Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN2710UFBQ-7

Part No.:
DMN2710UFBQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-UFDFN
Datasheet:
AetrixDMN2710UFBQ-7.pdf
Description:
MOSFET BVDSS: 8V~24V X1-DFN1006-
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,615

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN2710UFBQ from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in a 1.0 mm × 0.6 mm X1-DFN1006-3 package, delivering 0.45 Ω RDS(ON) at VGS = 4.5 V, 1.3 A continuous drain current, and ±6 V gate-source voltage rating for compact, high-efficiency power switching in automotive and portable electronics.

For engineers reviewing the DMN2710UFBQ datasheet, DMN2710UFBQ pinout, DMN2710UFBQ application, or DMN2710UFBQ equivalent, key selection criteria include its low 0.6 mm² footprint, 0.5–1.0 V gate threshold voltage, ESD-protected gate, 1.3 W thermal-rated power dissipation on thermally enhanced PCB, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance: tD(ON) = 14 ns, tF = 65 ns, and Qg = 0.6 nC at VGS = 4.5 V, enabling efficient operation in high-frequency DC-DC converters and load switches.

It integrates an ESD-protected gate structure with NiPdAu-plated terminals and features a body diode with VSD = 0.7–1.2 V at IS = 150 mA, supporting synchronous rectification and reverse-current blocking in space-constrained battery-powered systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V - supports 12 V automotive rail and 5 V/3.3 V logic-supplied loads without breakdown risk
RDS(ON) 0.45 Ω @ VGS = 4.5 V - enables ≤0.26 W conduction loss at 1.3 A, critical for thermal management in DFN packages
ID (TA = +25°C) 1.3 A - maximum steady-state current under standard FR-4 layout with 2 oz copper and thermal vias
Qg 0.6 nC - low gate charge reduces drive power and enables use with weak GPIOs or low-power controllers
TJ Range −55 to +150 °C - full operational range validated for under-hood automotive environments
Ciss 42 pF - input capacitance compatible with fast edge-rate drivers without excessive ringing
VGS(TH) 0.5–1.0 V - ensures turn-on with 1.8 V logic and robust noise margin below typical supply rails

Pinout & Package

Package: X1-DFN1006-3 (1.0 mm × 0.6 mm, 0.4 mm height), molded green plastic, UL 94V-0 rated, moisture sensitivity level 1, NiPdAu-plated copper leadframe.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Low-side reference node; connected to ground or return path; exposed pad is electrically tied to source
Pin 2 (Gate) Control input (G) ESD-protected MOS gate; requires <1.0 μA leakage control; drives with 0.5–1.0 V threshold
Pin 3 (Drain) Power output (D) High-side switching node; handles 20 V max VDS; carries full load current and body diode reverse recovery

Key Features

Feature Design Value
Footprint area 0.6 mm² - 13× smaller than SOT-23, enabling ultra-dense PCB layouts in wearables and ADAS modules
Gate threshold voltage 0.5–1.0 V - ensures reliable turn-on from 1.8 V I/O domains and improves noise immunity in noisy automotive environments
Thermal resistance (RθJA) 96 °C/W (with thermal vias) - allows 1.3 W power dissipation at +70 °C ambient, eliminating need for external heatsinking
ESD protection HBM ≥2 kV - integrated gate protection eliminates need for external TVS in most board-level ESD events
AEC-Q101 qualification Qualified per stress test schedule including HTGB, HTRB, and temperature cycling - certified for automotive powertrain and body electronics

Applications

Automotive Body Control Module USB-C Power Delivery Load Switch

Use Scenario: Low-side switching of LED lighting, window motors, and HVAC actuators in BCMs.

IC Role / Device Role / Timing Role: N-channel load switch controlling 12 V loads with PWM dimming capability.

Use Value: 0.45 Ω RDS(ON) minimizes heat generation in sealed enclosures; AEC-Q101 qualification ensures 15-year field reliability.

Use Scenario: In-line power path control for USB-C PD sink applications requiring 5–20 V input support.

IC Role / Device Role / Timing Role: Reverse-current blocking and inrush-limited power switch between source and device port.

Use Value: Fast 14 ns turn-on delay and low Qg enable precise timing control during PD contract negotiation and voltage transitions.

Wireless Earbud Battery Protection IoT Sensor Node Power Gating

Use Scenario: Discrete overcurrent and short-circuit protection for Li-ion battery discharge path in TWS earbuds.

IC Role / Device Role / Timing Role: High-side or low-side current limiter interfaced with fuel gauge IC or MCU ADC.

Use Value: 0.6 mm² footprint fits within 3.5 mm × 3.5 mm earbud PCB real estate; 1.3 A rating covers peak audio playback currents.

Use Scenario: Periodic power gating of BLE SoC, environmental sensors, and RF transceivers in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Ultra-low-leakage (100 nA IDSS) power switch enabling multi-year shelf life.

Use Value: Sub-1 V VGS(TH) ensures clean turn-off with 1.8 V MCU GPIO; 0.001 g weight contributes to sub-10 g total node mass.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LKQ-7 RDS(ON) = 0.35 Ω @ VGS = 4.5 V; larger X2-DFN1212-3 (1.2 mm × 1.2 mm) package Higher current (2.0 A) but 4× larger footprint; lacks AEC-Q101 certification Select when higher current headroom is required and automotive qualification is not mandatory
NVMFS5C426NLT1G RDS(ON) = 0.42 Ω @ VGS = 4.5 V; same X1-DFN1006-3 package; AEC-Q101 qualified Higher Qg (1.1 nC) and slower tF (110 ns); wider VGS(TH) range (1.0–2.5 V) Select when gate drive strength exceeds 0.6 nC budget and higher VGS(TH) improves noise rejection in industrial settings

Compared with DMN2710UFBQ, DMN2004LKQ-7 trades footprint efficiency for higher current capacity and relaxed thermal constraints, while NVMFS5C426NLT1G offers marginally lower RDS(ON) but demands stronger gate drive and tolerates less aggressive logic-level control.

Availability

DMN2710UFBQ is available at Aetrix Electronics and suitable for automotive body electronics, portable medical devices, and USB-C power delivery systems requiring stable component supply, AEC-Q101 compliance, and ultra-compact power switching.

Supply support for DMN2710UFBQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMN2710UFBQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive and portable power-switching applications where footprint, RDS(ON), and gate drive compatibility are critical.

FAQ

Is DMN2710UFBQ suitable for high-frequency PWM switching above 1 MHz?

Yes - with tD(ON) = 14 ns, tF = 65 ns, and Ciss = 42 pF, the DMN2710UFBQ supports PWM frequencies up to 2 MHz in buck converter topologies when paired with appropriate gate drivers and layout practices. Its low Qg minimizes switching losses at elevated frequencies.

What is the maximum allowable PCB copper area and via count for achieving the 1.3 W power rating?

To achieve the 1.3 W rating (RθJA = 96 °C/W), Diodes specifies a 2 oz copper FR-4 board with thermal vias connecting the exposed source pad to a 1-inch square copper plane on the bottom layer. Minimum recommended pad layout includes G1 = 0.30 mm and G2 = 0.20 mm solder mask openings per the X1-DFN1006-3 outline.

Does the DMN2710UFBQ require external gate resistors for EMI control?

Not inherently - its 0.6 nC Qg and 6.5 pF Crss yield low inherent EMI generation. However, a 5–10 Ω series gate resistor is recommended when driving from high-impedance sources (e.g., MCU GPIO) to dampen ringing and reduce dv/dt-induced coupling in mixed-signal layouts.

Can DMN2710UFBQ be used in linear regulator pass transistor configurations?

No - it is not characterized or rated for linear-mode operation. The SOA curve (Figure 12) shows safe operation only for pulsed or switched conditions; continuous linear operation risks thermal runaway due to positive RDS(ON) temperature coefficient and limited power derating beyond 70 °C ambient.

DMN2710UFBQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Vgs (Max):
±6V
Input Capacitance (Ciss) (Max) @ Vds:
42 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
720mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X1-DFN1006-3

DMN2710UFBQ-7 FAQ

1.How can I place an order for DMN2710UFBQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2710UFBQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2710UFBQ-7 reliable?

The price and inventory of DMN2710UFBQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UFBQ-7 is usually 5 days.

3.What payment methods are accepted for DMN2710UFBQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UFBQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2710UFBQ-7?

DMN2710UFBQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2710UFBQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2710UFBQ-7?

For technical support, including DMN2710UFBQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UFBQ-7 requirements.

6.How does Aetrix verify that DMN2710UFBQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN2710UFBQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UFBQ-7 meets industry standards.

7.What is the process for return or replacement of DMN2710UFBQ-7?

All DMN2710UFBQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UFBQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2710UFBQ-7 part is unused and in its original packaging.

Return procedure for DMN2710UFBQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2710UFBQ-7 Tags

  • DMN2710UFBQ-7
  • DMN2710UFBQ-7 PDF
  • DMN2710UFBQ-7 Datasheet
  • DMN2710UFBQ-7 Specifications
  • DMN2710UFBQ-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN2710UFBQ-7
  • Buy DMN2710UFBQ-7
  • DMN2710UFBQ-7 Price
  • DMN2710UFBQ-7 Distributor
  • DMN2710UFBQ-7 Supplier
  • DMN2710UFBQ-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER