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Diodes Incorporated DMN2710UFBQ-7B

Part No.:
DMN2710UFBQ-7B
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-UFDFN
Datasheet:
AetrixDMN2710UFBQ-7B.pdf
Description:
MOSFET BVDSS: 8V~24V X1-DFN1006-
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,466

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Product details

Overview

DMN2710UFBQ-7B from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in X1-DFN1006-3 package, rated for 20V VDSS, 0.45Ω RDS(ON) @ 4.5V VGS, and 1.3A ID at +25°C - optimized for space-constrained automotive power switches and portable battery protection circuits.

For engineers reviewing the DMN2710UFBQ-7B datasheet, DMN2710UFBQ-7B pinout, DMN2710UFBQ-7B application, or DMN2710UFBQ-7B equivalent, this page delivers verified electrical parameters, thermal performance under FR-4 board conditions, gate charge profile, and AEC-Q101 compliance status - all critical for low-voltage load switching validation.

Technical Context

This MOSFET uses a trench-gate process to achieve low RDS(ON) (0.13Ω typ @ 4.5V) while maintaining fast switching (tD(ON) = 14ns, tF = 65ns) and robust ESD protection on gate. Its 0.6mm² footprint enables high-density layout in compact modules.

The device features a low 0.5–1.0V gate threshold (VGS(TH)) and operates across –55°C to +150°C junction temperature, with thermal resistance RθJA = 96°C/W when mounted on 2oz copper with thermal vias - supporting thermally demanding automotive ambient conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - supports 12V automotive systems with margin against transients
RDS(ON) @ 4.5V 0.45Ω max - enables <1.3A continuous current with ≤0.75W conduction loss at TA=25°C
Qg 0.6nC - reduces gate drive power and enables efficient PWM control at >1MHz
tF 65ns - limits switching energy loss during turn-off in high-frequency DC-DC stages
TJ Range –55°C to +150°C - certified for under-hood automotive environments per AEC-Q101
RθJA (2oz Cu + vias) 96°C/W - defines thermal derating curve for 1.3W PD operation on production PCBs
VGS(TH) 0.5–1.0V - ensures reliable turn-on with 1.8V/2.5V logic-level microcontrollers

Pinout & Package

Package: X1-DFN1006-3 - ultra-compact 1.0 × 0.6 mm, 0.45 mm height, NiPdAu-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal Connected to ground or low-side return path; exposed pad is electrically tied to Source
Pin 2 (Gate) Control input Accepts logic-level voltage (1.8V–4.5V); integrated ESD protection diode to Source
Pin 3 (Drain) Power output Carries switched load current; connected to VIN or higher-potential rail

Key Features

Feature Design Value
Footprint area 0.6 mm² - 13× smaller than SOT-23, enabling PCB real estate savings in wearables and ADAS sensors
ESD protection HBM ≥2kV on Gate - eliminates need for external gate protection in cost-sensitive automotive modules
AEC-Q101 qualification Qualified for automotive applications with PPAP capability and IATF 16949 manufacturing - supports Tier-1 BOM inclusion
Green packaging Halogen- and antimony-free, RoHS 3 compliant - meets EU ELV and OEM sustainability requirements
Low VGS(TH) variation ±0.1V over –55°C to +150°C - ensures stable turn-on timing across full automotive temperature range

Applications

Automotive Load Switch USB Power Delivery Protection

Use Scenario: Low-side power switch for infotainment display backlight or HVAC fan motor in 12V vehicle architecture.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as active-low load switch, controlled by MCU GPIO with 2.5V logic.

Use Value: 0.45Ω RDS(ON) limits voltage drop to <0.6V at 1.2A, preserving system efficiency while meeting AEC-Q101 reliability requirements.

Use Scenario: Overcurrent and short-circuit protection in USB-C port power path for notebook docking stations.

IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch placed between USB-PD controller and Type-C connector.

Use Value: Fast 65ns fall time enables rapid current cutoff during fault events; 20V rating covers USB-PD 20V maximum bus voltage.

Portable Battery Management Industrial Sensor Node Power Gating

Use Scenario: Charge path isolation and battery discharge control in Bluetooth earbud charging case.

IC Role / Device Role / Timing Role: Dual-function switch managing Li-ion cell connection to charger IC and system load.

Use Value: 0.6mm² footprint allows integration into space-limited 30mm × 30mm PCB; 0.5V VGS(TH) ensures activation from 1.8V SoC I/O.

Use Scenario: Power gating for ultra-low-power environmental sensor clusters in smart building nodes.

IC Role / Device Role / Timing Role: High-side or low-side enable switch controlling power to analog front-end and ADC subsystems.

Use Value: 100nA IDSS leakage at 20V minimizes standby current drain; –55°C rating supports outdoor deployment in cold climates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2016LFG-7 20V VDSS, 0.28Ω RDS(ON) @ 4.5V, larger X1-DFN1212-3 package (1.2 × 1.2 mm) Higher current handling (2.5A), but 4× larger footprint - unsuitable for ultra-compact designs Select when higher ID and thermal margin are prioritized over board space
AO3400A 30V VDSS, 0.042Ω RDS(ON) @ 10V, SOT-23 package, no AEC-Q101 qualification Lower RDS(ON) but requires 10V gate drive; not automotive-qualified or RoHS 3/halogen-free Select only for non-automotive industrial use where higher voltage margin and lower on-resistance outweigh qualification needs

Compared with DMN2710UFBQ-7B, DMN2016LFG-7 trades size for higher current capacity, while AO3400A offers lower RDS(ON) at the cost of automotive compliance and green packaging - making DMN2710UFBQ-7B the optimal choice for space- and qualification-constrained 12V automotive loads.

Availability

DMN2710UFBQ-7B is available at Aetrix Electronics and suitable for automotive load switching, USB-C power protection, and portable battery management requiring stable component supply, AEC-Q101 traceability, and halogen-free compliance.

Supply support for DMN2710UFBQ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' automotive-qualified logic-level MOSFET product line, engineered specifically for low-voltage, high-density power switching in AEC-Q101-compliant automotive subsystems and portable electronics.

FAQ

Is DMN2710UFBQ-7B qualified for automotive applications?

Yes - it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. The device meets automotive change control requirements and is approved for use in engine control, body electronics, and infotainment systems where reliability under thermal stress and vibration is mandatory.

What is the thermal performance on a standard FR-4 PCB?

When mounted on a 2oz copper FR-4 board with thermal vias to a 1-inch square bottom-layer copper plate, DMN2710UFBQ-7B achieves RθJA = 96°C/W and PD = 1.3W. Without vias (minimum pad layout), RθJA rises to 174°C/W and PD drops to 0.72W - both values are specified in the datasheet and validated per JEDEC standards.

Does DMN2710UFBQ-7B require external gate resistors for stability?

No external gate resistor is required for basic switching, but a 10Ω series resistor is used in the datasheet's dynamic test circuit (Figure 12) to control dV/dt and prevent ringing. For high-speed PWM (>500kHz), a 5–20Ω resistor is recommended to dampen gate oscillation without compromising tD(ON)/tF performance.

How does the body diode performance impact reverse-current applications?

The intrinsic body diode has VSD = 0.7–1.2V at 150mA and tRR = 88ns, enabling moderate reverse-recovery performance in synchronous rectification or bidirectional current paths. However, it is not optimized for freewheeling in high-di/dt buck converters - external Schottky clamping is advised for such cases.

DMN2710UFBQ-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Vgs (Max):
±6V
Input Capacitance (Ciss) (Max) @ Vds:
42 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
720mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X1-DFN1006-3

DMN2710UFBQ-7B FAQ

1.How can I place an order for DMN2710UFBQ-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2710UFBQ-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2710UFBQ-7B reliable?

The price and inventory of DMN2710UFBQ-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UFBQ-7B is usually 5 days.

3.What payment methods are accepted for DMN2710UFBQ-7B?

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DMN2710UFBQ-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2710UFBQ-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2710UFBQ-7B?

For technical support, including DMN2710UFBQ-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UFBQ-7B requirements.

6.How does Aetrix verify that DMN2710UFBQ-7B is sourced from the original manufacturer or authorized distributors?

All DMN2710UFBQ-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UFBQ-7B meets industry standards.

7.What is the process for return or replacement of DMN2710UFBQ-7B?

All DMN2710UFBQ-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UFBQ-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2710UFBQ-7B part is unused and in its original packaging.

Return procedure for DMN2710UFBQ-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2710UFBQ-7B Tags

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