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Diodes Incorporated DMN2710UTQ-13

Part No.:
DMN2710UTQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-523
Datasheet:
AetrixDMN2710UTQ-13.pdf
Description:
MOSFET BVDSS: 8V~24V SOT523 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,966

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Product details

Overview

DMN2710UTQ-13 from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V VDSS, 0.45Ω RDS(ON) at VGS = 4.5V, and 0.87A continuous drain current at TA = +25°C. It serves as a low-voltage load switch or synchronous rectifier in space-constrained automotive and portable power management circuits.

For engineers reviewing the DMN2710UTQ-13 datasheet, DMN2710UTQ-13 pinout, DMN2710UTQ-13 application, or DMN2710UTQ-13 equivalent, key selection criteria include its ultra-low gate charge (0.6 nC), 42 pF input capacitance, 1.6 kΩ gate resistance, and guaranteed operation from –55°C to +150°C junction temperature.

Technical Context

This MOSFET employs planar trench-enhanced silicon technology optimized for low RDS(ON) at gate voltages down to 1.8V while maintaining fast switching (tD(ON) = 4.9 ns, tF = 174 ns) and low dynamic losses. Its ESD-protected gate and 6V VGSS rating support robust handling in automated assembly lines.

The device operates with a gate threshold voltage of 0.5–1.0V and exhibits normalized RDS(ON) variation ≤1.8× across –55°C to +150°C, enabling stable performance in thermally aggressive environments such as under-hood automotive modules and battery-powered IoT sensors.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V - Maximum drain-source blocking voltage before avalanche conduction begins.
RDS(ON) @ VGS = 4.5V 0.45 Ω - On-resistance at standard logic-level drive; enables <100 mW conduction loss at 600 mA.
Qg 0.6 nC - Total gate charge; determines driver strength requirement and switching energy efficiency.
Ciss 42 pF - Input capacitance at VDS = 16 V; impacts gate drive loop stability and turn-on speed.
ID (TA = +25°C) 0.87 A - Continuous DC drain current with FR-4 PCB and minimum pad layout; defines thermal derating baseline.
TJ Range –55°C to +150°C - Qualified operating junction temperature range per AEC-Q101 stress testing.

Pinout & Package

SOT523 is a 3-pin ultra-small surface-mount plastic package (1.60 × 1.60 × 0.75 mm), designed for high-density PCB layouts and reflow-compatible assembly. Its matte tin–annealed terminals meet MIL-STD-202 solderability requirements.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 1.8–4.5 V logic-level signals; ESD-protected; requires <0.6 nC charge for full enhancement.
S (Source) Reference node for gate drive and current return path Internally tied to substrate; forms cathode of integrated body diode; must be connected to system ground or low-side reference.
D (Drain) Power output terminal Carries switched load current up to 0.87 A; connects to positive rail or switched load; withstands 20 V transient spikes.

Key Features

Feature Design Value
Ultra-low RDS(ON) at 2.5 V drive 0.6 Ω - Enables direct interface with 2.5 V microcontroller GPIO without level-shifting.
Low input capacitance 42 pF - Reduces gate drive power and improves high-frequency switching efficiency in DC-DC converters.
Fast turn-off fall time 174 ns - Minimizes overlap conduction loss in synchronous buck topologies.
AEC-Q101 qualification Qualified for automotive applications including engine control, body electronics, and ADAS power rails.
Green, halogen-free construction <900 ppm Br/Cl, <1000 ppm Sb - Complies with IATF 16949 manufacturing and EU RoHS 3 directives.

Applications

Automotive Body Control Module USB-C Power Delivery Load Switch

Use Scenario: Controlling 5 V/3.3 V auxiliary power rails in door modules and lighting controllers.

IC Role / Device Role: Low-side load switch enabling controlled power-up sequencing and fault isolation.

Use Value: 0.45 Ω RDS(ON) limits voltage drop to <265 mV at 600 mA, preserving regulation margin for downstream LDOs.

Use Scenario: Enabling/disabling VBUS on USB-C receptacles in portable accessories.

IC Role / Device Role: Single-N MOSFET load switch with integrated ESD protection on gate and drain.

Use Value: 6 V VGSS and ±1.0 μA gate leakage ensure compatibility with USB PD controller logic levels and low standby current.

Wearable Sensor Node Power Rail Industrial IoT Edge Node Battery Protection

Use Scenario: Managing power to MEMS accelerometers and BLE radios in compact wearables.

IC Role / Device Role: High-efficiency, low-quiescent-current power switch activated by MCU GPIO.

Use Value: 0.002 g weight and 1.6 mm² footprint minimize board area; 100 nA IDSS preserves battery life during sleep mode.

Use Scenario: Isolating backup supercapacitor banks from main supply during brown-out events.

IC Role / Device Role: Reverse-polarity and overcurrent-protected power path switch.

Use Value: 0.75 Ω RDS(ON) at VGS = 1.8 V allows use with low-power supervisor ICs; 150°C TJ rating supports unventilated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2016LFG-7 Lower RDS(ON) (0.28 Ω @ 4.5 V), larger SOT-23 package, higher Qg (1.2 nC) Requires more PCB area; better suited for higher-current (>1.2 A) loads with relaxed size constraints Select when lower conduction loss outweighs board space penalty and gate drive capability permits higher Qg.
AO3400A Higher RDS(ON) (0.035 Ω @ 10 V), non-AEC-Q101, SOT-23 package, higher Ciss (870 pF) Lacks automotive qualification; unsuitable for safety-critical or temperature-extreme deployments Use only in cost-sensitive consumer applications where AEC-Q101 and –55°C operation are not required.

Compared with DMN2710UTQ-13, DMN2016LFG-7 delivers lower conduction loss but sacrifices miniaturization and gate drive efficiency, while AO3400A offers higher current capacity at the expense of automotive compliance and thermal robustness.

Availability

DMN2710UTQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, wearable sensor nodes, and industrial IoT edge nodes requiring stable component supply and long-term lifecycle assurance.

Supply support for DMN2710UTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN2710UTQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for low-voltage, high-density power switching in space- and thermal-constrained automotive and portable applications.

FAQ

Is DMN2710UTQ-13 suitable for hot-swap applications?

No - DMN2710UTQ-13 lacks integrated slew-rate control, current limiting, or fault reporting circuitry required for safe hot-swap operation. It functions as a basic on/off switch and must be paired with external current-sense and timing circuitry for inrush management in live-insertion scenarios.

What is the maximum recommended PCB copper area for thermal relief at 0.87 A continuous current?

For continuous 0.87 A operation at TA = +25°C, Diodes specifies a 1-inch square 2 oz copper thermal pad connected to the drain pad via multiple vias. Without this, RθJA degrades from 241°C/W to 395°C/W, limiting usable current to ~0.5 A under still-air conditions.

Does the body diode support reverse recovery in synchronous rectification?

Yes - the integrated body diode has tRR = 88 ns and QRR = 29 nC at IF = 1.0 A and di/dt = 100 A/μs, making it suitable for low-frequency (<500 kHz) synchronous rectification where reverse recovery loss must be minimized relative to Schottky alternatives.

Can DMN2710UTQ-13 be used in linear regulator pass transistor configurations?

No - its SOA curve (Figure 12) shows no DC-rated region above 0.1 A at VDS > 5 V; sustained linear operation causes rapid thermal runaway. It is specified only for switching-mode applications with defined pulse widths and duty cycles.

DMN2710UTQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
870mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Vgs (Max):
±6V
Input Capacitance (Ciss) (Max) @ Vds:
42 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
320mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DMN2710UTQ-13 FAQ

1.How can I place an order for DMN2710UTQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2710UTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2710UTQ-13 reliable?

The price and inventory of DMN2710UTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UTQ-13 is usually 5 days.

3.What payment methods are accepted for DMN2710UTQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UTQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2710UTQ-13?

DMN2710UTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2710UTQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2710UTQ-13?

For technical support, including DMN2710UTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UTQ-13 requirements.

6.How does Aetrix verify that DMN2710UTQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN2710UTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UTQ-13 meets industry standards.

7.What is the process for return or replacement of DMN2710UTQ-13?

All DMN2710UTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UTQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2710UTQ-13 part is unused and in its original packaging.

Return procedure for DMN2710UTQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2710UTQ-13 Tags

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