Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN2710UV-7

Part No.:
DMN2710UV-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMN2710UV-7.pdf
Description:
MOSFET 2N-CH 20V 0.92A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,839

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN2710UV from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 20V VDSS, 0.45Ω RDS(ON) at VGS = 4.5V, and 0.92A continuous drain current at TA = +25°C. It serves as a compact, low-threshold switching element in battery-powered load control and power converter topologies.

For engineers reviewing the DMN2710UV datasheet, DMN2710UV pinout, DMN2710UV application, or DMN2710UV equivalent, key selection criteria include its sub-1V gate threshold voltage, ultra-small SOT563 footprint, low input capacitance (42pF), fast turn-off delay (386ns), and AEC-Q101 readiness for automotive-grade designs.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing a common source connection in a six-terminal SOT563 package. Its low VGS(TH) (0.5–1.0V) enables direct drive from 1.8V/2.5V logic, while low RDS(ON) and Ciss support high-efficiency DC-DC conversion and fast-switching load switching.

The device features ESD-protected gates, <100nA IDSS at 20V, and thermal resistance RθJA of 216°C/W on enhanced PCB layout. Its SOA is limited by RDS(ON) at DC and pulse widths ≥10ms, with pulsed current capability up to 5.5A for 10μs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20V - Maximum drain-source blocking voltage for 2-cell Li-ion or 12V system rail protection
RDS(ON) @ VGS = 4.5V0.45Ω - Enables ≤415mW conduction loss at 0.92A, suitable for low-power synchronous rectification
VGS(TH)0.5–1.0V - Ensures full enhancement with 1.8V GPIO or low-voltage microcontroller outputs
Ciss42pF - Reduces gate drive power and speeds switching in high-frequency (>1MHz) converters
tD(OFF)386ns - Supports precise timing control in PWM-driven solenoid or relay drivers
PD @ TA = +25°C0.58W - Allows 0.92A continuous operation with minimal heatsinking on standard FR-4 board
Qg0.6nC - Low gate charge minimizes driver IC stress and enables use with low-current logic buffers

Pinout & Package

Package: SOT563 - ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), 6-terminal, lead-free, RoHS-compliant, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)Gate of Channel 1Independent control input for first MOSFET; accepts logic-level drive down to 1.8V
2 (S1/S2)Common SourceShared source node for both channels; requires low-impedance ground return path
3 (D1)Drain of Channel 1High-side or low-side switch output; routed separately to avoid cross-talk
4 (D2)Drain of Channel 2Second independent load switch terminal; electrically isolated from D1 except via PCB trace
5 (G2)Gate of Channel 2Independent control input for second MOSFET; identical threshold and drive requirements as G1
6 (NC)No ConnectInternally unconnected; must remain floating or grounded per layout guidelines to avoid parasitic coupling

Key Features

FeatureDesign Value
Ultra-low gate thresholdVGS(TH) ≤ 1.0V ensures reliable turn-on from 1.8V/2.5V I/O without level-shifting circuitry
Low RDS(ON) at low VGS0.6Ω @ VGS = 2.5V supports efficient operation in always-on battery monitoring circuits
ESD-protected gateHBM rating >2kV eliminates need for external gate protection diodes in handheld device designs
Low input/output leakageIDSS ≤ 100nA and IGSS ≤ ±1.0μA minimize standby power loss in energy-harvesting systems
Green, halogen-free constructionBr+Cl <1500ppm, Sb <1000ppm meets automotive and industrial environmental compliance mandates

Applications

Battery-Powered Load SwitchingLow-Voltage DC-DC Converter

Use Scenario: Power gating of BLE modules, sensors, or display segments in wearables and IoT nodes.

IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent enable control of two subsystems from a single compact footprint.

Use Value: Sub-1V VGS(TH) allows direct MCU GPIO control; 0.45Ω RDS(ON) limits dropout to <415mV at 0.92A, preserving battery runtime.

Use Scenario: Synchronous rectification in buck converters for portable medical devices operating from 3.3V or 5V rails.

IC Role / Device Role / Timing Role: Low-side switch in discrete synchronous rectifier stage, replacing Schottky diodes to reduce conduction loss.

Use Value: 42pF Ciss and 0.6nC Qg minimize switching losses at 2MHz; RDS(ON) improves efficiency by ≥12% vs. 0.6Ω alternatives.

Solenoid & Relay DriverAutomotive Body Control Module

Use Scenario: Driving 12V automotive relays or small solenoids in smart home actuators and industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-speed, low-leakage switch controlling inductive loads with integrated body diode reverse recovery management.

Use Value: 386ns tD(OFF) enables precise PWM duty cycle control; 0.7–1.2V VSD forward drop protects against flyback voltage overshoot.

Use Scenario: Local power distribution in AEC-Q101-qualified body electronics, including mirror heaters, LED interior lighting, and door lock actuators.

IC Role / Device Role / Timing Role: Dual-function load switch supporting redundant or split-rail control architecture in IATF 16949 production environments.

Use Value: Fully RoHS/halogen-free construction and PPAP-capable supply chain meet Tier-1 OEM sourcing requirements; -55°C to +150°C TJ range ensures reliability under hood conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2020LFG-7Single-channel, 20V, 0.35Ω @ 4.5V, SOT23-6 package; higher RDS(ON) at 2.5V (0.75Ω)Lacks dual-channel integration; requires two devices for same functionalitySelect when board space permits discrete placement and lower gate charge (0.45nC) is prioritized over channel count
AOB2012LDual-channel, 20V, 0.55Ω @ 4.5V, TSOP-6 package; larger footprint (3.05 × 1.6mm), no VGS(TH) < 1V guaranteeHigher thermal resistance (RθJA = 120°C/W) demands more copper areaSelect when higher pulsed current (12A) and robust thermal performance outweigh size constraints

Compared with DMN2710UV, DMN2020LFG-7 offers lower gate charge but doubles component count and PCB area; AOB2012L provides higher surge current handling but sacrifices logic-level drive compatibility and miniaturization-making DMN2710UV optimal for space-constrained, low-voltage, dual-load applications.

Availability

DMN2710UV is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay modules, and low-voltage DC-DC converter designs requiring stable component supply across design-in, prototyping, and volume production phases.

Supply support for DMN2710UV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN2710UV belongs to Diodes' Logic-Level MOSFET product line, engineered specifically for compact, low-power switching in portable, automotive, and industrial control applications where gate drive voltage headroom is constrained.

FAQ

What is the maximum continuous drain current for DMN2710UV at 70°C ambient temperature?

The DMN2710UV supports 0.74A continuous drain current at TA = +70°C with 2oz copper FR-4 PCB and minimum recommended pad layout. This derating reflects thermal limitations due to its 216°C/W RθJA on enhanced layout; actual current depends on board copper area and airflow.

Is DMN2710UV qualified for automotive applications?

DMN2710UV is designed and manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101 in standard form, Diodes offers AEC-Q101-compliant versions upon request with controlled change management and extended testing-contact Diodes or Aetrix for qualification status.

How does the NC pin (Pin 6) affect PCB layout?

Pin 6 is internally unconnected and must be left floating or tied to ground per Diodes' layout guidelines. Connecting it to a signal net may introduce parasitic coupling or EMI; grounding reduces noise susceptibility without affecting electrical performance, provided the ground plane is low-impedance and decoupled.

Can DMN2710UV replace a single-channel MOSFET in existing designs?

Yes-each channel operates independently, so one channel can be used while the other remains unused or grounded. However, unused gate (G2) must be tied to source (S1/S2) to prevent floating, and the NC pin must follow layout rules. The dual configuration adds redundancy or enables dual-load control without increasing footprint.

DMN2710UV-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
920mA (Ta)
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
42pF @ 16V
Power - Max:
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMN2710UV-7 FAQ

1.How can I place an order for DMN2710UV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2710UV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2710UV-7 reliable?

The price and inventory of DMN2710UV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UV-7 is usually 5 days.

3.What payment methods are accepted for DMN2710UV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2710UV-7?

DMN2710UV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2710UV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2710UV-7?

For technical support, including DMN2710UV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UV-7 requirements.

6.How does Aetrix verify that DMN2710UV-7 is sourced from the original manufacturer or authorized distributors?

All DMN2710UV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UV-7 meets industry standards.

7.What is the process for return or replacement of DMN2710UV-7?

All DMN2710UV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2710UV-7 part is unused and in its original packaging.

Return procedure for DMN2710UV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2710UV-7 Tags

  • DMN2710UV-7
  • DMN2710UV-7 PDF
  • DMN2710UV-7 Datasheet
  • DMN2710UV-7 Specifications
  • DMN2710UV-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN2710UV-7
  • Buy DMN2710UV-7
  • DMN2710UV-7 Price
  • DMN2710UV-7 Distributor
  • DMN2710UV-7 Supplier
  • DMN2710UV-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER