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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2710UT-13

Name: DMN2710UT-13
Brand: Diodes Incorporated
SKU: DMN2710UT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2710UT-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-523

Datasheet:: DMN2710UT-13.pdf

Description:: MOSFET BVDSS: 8V~24V SOT523 T&R

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Product details

Overview

DMN2710UT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V V_DSS, 0.45Ω R_DS(ON) @ 4.5V V_GS, and 0.87A continuous drain current at 25°C - optimized for low-voltage load switching in space-constrained portable power rails.

For engineers reviewing the DMN2710UT-13 datasheet, DMN2710UT-13 pinout, DMN2710UT-13 application, or DMN2710UT-13 equivalent, key selection criteria include ultra-low gate charge (0.6nC), sub-1Ω on-resistance at 2.5V drive, ESD-protected gate, thermal resistance of 241°C/W under enhanced layout, and compatibility with 1.8V–4.5V logic-level control in battery-powered systems.

Technical Context

This MOSFET employs a planar trench-enhanced silicon process to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 4.9ns, t_F = 174ns) and low dynamic capacitance (C_iss = 42pF, C_oss = 13pF). Its gate threshold voltage (0.5–1.0V) enables reliable turn-on with 1.8V microcontroller I/O.

The device integrates an intrinsic body diode with V_SD = 0.7–1.2V @ 150mA and reverse recovery charge Q_RR = 29nC, supporting synchronous rectification and bidirectional current handling in compact DC-DC stages where layout area and thermal dissipation are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V - supports input rails up to 18V with 10% margin for transient spikes in USB-powered and Li-ion systems.
R_DS(ON) @ 4.5V	0.45Ω max - limits conduction loss to ≤0.35W at 0.87A, enabling use without heatsinking in thin PCBs.
Q_g	0.6nC - reduces gate drive power and enables efficient PWM switching above 1MHz in buck converters.
V_GS(TH)	0.5–1.0V - ensures full enhancement with 1.8V GPIO, eliminating need for level shifters in modern MCU interfaces.
R_θJA (enhanced layout)	241°C/W - allows 0.52W power dissipation at +75°C ambient when using 2oz copper thermal pad per datasheet Note 6.
C_iss	42pF - minimizes Miller effect and improves noise immunity in high-dV/dt environments like motor drivers.

Pinout & Package

SOT523 ultra-small surface-mount package (1.60 × 1.60 × 0.75 mm), molded green compound, matte tin-plated Alloy 42 leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; ESD-protected; requires ≤±6V bias; 0.6nC total charge for full turn-on.
S	Source	Reference node for gate drive; connects to system ground or low-side return path in load switch topology.
D	Drain	Power output terminal; handles 0.87A continuous; body diode anode tied internally to source.

Key Features

Feature	Design Value
Ultra-low R_DS(ON) at 2.5V	0.6Ω max - enables direct interface with 2.5V logic and low-power PMIC outputs without gate boosting.
Low input capacitance	C_iss = 42pF - reduces gate drive current demand and improves switching efficiency in high-frequency DC-DC regulators.
ESD-protected gate	HBM >2kV - eliminates need for external gate protection in handheld and wearable designs subject to handling stress.
Thermally optimized layout support	R_θJA = 241°C/W with 1-inch² 2oz copper - delivers 60% lower junction temperature vs. standard FR-4 mounting for same power dissipation.

Applications

USB Power Switching

Li-ion Battery Protection

Use Scenario: Selective enable/disable of 5V USB VBUS to peripheral ports in smartphones and tablets.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path; operates in static on/off mode with <1μs response to enable signal.

Use Value: 0.45Ω R_DS(ON) limits voltage drop to <0.4V at 0.8A, preserving USB 2.0 compliance and minimizing self-heating in 1.6mm² footprint.

Use Scenario: Secondary overcurrent cutoff in single-cell Li-ion packs with integrated fuel gauges.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between cell cathode and protection IC output; activated during fault conditions.

Use Value: Body diode forward voltage ≤1.2V at 0.65A ensures minimal voltage loss during discharge path interruption, extending effective pack runtime.

Wearable Sensor Power Gating

IoT Node Voltage Regulation

Use Scenario: Dynamic power cycling of MEMS accelerometers and environmental sensors in always-on wearables.

IC Role / Device Role / Timing Role: High-side or low-side power gate controlled by ultra-low-power MCU GPIO; duty-cycled at 10–100Hz.

Use Value: 0.6nC Q_g and 0.5–1.0V V_GS(TH) allow full switching with <10nJ gate energy, reducing MCU wake-up overhead and extending sleep-mode battery life.

Use Scenario: Post-regulation power stage in sub-1W buck converter supplying 1.8V/3.3V to BLE SoCs and RF transceivers.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side; commutates at 2–5MHz with body diode reverse recovery time t_RR = 88ns.

Use Value: Q_RR = 29nC and low C_oss minimize switching losses and EMI generation, improving efficiency by ≥3% vs. Schottky alternatives at light loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(ON) = 0.28Ω @ 4.5V, but SOT-23 package (larger footprint, higher R_θJA = 320°C/W)	Better conduction loss, but less suitable for ultra-thin PCBs requiring <1.7mm² area	Prefer when thermal headroom exists and lower on-resistance justifies 3× larger board area.
AO3400	R_DS(ON) = 0.042Ω @ 10V, but V_GS(TH) = 1.0–2.5V - unreliable turn-on below 2.5V	Requires 3.3V+ gate drive; unsuitable for 1.8V MCU interfaces without level shifting	Select only if system uses ≥3.3V logic and prioritizes lowest possible R_DS(ON) over gate drive simplicity.

Compared with DMN2710UT-13, DMN2004LK-7 trades size for lower R_DS(ON) and higher thermal resistance, while AO3400 demands higher gate voltage and offers no benefit at 1.8V–2.5V drive - making DMN2710UT-13 uniquely suited for miniaturized, low-voltage, logic-compatible load switching.

Availability

DMN2710UT-13 is available at Aetrix Electronics and suitable for USB power management, wearable sensor gating, Li-ion battery protection, and IoT node voltage regulation requiring stable component supply across production lifecycles.

Supply support for DMN2710UT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMN2710UT belongs to Diodes' logic-level MOSFET product line, engineered specifically for space-constrained, low-voltage power control in battery-powered devices where gate drive simplicity, thermal performance, and footprint minimization are primary design constraints.

FAQ

What is the maximum continuous drain current for DMN2710UT-13 at 75°C ambient?

The maximum continuous drain current is 0.7A at T_A = +75°C with device mounted on FR-4 PCB using 2oz copper thermal pad per datasheet Note 6. This rating assumes steady-state operation with PD = 0.52W and R_θJA = 241°C/W, limiting junction temperature to 150°C.

Does DMN2710UT-13 support 1.8V logic-level gate drive?

Yes - its gate threshold voltage range is 0.5–1.0V, and it achieves R_DS(ON) = 0.75Ω max at V_GS = 1.8V and I_D = 350mA. This guarantees full enhancement with 1.8V CMOS outputs without external level shifting.

Is the body diode suitable for reverse-current blocking in battery applications?

Yes - the intrinsic body diode has V_SD = 0.7–1.2V at 150mA and supports continuous forward current up to 0.65A. It provides reliable reverse-current blocking when the MOSFET is off, with t_RR = 88ns ensuring minimal switching loss during commutation.

What is the recommended PCB pad layout for optimal thermal performance?

Use the 1-inch² 2oz copper thermal pad specified in datasheet Note 6: dimensions C = 1.29 × 0.40 mm, X1 = 0.70 mm, Y = 0.51 mm, Y1 = 1.80 mm. This layout achieves R_θJA = 241°C/W, enabling 0.52W power dissipation at +75°C ambient.

DMN2710UT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 870mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: 42 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 320mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-523

DMN2710UT-13 FAQ

1.How can I place an order for DMN2710UT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2710UT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2710UT-13 reliable?

The price and inventory of DMN2710UT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UT-13 is usually 5 days.

3.What payment methods are accepted for DMN2710UT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2710UT-13?

DMN2710UT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2710UT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2710UT-13?

For technical support, including DMN2710UT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UT-13 requirements.

6.How does Aetrix verify that DMN2710UT-13 is sourced from the original manufacturer or authorized distributors?

All DMN2710UT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UT-13 meets industry standards.

7.What is the process for return or replacement of DMN2710UT-13?

All DMN2710UT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2710UT-13 part is unused and in its original packaging.

Return procedure for DMN2710UT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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