleep/wake cycles.

Use Value: Sub-1 V_GS(th) enables direct MCU GPIO control; 500 nA I_DSS minimizes battery leakage over multi-year deployment.

Use Scenario: USB-C port power path management where 5 V bus must be switched under 3.3 V system controller supervision.

IC Role / Device Role / Timing Role: High-side or low-side power switch isolating downstream VBUS loads during fault or hot-plug events.

Use Value: 20 V V_DSS safely handles USB-C VBUS tolerance; 3.0 Ω R_DS(on) limits voltage drop to <750 mV at 250 mA load.

Wearable Device Power Sequencing

Low-Voltage FPGA Configuration Circuit

Use Scenario: Multi-rail wearable platform (1.2 V core, 1.8 V I/O, 3.3 V sensors) requiring precise power-up sequencing and isolation.

IC Role / Device Role / Timing Role: Discrete power switch enabling controlled enable/disable of individual supply domains under firmware control.

Use Value: X2-DFN1006-3 footprint fits tight board areas; 0.4 mm height avoids interference with flex connectors and batteries.

Use Scenario: FPGA configuration circuit where 1.8 V configuration voltage must be gated before main core power is applied.

IC Role / Device Role / Timing Role: Logic-level-controlled switch ensuring safe power sequencing between configuration and operational states.

Use Value: Guaranteed turn-on at 1.8 V V_GS eliminates need for dedicated level shifter; low C_iss prevents timing skew in critical reset paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 2.0 Ω @ 4.5 V; V_GS(th) = 0.5–0.8 V; same X2-DFN1006-3 package	Slightly lower R_DS(on) and threshold, but higher C_iss (18.5 pF)	Preferred when lowest conduction loss is critical and gate drive strength permits higher C_iss.
AO3400A	R_DS(on) = 2.7 Ω @ 4.5 V; V_GS(th) = 0.7–1.4 V; SOT-23 package (larger, 2.9 × 1.3 mm)	Higher V_GS(th) upper limit increases risk of incomplete turn-on at 1.8 V; larger footprint	Acceptable only if board space allows SOT-23 and system tolerates wider V_GS(th) distribution.

Compared with DMN26D0UFB4-7, DMN2020LFG-7 offers marginally better conduction efficiency but demands stronger gate drive, while AO3400A trades compactness and guaranteed 1.8 V compatibility for legacy package familiarity and slightly higher R_DS(on).

Availability

DMN26D0UFB4-7 is available at Aetrix Electronics and suitable for battery-powered sensor nodes, USB-C power delivery load switching, and wearable device power sequencing requiring stable component supply, JEDEC-qualified reliability, and ultra-small footprint.

Supply support for DMN26D0UFB4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMN26D0UFB4-7 belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for ultra-low-voltage gate drive compatibility and minimal PCB area in portable and energy-sensitive applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN26D0UFB4-7 supports 190 mA continuous drain current at T_A = +70°C when V_GS = 4.5 V, and 140 mA when V_GS = 1.8 V. This derating reflects thermal limitations of the X2-DFN1006-3 package on standard FR-4 with minimum copper area.

Is the exposed drain pad electrically connected to any pin?

Yes - the exposed metal pad on the bottom of the X2-DFN1006-3 package is the Drain terminal (Pin 3) and must be soldered to a PCB copper pour for both electrical connection and thermal dissipation. It is not internally connected to Source or Gate.

Does this MOSFET require external gate resistors for typical 1.8 V GPIO switching?

No external gate resistor is required for basic on/off control from 1.8 V GPIOs due to the device's low C_iss (14.1 pF typ) and ESD-protected gate. However, a small series resistor (10–47 Ω) is recommended if driving at >1 MHz or in noise-sensitive environments to damp ringing.

How does the R_DS(on) change over temperature?

R_DS(on) increases approximately 1.8× from 25°C to 125°C ambient. At V_GS = 4.5 V and I_D = 500 mA, normalized R_DS(on) rises from 1.0 to ~1.75; absolute value shifts from 3.0 Ω to ~5.3 Ω. This positive tempco aids current sharing in parallel configurations.

DMN26D0UFB4-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 14.1 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 350mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X2-DFN1006-3

DMN26D0UFB4-7 FAQ

1.How can I place an order for DMN26D0UFB4-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN26D0UFB4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN26D0UFB4-7 reliable?

The price and inventory of DMN26D0UFB4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN26D0UFB4-7 is usually 5 days.

3.What payment methods are accepted for DMN26D0UFB4-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN26D0UFB4-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN26D0UFB4-7?

DMN26D0UFB4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN26D0UFB4-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN26D0UFB4-7?

For technical support, including DMN26D0UFB4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN26D0UFB4-7 requirements.

6.How does Aetrix verify that DMN26D0UFB4-7 is sourced from the original manufacturer or authorized distributors?

All DMN26D0UFB4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN26D0UFB4-7 meets industry standards.

7.What is the process for return or replacement of DMN26D0UFB4-7?

All DMN26D0UFB4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN26D0UFB4-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN26D0UFB4-7 part is unused and in its original packaging.

Return procedure for DMN26D0UFB4-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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