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Diodes Incorporated DMN2710UFB-7
- Part No.:
- DMN2710UFB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-UFDFN
- Datasheet:
-
DMN2710UFB-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V X1-DFN1006-
- Quantity:
- Payment:
- Shipping:
Inventory:5,244
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Product details
Overview
DMN2710UFB from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 1.0 mm × 0.6 mm X1-DFN1006-3 package, rated for 20 V VDSS, 0.45 Ω RDS(ON) @ 4.5 V VGS, and 1.3 A continuous drain current at +25°C. It delivers low gate threshold (0.5–1.0 V), fast switching (tR = 19 ns), and ESD-protected gate-optimized for compact, high-efficiency power switches in portable electronics.
For engineers reviewing the DMN2710UFB datasheet, DMN2710UFB pinout, DMN2710UFB application, or DMN2710UFB equivalent, key selection criteria include its ultra-small footprint (0.6 mm²), low-voltage gate drive compatibility (down to 1.8 V), thermal resistance (RθJA = 96 °C/W with thermal vias), and body diode forward voltage (0.7–1.2 V @ 150 mA).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance via minimized gate charge (Qg = 0.6 nC) and low output capacitance (Coss = 13 pF). Its gate threshold voltage range (0.5–1.0 V) enables direct interfacing with 1.8 V and 2.5 V logic outputs without level shifting.
The integrated ESD protection diode on the gate terminal meets HBM ≥2 kV, and the device's DFN package features NiPdAu-plated terminals for reliable solderability. Thermal performance is validated under two PCB conditions: standard FR-4 (RθJA = 174 °C/W) and enhanced layout with thermal vias (RθJA = 96 °C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage; suitable for single-cell Li-ion (≤4.2 V) and 5 V rail switching with margin. |
| RDS(ON) | 0.45 Ω @ VGS = 4.5 V - Enables <100 mW conduction loss at 600 mA, critical for battery runtime in space-constrained loads. |
| VGS(TH) | 0.5–1.0 V - Ensures turn-on with low-voltage microcontrollers (e.g., ARM Cortex-M0+ I/O) without gate driver circuitry. |
| Qg | 0.6 nC - Reduces gate drive power and switching transition time, supporting >1 MHz PWM in DC-DC converters. |
| tR/tF | 19 ns / 65 ns - Minimizes switching losses in high-frequency load switches and synchronous rectifiers. |
| RθJA | 96 °C/W (with thermal vias) - Allows 1.3 W power dissipation at ≤70°C ambient rise, enabling use in sealed handheld enclosures. |
| VSD | 0.7–1.2 V @ IS = 150 mA - Defines reverse recovery behavior in buck converter freewheeling paths and back-to-back switch configurations. |
Pinout & Package
Package: X1-DFN1006-3 (1.0 mm × 0.6 mm, 0.4 mm height), 3-terminal leadless plastic package with exposed drain pad for thermal conduction. Terminals are plated with NiPdAu over copper leadframe per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connected to ground or low-side return path; electrically tied to internal substrate. |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input controlling channel conduction; protected by integrated ESD diode to source. |
| Pin 3 (Drain) | Power output terminal (D) | Exposed metal pad on bottom surface; primary heat sink interface and high-current path to load or supply rail. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-compact footprint | 0.6 mm² area - saves >92% board space vs. SOT-23, enabling dense multi-rail PMIC layouts in wearables. |
| Low-voltage gate drive | VGS(TH) down to 0.5 V - supports direct control from 1.8 V GPIOs, eliminating level shifters in IoT sensor nodes. |
| Fast switching with low Qg | Qg = 0.6 nC, tR = 19 ns - reduces dynamic losses in 2–5 MHz buck converters used in USB-C PD power stages. |
| ESD-protected gate | HBM ≥2 kV - eliminates need for external gate protection in handheld consumer assemblies subject to handling discharge. |
| Green, RoHS-compliant construction | Halogen- and antimony-free, <900 ppm Br/Cl - satisfies strict environmental compliance for EU medical and automotive sub-tier suppliers. |
Applications
| Smartphone Power Management | Wireless Earbud Charging Case |
|---|---|
Use Scenario: Load switching for camera flash LED and auxiliary sensors during sleep mode. IC Role / Device Role / Timing Role: Low-side power switch enabling precise on/off control of 5 V peripherals with minimal quiescent current. Use Value: 0.45 Ω RDS(ON) limits voltage drop to <300 mV at 600 mA, preserving battery headroom; 0.6 mm² footprint fits within tight camera module keep-out zones. | Use Scenario: Battery protection FET isolating Li-ion cell from charging circuit during overvoltage fault. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage cutoff switch controlled by fuel gauge IC GPIO. Use Value: 0.5 V VGS(TH) ensures reliable turn-on from 1.8 V fuel gauge outputs; ESD protection prevents latch-up during hot-plug USB insertion. |
| Bluetooth Tracker Beacon | Portable Medical Glucose Monitor |
Use Scenario: Enabling/disabling BLE radio subsystem to extend coin-cell battery life between transmissions. IC Role / Device Role / Timing Role: High-side or low-side enable switch for 3.3 V RF section, synchronized to MCU sleep/wake cycles. Use Value: 19 ns rise time allows clean power gating with no RF carrier leakage during transitions; 0.001 g weight avoids impact on wearable form factor. | Use Scenario: Isolating glucose sensor analog front-end from main processor during measurement acquisition. IC Role / Device Role / Timing Role: Precision analog power switch minimizing signal path noise and offset drift. Use Value: Low RDS(ON) temperature coefficient (<±0.2%/°C) ensures stable sensor bias across -20°C to +50°C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AO3400A | RDS(ON) = 0.028 Ω @ 10 V (higher drive voltage required); larger SOT-23 package (2.9 mm²) | Better conduction efficiency above 5 V rails but incompatible with 1.8 V logic; requires more PCB area | Select when system uses 5 V GPIO and prioritizes RDS(ON) over size. |
| DMN2004LKB-7 | RDS(ON) = 0.12 Ω @ 4.5 V; same X1-DFN1006-3 package but higher ID rating (2.5 A) | Higher current capability suits 2 A load switches but exhibits 2× higher Qg (1.2 nC), slowing switching | Select when peak load exceeds 1.3 A and switching frequency <500 kHz. |
Compared with AO3400A and DMN2004LKB-7, DMN2710UFB uniquely balances ultra-miniaturization, 1.8 V logic compatibility, and sub-1 nC gate charge-making it optimal for space- and voltage-constrained battery-powered edge devices where switching speed and board area are critical.
Availability
DMN2710UFB is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud charging cases, Bluetooth tracker beacons, and portable medical glucose monitors requiring stable component supply across long-lifecycle consumer programs.
Supply support for DMN2710UFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMN2710UFB belongs to Diodes' Ultra-Small Signal MOSFET product line, engineered specifically for miniaturized battery-powered systems where PCB area, low-voltage operation, and thermal efficiency are design-critical constraints.
FAQ
What is the maximum continuous drain current for DMN2710UFB at +70°C ambient?
The DMN2710UFB supports 1.1 A continuous drain current at +70°C ambient temperature under standard FR-4 PCB conditions (2 oz copper, minimum pad layout). This derating reflects thermal limitations due to its 174 °C/W junction-to-ambient resistance without thermal vias.
Does DMN2710UFB require external gate resistors for ESD protection?
No. The DMN2710UFB integrates an ESD protection diode between gate and source, rated to ≥2 kV HBM. External gate resistors are unnecessary for ESD robustness but may still be used for switching speed control or ringing suppression in high-dI/dt layouts.
Can DMN2710UFB be used in a high-side configuration?
Yes, but only with appropriate gate drive voltage exceeding VDS + VGS(TH). Since its VGS(TH) is up to 1.0 V and VDSS is 20 V, a floating gate driver capable of delivering ≥21 V relative to the source is required-making low-side switching the typical and recommended configuration.
What is the recommended PCB pad layout for optimal thermal performance?
For best thermal performance, use the manufacturer-recommended X1-DFN1006-3 pad layout with thermal vias connecting the exposed drain pad to inner-layer or backside copper planes. Diodes specifies a 1-inch square copper plate on the bottom layer with 2 oz copper and multiple vias to achieve RθJA = 96 °C/W.
DMN2710UFB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 720mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
DMN2710UFB-7 FAQ
1.How can I place an order for DMN2710UFB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2710UFB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2710UFB-7 reliable?
The price and inventory of DMN2710UFB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UFB-7 is usually 5 days.
3.What payment methods are accepted for DMN2710UFB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UFB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2710UFB-7?
DMN2710UFB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2710UFB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2710UFB-7?
For technical support, including DMN2710UFB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UFB-7 requirements.
6.How does Aetrix verify that DMN2710UFB-7 is sourced from the original manufacturer or authorized distributors?
All DMN2710UFB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UFB-7 meets industry standards.
7.What is the process for return or replacement of DMN2710UFB-7?
All DMN2710UFB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UFB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2710UFB-7 part is unused and in its original packaging.
Return procedure for DMN2710UFB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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