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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2710UTQ-7

Name: DMN2710UTQ-7
Brand: Diodes Incorporated
SKU: DMN2710UTQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2710UTQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-523

Datasheet:: DMN2710UTQ-7.pdf

Description:: MOSFET BVDSS: 8V~24V SOT523 T&R

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Product details

Overview

DMN2710UTQ-7 from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V V_DSS, 0.45Ω R_DS(ON) @ 4.5V V_GS, and 0.87A continuous drain current at +25°C - optimized for low-voltage load switching in automotive power management systems.

For engineers reviewing the DMN2710UTQ-7 datasheet, DMN2710UTQ-7 pinout, DMN2710UTQ-7 application, or DMN2710UTQ-7 equivalent, this device delivers verified ultra-low on-resistance with fast switching (t_F = 174 ns), ESD-protected gate, and IATF 16949-manufactured reliability for space-constrained DC-DC and battery protection circuits.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve sub-0.5Ω R_DS(ON) at logic-level gate drive (2.5V–4.5V), enabling direct interface with 3.3V/2.5V microcontrollers without level-shifting. Its low C_iss (42 pF) and Q_g (0.6 nC) minimize drive loss and support high-frequency PWM operation up to 1 MHz.

The integrated body diode exhibits low V_SD (0.7 V typ. @ 150 mA) and fast reverse recovery (t_RR = 88 ns), supporting synchronous rectification and bidirectional current handling in compact power rails. Thermal resistance R_θJA is 241°C/W under 2 oz copper thermal bias - critical for sustained operation in automotive ambient up to +125°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - supports 12V automotive systems with 67% margin over nominal rail.
R_DS(ON) @ 4.5V	0.45 Ω - enables <190 mW conduction loss at 0.65A load, reducing thermal stress in SOT523.
I_D (T_A = +25°C)	0.87 A - sufficient for USB-C PD load switches and sensor power gating in ADAS modules.
C_iss	42 pF - allows clean 10 ns turn-on delay with 10Ω gate resistor, minimizing shoot-through risk.
t_F	174 ns - ensures <200 ns total switching transition, suitable for 500 kHz buck converter sync FETs.
V_GS(TH)	0.5–1.0 V - guarantees reliable turn-on with 1.8V GPIOs, eliminating need for external bias networks.
T_J Range	−55°C to +150°C - meets AEC-Q101 temperature cycling and storage requirements for engine bay use.

Pinout & Package

SOT523 ultra-small surface-mount package (1.60 × 1.60 × 0.75 mm), molded green compound, matte tin-plated alloy-42 leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	ESD-protected terminal accepting 0.5–4.5V logic-level drive; requires no external gate resistor for ≤100 kHz switching.
S (Source)	Reference node / return path	Connected to system ground or low-side return; body diode anode - used for reverse-current blocking in load switch configurations.
D (Drain)	Power output node	Switches 20V rail to load; layout must minimize trace inductance to suppress V_DS overshoot during t_F-limited turn-off.

Key Features

Feature	Design Value
Ultra-low R_DS(ON) at 2.5V V_GS	0.6 Ω - enables direct control from low-voltage MCUs (e.g., ARM Cortex-M0+) without gate drivers.
Low Q_g (0.6 nC)	Reduces gate drive power by >40% vs. comparable SOT-23 MOSFETs, extending battery life in portable automotive sensors.
AEC-Q101 qualification	Validated for automotive change control, PPAP submission, and IATF 16949 production - required for Tier-1 module BOMs.
Green, halogen-free construction	<900 ppm Br+Cl, <1000 ppm Sb - satisfies EU ELV Directive and OEM sustainability mandates for vehicle electronics.

Applications

DC-DC Converter Sync FET

Automotive Load Switch

Use Scenario: High-efficiency 5V-to-3.3V buck converter in infotainment head unit power tree.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves 94% efficiency at 1A load (vs. 89% with diode), cutting thermal dissipation by 210 mW in confined PCB area.

Use Scenario: Controlled power enable for camera module in rear-view system.

IC Role / Device Role: Single-N high-side load switch (with external charge pump) managing inrush and fault isolation.

Use Value: Limits peak inrush to <300 mA via controlled V_GS ramp, preventing brown-out of 12V supply during cold start.

USB Power Delivery Gate

Body Control Module Sensor Power

Use Scenario: VBUS path control in Type-C receptacle with overcurrent detection.

IC Role / Device Role: Low-R_DS(ON) pass element in eFuse IC companion circuit.

Use Value: Enables accurate 500 mA current sensing with <25 mV drop, preserving voltage margin for USB 2.0 signaling.

Use Scenario: On-demand power gating for tire pressure monitoring system (TPMS) RF transceiver.

IC Role / Device Role: Low-leakage (100 nA IDSS) switch isolating sensor during sleep mode.

Use Value: Reduces quiescent current by 0.8 μA per channel, extending 10-year battery life target by 12%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2021UFB-7	Lower R_DS(ON) (0.25Ω @ 4.5V) but higher Q_g (1.1 nC); same SOT523 package.	Better conduction loss at high current (>0.5A), but slower switching limits >300 kHz use.	Select when thermal budget dominates over switching frequency - e.g., always-on battery disconnect.
AO3400A	Higher R_DS(ON) (0.055Ω @ 10V) but rated for 30V; SOT23-3 package (larger footprint).	Supports wider input range (up to 24V), but lacks AEC-Q101 qualification and fails automotive PPAP.	Acceptable for non-automotive industrial DC-DC where qualification isn't mandated and board space permits SOT23.

Compared with DMN2021UFB-7 and AO3400A, the DMN2710UTQ-7 uniquely balances ultra-low gate charge, AEC-Q101 compliance, and 20V rating - making it the only choice for space-limited, safety-critical automotive load switching where both efficiency and qualification are mandatory.

Availability

DMN2710UTQ-7 is available at Aetrix Electronics and suitable for automotive power management, USB-C PD load switching, and battery-powered sensor modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN2710UTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets with ISO/TS 16949 and IATF 16949 certified facilities.

This device belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for compact, high-efficiency power switching in automotive subsystems where space, thermal performance, and qualification rigor are non-negotiable.

FAQ

Is DMN2710UTQ-7 suitable for high-side switching without a charge pump?

No. As an N-channel MOSFET, DMN2710UTQ-7 requires gate voltage exceeding source voltage to conduct. For true high-side switching in 12V automotive systems, a gate driver with charge pump or bootstrap circuit is mandatory to achieve ≥14.5V V_GS. Its 6V V_GSS rating prohibits direct 12V gate drive.

What is the maximum safe operating frequency for DMN2710UTQ-7 in PWM applications?

Based on t_F = 174 ns and t_D(OFF) = 386 ns, the device supports clean switching up to 500 kHz with appropriate gate drive strength (≤10Ω series resistor). Above this, overlap losses increase significantly due to insufficient dead-time margin between turn-off and turn-on transitions.

Does the SOT523 package require special PCB layout considerations?

Yes. The SOT523's 0.5 mm pitch and minimal pad area demand strict adherence to Diodes' recommended layout: 1.29 × 0.40 mm solder pads with 0.70 mm X1 spacing. Thermal vias under the drain pad are essential to achieve the 241°C/W R_θJA rating - omitting them degrades power handling by 40%.

How does the body diode performance impact reverse-current protection?

The body diode has V_SD = 0.7 V (typ.) and t_RR = 88 ns, enabling effective reverse-current blocking in load-switch configurations. However, its 0.65A I_S rating limits sustained reverse conduction - for >1A reverse fault currents, external Schottky clamping is recommended to prevent thermal runaway.

DMN2710UTQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 870mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: 42 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 320mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-523

DMN2710UTQ-7 FAQ

1.How can I place an order for DMN2710UTQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2710UTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2710UTQ-7 reliable?

The price and inventory of DMN2710UTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UTQ-7 is usually 5 days.

3.What payment methods are accepted for DMN2710UTQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UTQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2710UTQ-7?

DMN2710UTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2710UTQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2710UTQ-7?

For technical support, including DMN2710UTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UTQ-7 requirements.

6.How does Aetrix verify that DMN2710UTQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN2710UTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UTQ-7 meets industry standards.

7.What is the process for return or replacement of DMN2710UTQ-7?

All DMN2710UTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UTQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2710UTQ-7 part is unused and in its original packaging.

Return procedure for DMN2710UTQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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