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Diodes Incorporated DMN2710UVQ-13

Part No.:
DMN2710UVQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMN2710UVQ-13.pdf
Description:
MOSFET 2N-CH 20V 0.92A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,802

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Product details

Overview

DMN2710UVQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 20V VDSS, 0.45Ω RDS(ON) @ 4.5V VGS, and 0.92A continuous drain current at +25°C. It features ultra-low gate threshold voltage (<1V), AEC-Q101 qualification, and ESD-protected gate-designed for automotive power management such as LED lighting drivers and body control modules.

For engineers reviewing the DMN2710UVQ-13 datasheet, DMN2710UVQ-13 pinout, DMN2710UVQ-13 application, or DMN2710UVQ-13 equivalent, key selection criteria include low-voltage gate drive compatibility (VGS(TH) < 1V), dual-channel integration in ultra-small SOT563, thermal performance under 216°C/W RθJA, and AEC-Q101 compliance for automotive-grade reliability.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single 6-pin SOT563 package, enabling compact high-side/low-side or parallel switching configurations. Its sub-1V gate threshold allows direct interfacing with 1.8V and 2.5V logic controllers without level-shifting.

The device exhibits low dynamic parameters: 42pF Ciss, 0.6nC total gate charge, and fast switching (tD(ON) = 4.9ns, tF = 174ns), supporting high-frequency DC-DC conversion and PWM-controlled loads up to 150°C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - supports 12V automotive systems with margin against load-dump transients
RDS(ON) @ 4.5V 0.45Ω - enables ≤0.38W conduction loss at 0.92A, critical for thermally constrained PCBs
VGS(TH) <1.0V - ensures full enhancement with 1.8V I/O microcontrollers, eliminating external level shifters
Ciss 42pF - reduces gate drive power and improves switching efficiency in high-frequency (>1MHz) applications
RθJA (2oz Cu) 216°C/W - defines thermal derating curve for sustained 0.58W dissipation on standard FR-4 with copper pour
AEC-Q101 Qualified Yes - validated for automotive use per stress test requirements including HTGB, HTRB, and TC1000

Pinout & Package

Package: SOT563 - ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), 6-pin, dual-source configuration with exposed thermal pad (not electrically connected). Molded green compound, matte tin annealed terminals, MSL Level 1.

Pin/Terminal Circuit Role Design Meaning
1 Source 1 Common return path for first MOSFET channel; internally tied to pin 4 in dual-source layout
2 Gate 1 Control input for first N-channel channel; ESD-protected, threshold <1V
3 Drain 1 High-side or low-side switching node for first channel; rated 20V, 0.92A
4 Source 2 Common return path for second MOSFET channel; internally tied to pin 1
5 Gate 2 Independent control input for second N-channel channel; identical VGS(TH) and RDS(ON)
6 Drain 2 Switching node for second channel; electrically isolated from Drain 1, same 20V/0.92A rating

Key Features

Feature Design Value
Dual N-channel integration Two matched MOSFETs in one SOT563 footprint-reduces board area by >40% vs. discrete SOT23-6 solutions
Sub-1V gate threshold VGS(TH) max = 1.0V ensures reliable turn-on with 1.8V logic, eliminating level-shifter ICs and associated BOM cost
Low Qg and Ciss 0.6nC Qg, 42pF Ciss minimize gate drive losses and enable >2MHz switching in buck converters
AEC-Q101 qualification Validated for automotive under PPAP; manufactured in IATF 16949-certified facilities with full traceability
ESD-protected gate HBM rating ≥2kV per JESD22-A114 - prevents field failure during handling and assembly

Applications

Automotive LED Headlamp Driver Body Control Module Load Switch

Use Scenario: PWM dimming of high-brightness LED arrays in headlamps using 12V battery supply.

IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling parallel LED strings; one channel for main beam, one for DRL.

Use Value: Sub-1V VGS(TH) enables direct MCU GPIO control; 0.45Ω RDS(ON) limits self-heating to <0.4W per channel at 0.9A.

Use Scenario: Power sequencing and fault-isolated switching of interior lighting, window motors, and HVAC actuators.

IC Role / Device Role / Timing Role: Dual independent load switches providing overcurrent protection and controlled ramp-up via gate timing.

Use Value: Matched dual channels simplify PCB layout; AEC-Q101 qualification ensures 15-year vehicle lifecycle compliance.

USB-C Power Delivery Sink Industrial Sensor Node Power Gate

Use Scenario: Input power path management in portable automotive accessories accepting USB-C PD up to 20V.

IC Role / Device Role / Timing Role: Dual N-MOSFET array implementing reverse-polarity protection and VBUS switching with fast turn-off.

Use Value: 20V VDSS withstands USB-C PD negotiation spikes; 174ns tF ensures clean transient suppression during hot-plug events.

Use Scenario: Ultra-low-power duty-cycling of environmental sensors (e.g., CO₂, humidity) in battery-operated industrial gateways.

IC Role / Device Role / Timing Role: Low-leakage power gate enabling <100nA system sleep current when sensors are off.

Use Value: IDSS ≤100nA at 20V ensures minimal battery drain over multi-year deployments; SOT563 footprint saves space on dense sensor PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2022LSD-13 20V VDSS, 0.125Ω RDS(ON) @ 4.5V, but SOT23-6 package (larger footprint, higher RθJA = 290°C/W) Higher current capability (2.2A) but unsuitable for space-constrained automotive modules requiring SOT563 Select when higher current and lower RDS(ON) outweigh size constraints and thermal budget
NTJD4152PZ-1G 20V VDSS, 0.55Ω RDS(ON) @ 4.5V, same SOT563, but VGS(TH) = 1.0–2.5V (no guaranteed sub-1V turn-on) Lacks guaranteed low-threshold operation-requires 3.3V logic or gate boosting for full enhancement Select only if system uses ≥3.3V GPIO and AEC-Q101 is not required

Compared with DMN2710UVQ-13, DMN2022LSD-13 offers lower on-resistance but sacrifices board space and thermal efficiency, while NTJD4152PZ-1G matches the package but lacks guaranteed 1.0V VGS(TH) and automotive qualification-making DMN2710UVQ-13 uniquely suited for compact, low-voltage, AEC-Q101-compliant designs.

Availability

DMN2710UVQ-13 is available at Aetrix Electronics and suitable for automotive LED drivers, body control modules, and USB-C power delivery systems requiring stable component supply across extended production lifecycles.

Supply support for DMN2710UVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN2710UVQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, low-voltage power switching in safety-critical vehicle subsystems.

FAQ

Is DMN2710UVQ-13 pin-compatible with other SOT563 dual MOSFETs?

No-pin assignments differ across manufacturers. DMN2710UVQ-13 uses pins 1/4 as shared sources, 2/5 as gates, and 3/6 as drains. Always verify pinout against the official DS45072 schematic before PCB layout. Cross-checking with NTJD4152PZ-1G or DMN2022LSD-13 reveals incompatible terminal mapping despite identical package outline.

What is the maximum safe operating frequency for DMN2710UVQ-13 in PWM applications?

Based on measured tD(OFF) = 386ns and tF = 174ns, the device supports clean switching up to 1.2MHz with appropriate gate drive strength (≤10Ω series resistance). Above this, overlap losses increase significantly-verified via SOA curves in Figure 12 under 100µs pulse conditions.

Does DMN2710UVQ-13 require external gate resistors for automotive EMI compliance?

Yes-datasheet-recommended RG = 10Ω (Figure 11 test condition) suppresses ringing and meets CISPR 25 Class 5 radiated emissions limits in 12V automotive environments. Omitting it causes >30dB overshoot on VDS edges, increasing conducted noise into CAN/LIN bus lines.

Can DMN2710UVQ-13 be used in linear regulation mode?

No-it is optimized for switching operation only. The RDS(ON) variation with temperature (Figure 7) and lack of Safe Operating Area (SOA) data for DC bias preclude linear use. Attempting linear regulation risks thermal runaway above 0.2A due to positive temperature coefficient of on-resistance.

DMN2710UVQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
920mA (Ta)
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
42pF @ 16V
Power - Max:
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMN2710UVQ-13 FAQ

1.How can I place an order for DMN2710UVQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2710UVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2710UVQ-13 reliable?

The price and inventory of DMN2710UVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UVQ-13 is usually 5 days.

3.What payment methods are accepted for DMN2710UVQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UVQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2710UVQ-13?

DMN2710UVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2710UVQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2710UVQ-13?

For technical support, including DMN2710UVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UVQ-13 requirements.

6.How does Aetrix verify that DMN2710UVQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN2710UVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UVQ-13 meets industry standards.

7.What is the process for return or replacement of DMN2710UVQ-13?

All DMN2710UVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UVQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2710UVQ-13 part is unused and in its original packaging.

Return procedure for DMN2710UVQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2710UVQ-13 Tags

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