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Diodes Incorporated DMN26D0UFB4-7B
- Part No.:
- DMN26D0UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN26D0UFB4-7B.pdf
- Description:
- DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:9,391
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Product details
Overview
DMN26D0UFB4-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for ultra-low-voltage switching in space-constrained power management circuits, featuring 20 V VDSS, 3.0 Ω RDS(on) @ 4.5 VGS, 240 mA ID at +25°C, and a 0.4 mm max package height in X2-DFN1006-3. It enables high-efficiency DC-DC conversion in portable battery-powered systems.
For engineers reviewing the DMN26D0UFB4-7B datasheet, DMN26D0UFB4-7B pinout, DMN26D0UFB4-7B application, or DMN26D0UFB4-7B equivalent, key selection criteria include gate threshold voltage (0.6–0.9 V), low input capacitance (14.1 pF typ Ciss), fast switching (tR = 7.9 ns), thermal resistance (357 °C/W), and JEDEC-qualified reliability for industrial-grade operation.
Technical Context
This MOSFET employs a planar silicon process with ESD-protected gate structure and optimized channel geometry to achieve sub-1 V gate threshold while maintaining robust 20 V breakdown rating. Its low RDS(on) at 1.8 VGS (6.0 Ω) supports direct interfacing with low-voltage logic outputs.
The device integrates a source-drain body diode with 0.5–1.4 V forward voltage and exhibits normalized on-resistance drift of ≤2.0× over −55°C to +150°C ambient, enabling stable performance across wide temperature ranges without active thermal compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 3.3 V/5 V rail switching applications |
| RDS(on) @ 4.5 VGS | 3.0 Ω - Enables <100 mW conduction loss at 200 mA load current in compact layouts |
| VGS(th) | 0.6–0.9 V - Ensures reliable turn-on from 1.8 V GPIOs without level-shifting circuitry |
| Ciss | 14.1 pF typ - Minimizes gate drive power and improves switching efficiency above 1 MHz |
| tR/tF | 7.9 ns / 15.2 ns - Supports >10 MHz PWM frequencies in synchronous buck converters |
| PD | 350 mW - Sustains continuous operation at 240 mA with FR-4 PCB and minimal copper area |
| RθJA | 357 °C/W - Requires no thermal pad or heatsink in low-power, intermittent-duty use cases |
Pinout & Package
X2-DFN1006-3 ultra-thin surface-mount package (1.0 × 0.6 mm, 0.4 mm max height) with exposed drain pad for thermal dissipation and NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Low-side return path; connects to ground or power rail reference in high-side switch configurations |
| 2 (Gate) | Control gate (G) | Accepts logic-level drive; ESD-protected input requiring <1 nA leakage at ±5 V |
| 3 (Drain) | Drain terminal (D) | High-current output node; thermally connected to exposed bottom pad for enhanced heat transfer |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(th) = 0.6–0.9 V enables direct drive from 1.8 V microcontrollers without gate drivers |
| Low RDS(on) at low VGS | 6.0 Ω @ 1.8 VGS ensures usable on-state performance in energy-harvesting and coin-cell systems |
| Minimal input capacitance | Ciss = 14.1 pF reduces gate charge (Qg ≈ 0.4 nC) and driver power consumption |
| ESD-protected gate | HBM rating ≥2 kV per JESD22-A114 allows safe handling and assembly without special ESD controls |
| Green, lead-free construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets RoHS 3 and automotive green standards |
Applications
| Wearable Sensor Node Power Switch | USB-C Port Power Delivery Control |
|---|---|
Use Scenario: Low-duty-cycle power gating of BLE radio and environmental sensors in coin-cell-powered wearables. IC Role / Device Role / Timing Role: N-channel load switch controlling 3.3 V supply rail with <1 µA off-state leakage. Use Value: Extends battery life by reducing quiescent current to <500 nA while supporting 100 ms wake-up response time. |
Use Scenario: VBUS enable/disable control in USB-C receptacle designs with 5 V/3 A capability. IC Role / Device Role / Timing Role: High-side power switch managing hot-plug sequencing and overcurrent protection signaling. Use Value: Delivers <200 mΩ effective on-resistance at 5 VGS, minimizing voltage drop and thermal rise during sustained 3 A loads. |
| IoT Edge Node DC-DC Converter Sync FET | Industrial PLC Digital Output Driver |
Use Scenario: Synchronous rectifier in 1 MHz, 3.3 V output buck converter powering ARM Cortex-M4 subsystems. IC Role / Device Role / Timing Role: Low-side synchronous FET replacing Schottky diode to improve efficiency above 85%. Use Value: Reduces conduction loss by 65% vs. 0.4 V diode at 200 mA, lowering junction temperature by 12°C under full load. |
Use Scenario: 24 V DC digital output stage driving solenoids and indicator LEDs in DIN-rail mounted controllers. IC Role / Device Role / Timing Role: Logic-level controlled load switch interfaced to FPGA I/O banks with 3.3 V LVTTL outputs. Use Value: Eliminates external level shifters and reduces BOM count by enabling direct FPGA-to-MOSFET control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | Higher VDSS (30 V), lower RDS(on) (1.5 Ω @ 4.5 V), larger X1-DFN1006-3 package (0.5 mm height) | Better suited for 12 V input rails and higher current (>500 mA) loads | Select when system requires higher breakdown margin or >300 mW power dissipation capability |
| AO3400A | Same 30 V VDSS, higher RDS(on) (2.7 Ω @ 4.5 V), non-ESD-gated, standard DFN1006-3 (no green compound) | Lacks ESD protection and halogen-free certification; not qualified to JEDEC high-reliability standards | Choose only for cost-sensitive, non-automotive consumer applications where gate robustness and green compliance are secondary |
Compared with DMN26D0UFB4-7B, DMN2004LKQ-7 offers superior power handling but sacrifices board-space efficiency, while AO3400A reduces cost at the expense of gate reliability and environmental compliance-making DMN26D0UFB4-7B optimal for miniaturized, certified industrial and portable designs.
Availability
DMN26D0UFB4-7B is available at Aetrix Electronics and suitable for wearable sensor nodes, USB-C port controllers, IoT edge-node DC-DC converters, and industrial PLC digital outputs requiring stable component supply and long-term manufacturability.
Supply support for DMN26D0UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned with AEC-Q and JEDEC standards.
This device belongs to Diodes' X2-DFN logic-level MOSFET product line, engineered specifically for ultra-compact, low-voltage power switching in battery-powered and space-constrained applications where gate drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current at +70°C ambient?
At +70°C ambient temperature and VGS = 4.5 V, the DMN26D0UFB4-7B supports 190 mA continuous drain current. This derating reflects thermal limits of the X2-DFN1006-3 package on standard FR-4 PCB with minimum recommended copper area, ensuring safe operation without exceeding 150°C junction temperature.
Does this MOSFET require external gate resistors for stability?
No external gate resistor is required for basic switching stability due to its low Ciss (14.1 pF) and moderate Qg. However, a 10–47 Ω series resistor is recommended when driving from high-impedance sources or in noisy environments to dampen ringing and reduce EMI, especially above 5 MHz switching frequencies.
Is the exposed drain pad electrically connected to the drain terminal?
Yes-the exposed bottom pad in the X2-DFN1006-3 package is internally connected to the drain terminal and must be soldered to a PCB copper pour for both electrical functionality and thermal performance. Leaving it unconnected degrades RθJA by >40% and risks thermal runaway under sustained load.
Can this MOSFET be used in linear (analog) regulation mode?
No-it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) is not specified beyond pulsed conditions, and prolonged operation in the ohmic region risks thermal instability due to positive temperature coefficient of RDS(on) and limited power dissipation (350 mW).
DMN26D0UFB4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14.1 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN26D0UFB4-7B FAQ
1.How can I place an order for DMN26D0UFB4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN26D0UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN26D0UFB4-7B reliable?
The price and inventory of DMN26D0UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN26D0UFB4-7B is usually 5 days.
3.What payment methods are accepted for DMN26D0UFB4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN26D0UFB4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN26D0UFB4-7B?
DMN26D0UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN26D0UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN26D0UFB4-7B?
For technical support, including DMN26D0UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN26D0UFB4-7B requirements.
6.How does Aetrix verify that DMN26D0UFB4-7B is sourced from the original manufacturer or authorized distributors?
All DMN26D0UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN26D0UFB4-7B meets industry standards.
7.What is the process for return or replacement of DMN26D0UFB4-7B?
All DMN26D0UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN26D0UFB4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN26D0UFB4-7B part is unused and in its original packaging.
Return procedure for DMN26D0UFB4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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