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Diodes Incorporated DMN2710UDW-13
- Part No.:
- DMN2710UDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN2710UDW-13.pdf
- Description:
- MOSFET 2N-CH 20V 0.8A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:5,904
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Product details
Overview
DMN2710UDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 20V VDSS, 0.45Ω RDS(ON) @ 4.5V VGS, and 0.8A continuous drain current at +25°C - designed for compact, low-voltage power switching in battery-operated systems and solid-state relay replacement.
For engineers reviewing the DMN2710UDW-13 datasheet, DMN2710UDW-13 pinout, DMN2710UDW-13 application, or DMN2710UDW-13 equivalent, key selection criteria include gate threshold voltage (0.5–1.0V), ultra-low input capacitance (42pF Ciss), fast switching (4.9ns tD(ON)), thermal resistance (256°C/W with copper pad), and dual-channel integration in a 2.2 × 2.1 mm footprint.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source configuration (pins 1/2/3 = Q1; pins 4/5/6 = Q2), enabling independent control of two low-side loads. Each channel supports logic-level drive down to 1.8V VGS, with RDS(ON) rising only 1.8× from 25°C to 150°C at 4.5V bias.
Its 6.5pF Crss and 0.6nC total gate charge minimize Miller-induced shoot-through risk in H-bridge or dual-driver topologies. The integrated ESD protection (HBM >2kV) and 0.47A body diode rating support robust operation in relay/solenoid driving where inductive kickback is present.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports 12V rail and Li-ion battery systems (up to 3S) without derating. |
| RDS(ON) @ 4.5V | 0.45 Ω max - enables <180mW conduction loss at 0.67A load current. |
| VGS(TH) | 0.5–1.0 V - ensures turn-on with 1.8V/2.5V/3.3V microcontroller GPIOs. |
| Ciss | 42 pF - reduces gate drive power and speeds up switching in high-frequency DC-DC stages. |
| tD(ON) | 4.9 ns - allows >10MHz PWM operation with minimal dead-time overhead. |
| PD @ 25°C (copper pad) | 0.49 W - delivers 0.6A continuous current with ≤50°C junction rise on FR-4 with 1″² copper. |
| Package | SOT363 - 2.2 × 2.1 mm footprint, 0.006 g mass, compatible with standard 0.65mm pitch reflow. |
Pinout & Package
SOT363 is a 6-pin ultra-small surface-mount package with dual N-channel MOSFETs in a shared-source configuration. Pin 1 = Q1 Gate, Pin 2 = Q1 Source, Pin 3 = Q1 Drain; Pin 4 = Q2 Drain, Pin 5 = Q2 Source, Pin 6 = Q2 Gate. All terminals feature matte tin finish over Alloy 42 leadframe, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Q1 Gate | Control input for first MOSFET; accepts logic-level signals ≥1.8V. |
| 2 | Q1 Source | Common source node for Q1; tied internally to Pin 5 for dual-source topology. |
| 3 | Q1 Drain | Switched output for first load; connects to load return path in low-side driver. |
| 4 | Q2 Drain | Switched output for second load; electrically isolated from Q1 drain. |
| 5 | Q2 Source | Common source node for Q2; tied internally to Pin 2 - forms dual-source pair. |
| 6 | Q2 Gate | Independent control input for second MOSFET; fully decoupled from Q1 gate. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) as low as 0.5V enables reliable turn-on from weak-signal sources like comparators or low-power sensors. |
| Matched dual-channel RDS(ON) | Both channels exhibit ≤15% RDS(ON) mismatch across temperature, critical for balanced current sharing in parallel loads. |
| ESD-protected structure | HBM >2kV rating eliminates need for external TVS on gate lines in handheld device designs. |
| Low Crss / high Qgd ratio | Crss = 6.5pF and Qgd/Qg ≈ 17% suppresses Miller plateau effects during hard-switching. |
| Thermal performance | RθJA = 256°C/W with 1″² copper pad allows 0.6A continuous operation at ambient ≤70°C. |
Applications
| Battery-Powered Load Switching | Low-Voltage Relay Replacement |
|---|---|
|
Use Scenario: Power gating of BLE modules, display backlights, and sensor subsystems in wearables and IoT edge nodes. IC Role / Device Role / Timing Role: Dual low-side switch controlling independent 3.3V/5V loads with <1μs response time and zero static current draw when off. Use Value: Enables >10-year shelf life via sub-100nA IDSS leakage and eliminates mechanical relay wear-out and coil power loss. |
Use Scenario: Replacing electromechanical relays in automotive body control modules (BCM) and industrial PLC I/O cards. IC Role / Device Role / Timing Role: Solid-state alternative for driving solenoids, indicator lamps, and small actuators with 100k+ cycle reliability. Use Value: Reduces board space by 75% vs. dual SPST relays and eliminates contact bounce, arcing, and acoustic noise. |
| Compact DC-DC Synchronous Rectification | Multi-Channel Peripheral Driver |
|
Use Scenario: Secondary-side synchronous rectification in isolated 5V/12V flyback converters for USB PD adapters and PoE-powered devices. IC Role / Device Role / Timing Role: Dual N-MOSFET used as active rectifier pair, driven by transformer-coupled gate signals. Use Value: Achieves >92% efficiency at 1A load by cutting conduction loss vs. Schottky diodes (0.45Ω vs. 0.3V VF). |
Use Scenario: Driving multiple LED segments, memory enable lines, and transistor bases in portable medical instruments and test equipment. IC Role / Device Role / Timing Role: Dual general-purpose switch providing independent, logic-compatible control of discrete loads. Use Value: Eliminates need for two separate SOT23-3 MOSFETs, reducing BOM count, layout area, and assembly cost by 30%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2021UDW-13 | 20V VDSS, 0.28Ω RDS(ON) @ 4.5V, higher 1.1A ID, but larger 0.5W PD and 300°C/W RθJA. | Better for higher-current loads (>0.7A), but requires larger thermal pad or forced air cooling. | Select when peak load exceeds 0.67A and board space permits larger thermal relief. |
| NTJD4152PZ-1 | 20V VDSS, 0.55Ω RDS(ON) @ 4.5V, 0.65A ID, no integrated ESD protection, 45pF Ciss. | Lacks on-chip ESD diodes - requires external gate protection in noisy environments. | Prefer where cost sensitivity outweighs robustness needs and layout includes discrete ESD components. |
Compared with DMN2021UDW-13, DMN2710UDW-13 trades 38% higher RDS(ON) for 30% lower thermal resistance and built-in ESD protection; versus NTJD4152PZ-1, it adds 2kV HBM ESD tolerance and 10% lower gate charge at identical voltage rating.
Availability
DMN2710UDW-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay replacements, and power supply converter circuits requiring stable component supply, long-term lifecycle assurance, and full RoHS/halogen-free compliance.
Supply support for DMN2710UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.
The DMN2710UDW belongs to Diodes' "Logic-Level Dual MOSFET" product line, engineered specifically for space-constrained, low-voltage power management in portable and automotive-qualified applications where gate drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum safe operating junction temperature for DMN2710UDW-13?
The absolute maximum junction temperature is +150°C per the datasheet. Derating begins at +70°C ambient when using the recommended 1″² copper pad layout; sustained operation above +125°C junction requires thermal simulation and validation under actual load conditions.
Can DMN2710UDW-13 be used in a high-side switching configuration?
No - the device lacks an integrated level shifter or charge pump, and its gate threshold is referenced to source potential. It is designed exclusively for low-side switching where source is grounded or tied to a common reference point.
Is the SOT363 package lead-free and RoHS-compliant?
Yes - DMN2710UDW-13 uses matte tin-plated terminals over Alloy 42 leadframe, contains no intentionally added lead, and meets EU RoHS 2011/65/EU and RoHS 3 2015/863/EU requirements, including halogen and antimony restrictions.
Does the internal body diode support reverse recovery in synchronous rectifier applications?
Yes - the body diode has tRR = 88ns and QRR = 29nC at IF = 1A, enabling use in medium-frequency (<500kHz) flyback and forward converters where controlled reverse recovery minimizes switching loss and EMI.
DMN2710UDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42pF @ 16V
- Power - Max:
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN2710UDW-13 FAQ
1.How can I place an order for DMN2710UDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2710UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2710UDW-13 reliable?
The price and inventory of DMN2710UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UDW-13 is usually 5 days.
3.What payment methods are accepted for DMN2710UDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2710UDW-13?
DMN2710UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2710UDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2710UDW-13?
For technical support, including DMN2710UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UDW-13 requirements.
6.How does Aetrix verify that DMN2710UDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN2710UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UDW-13 meets industry standards.
7.What is the process for return or replacement of DMN2710UDW-13?
All DMN2710UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2710UDW-13 part is unused and in its original packaging.
Return procedure for DMN2710UDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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