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Diodes Incorporated DMN2710UFB-7B
- Part No.:
- DMN2710UFB-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-UFDFN
- Datasheet:
-
DMN2710UFB-7B.pdf
- Description:
- MOSFET BVDSS: 8V~24V X1-DFN1006-
- Quantity:
- Payment:
- Shipping:
Inventory:2,075
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Product details
Overview
DMN2710UFB-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in X1-DFN1006-3 package, featuring RDS(ON) = 0.45Ω @ VGS = 4.5V, 1.3A continuous drain current at 25°C, and ESD-protected gate. It serves as a compact, low-threshold power switch in space-constrained DC-DC converter output stages and load switches for portable electronics.
For engineers reviewing the DMN2710UFB-7B datasheet, DMN2710UFB-7B pinout, DMN2710UFB-7B application, or DMN2710UFB-7B equivalent, key selection criteria include its 0.6mm² footprint, 0.5–1.0V gate threshold, 0.72W power dissipation on FR-4, and thermal resistance of 174°C/W (steady-state) - critical for battery-powered wearable and IoT endpoint designs.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 14ns, tF = 65ns) and low gate charge (Qg = 0.6nC). Its body diode exhibits VSD = 0.7–1.2V at 150mA, supporting synchronous rectification and reverse-current blocking.
The device is characterized for operation from –55°C to +150°C with normalized RDS(ON) variation ≤1.8× across temperature, and gate threshold voltage drift ≤±0.1V over that range. It is rated for ±6V gate-source voltage and features NiPdAu-plated terminals compatible with lead-free reflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage for 3.3V/5V rail switching |
| RDS(ON) | 0.45Ω @ VGS = 4.5V - Enables <100mW conduction loss at 600mA in compact load switches |
| ID (continuous) | 1.3A @ TA = 25°C - Sufficient for USB-powered peripheral power gating |
| Qg | 0.6nC - Reduces gate drive power and enables >1MHz PWM operation with low-side driver ICs |
| RθJA | 174°C/W (FR-4, min pad) - Requires thermal vias for sustained >500mA operation above ambient |
| VGS(TH) | 0.5–1.0V - Ensures reliable turn-on with 1.8V GPIO or low-voltage logic controllers |
| Ciss | 42pF - Limits high-frequency gate oscillation risk in fast-switching buck converters |
Pinout & Package
Package: X1-DFN1006-3 (1.0 × 0.6 × 0.4 mm), 3-terminal DFN with exposed drain pad. Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connected to ground or return path in high-efficiency load switches |
| Pin 2 (Gate) | Control input (G) | Accepts logic-level signals down to 1.8V; ESD-protected with integrated gate diode |
| Pin 3 (Drain) | Power output (D) | Exposed copper pad - must be soldered to PCB ground plane for thermal and electrical performance |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint (0.6mm²) | Reduces PCB area by 92% vs. SOT-23, enabling miniaturized wearables and hearing aids |
| Low VGS(TH) (0.5–1.0V) | Guarantees full enhancement with 1.8V microcontroller I/O without level-shifting |
| ESD-protected gate (HBM ≥2kV) | Eliminates need for external gate protection in handheld assembly lines and field-replaceable modules |
| Green, halogen-free construction | Meets IPC-1752A Class 1 reporting requirements for automotive and medical OEM BOM compliance |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs for Bluetooth earbuds. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling battery discharge path; activated only during valid load conditions. Use Value: 0.45Ω RDS(ON) limits voltage drop to <300mV at 600mA, preserving runtime; 0.6mm² footprint fits within 2.5mm × 2.5mm module envelope. | Use Scenario: VBUS enable/disable control in portable USB-C accessories with dual-role power capability. IC Role / Device Role / Timing Role: High-speed load switch isolating downstream 5V rail during cable insertion/removal events. Use Value: 14ns turn-on delay and 65ns fall time prevent glitch-induced brownouts; ESD protection withstands >10kV contact discharge per IEC 61000-4-2. |
| Wearable Sensor Node Power Gate | Low-Power MCU Peripheral Switch |
Use Scenario: Power gating of optical heart-rate sensor and accelerometer in fitness trackers during sleep mode. IC Role / Device Role / Timing Role: Always-on, ultra-low-leakage switch (IDSS ≤100nA) enabling sub-μA system standby current. Use Value: 0.5V minimum gate threshold ensures activation from MCU's 1.8V IO rail; 0.001g weight minimizes mechanical stress on flexible PCBs. | Use Scenario: Selective powering of BLE radio, display driver, and SD card interface in smartwatch mainboard. IC Role / Device Role / Timing Role: Logic-controlled power rail sequencer coordinating wake-up timing between subsystems. Use Value: 0.6nC gate charge reduces switching energy to <1nJ per transition, extending battery life in burst-communication duty cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(ON) = 0.25Ω @ 4.5V, but larger X1-DFN1212-3 (1.2 × 1.2 mm) footprint | Better conduction efficiency at >1A, unsuitable for <2.0mm² board area constraints | Select when thermal budget allows larger package and peak current exceeds 1.2A |
| AO3400A | Same 20V rating, but SOT-23 package (2.9 × 1.3 mm), RDS(ON) = 0.035Ω @ 10V - requires 3.3V+ gate drive | Higher current capacity (5.7A), incompatible with 1.8V logic; no ESD protection | Choose only if gate drive voltage ≥3.3V and board space permits SOT-23 mounting |
Compared with DMN2016LFG-7 and AO3400A, DMN2710UFB-7B uniquely balances ultra-miniaturization, 1.8V compatibility, and integrated ESD protection - making it the sole option for space- and voltage-constrained wearable power management where gate drive headroom is limited and board real estate is premium.
Availability
DMN2710UFB-7B is available at Aetrix Electronics and suitable for battery-powered wearables, USB-C accessory power switching, and low-power sensor node power gating requiring stable component supply and long-term lifecycle support.
Supply support for DMN2710UFB-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' X1-DFN ultra-miniature MOSFET product line, engineered specifically for space-critical portable electronics where board area, weight, and low-voltage operability are primary design constraints.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DMN2710UFB-7B has an operating junction temperature range of –55°C to +150°C. For continuous DC operation, thermal design must ensure TJ remains ≤150°C under worst-case ambient and power dissipation conditions - verified using RθJA = 174°C/W (min-pad FR-4) or 96°C/W (with thermal vias).
Does this MOSFET require external gate resistors for stability?
No external gate resistor is required for basic switching stability due to its low Qg (0.6nC) and Ciss (42pF). However, a 10Ω series resistor is recommended in high-noise environments (e.g., motor drive proximity) to dampen ringing and reduce EMI emissions during edge transitions.
Can DMN2710UFB-7B be used in linear regulation mode?
It is not designed for linear regulation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only - continuous linear use risks thermal runaway due to positive RDS(ON) temperature coefficient and limited power dissipation (0.72W max on FR-4). Use only in saturated switching mode.
Is the exposed drain pad electrically connected to the drain terminal?
Yes - the bottom-exposed copper pad is internally connected to the drain (Pin 3). It must be soldered to a PCB copper pour tied to the drain net for both thermal conduction and electrical functionality. Floating or grounding the pad without drain connection violates the internal structure and degrades performance.
DMN2710UFB-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 720mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
DMN2710UFB-7B FAQ
1.How can I place an order for DMN2710UFB-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2710UFB-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2710UFB-7B reliable?
The price and inventory of DMN2710UFB-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UFB-7B is usually 5 days.
3.What payment methods are accepted for DMN2710UFB-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UFB-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2710UFB-7B?
DMN2710UFB-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2710UFB-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2710UFB-7B?
For technical support, including DMN2710UFB-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UFB-7B requirements.
6.How does Aetrix verify that DMN2710UFB-7B is sourced from the original manufacturer or authorized distributors?
All DMN2710UFB-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UFB-7B meets industry standards.
7.What is the process for return or replacement of DMN2710UFB-7B?
All DMN2710UFB-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UFB-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2710UFB-7B part is unused and in its original packaging.
Return procedure for DMN2710UFB-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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