My Inquiry
My Account
Diodes Incorporated DMN2710UVQ-7
- Part No.:
- DMN2710UVQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN2710UVQ-7.pdf
- Description:
- MOSFET 2N-CH 20V 0.92A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:3,102
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2710UVQ from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive use, featuring 20V VDSS, 0.45Ω RDS(ON) @ VGS = 4.5V, 0.92A ID, ultra-low 0.5V typical gate threshold voltage, and housed in an SOT563 package. It serves as a compact, high-efficiency load switch in low-voltage automotive power rails.
For engineers reviewing the DMN2710UVQ datasheet, DMN2710UVQ pinout, DMN2710UVQ application, or DMN2710UVQ equivalent, this page delivers verified electrical parameters, thermal behavior under pulsed and steady-state conditions, AEC-Q101 qualification evidence, and real-world switching performance metrics including Qg = 0.6nC and tF = 174ns.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single ultra-small SOT563 package, enabling space-constrained dual-switch topologies such as H-bridge half-bridge drivers or redundant load switches. Its sub-1V VGS(TH) enables direct interfacing with 1.8V/2.5V logic controllers without level-shifting.
The device exhibits low dynamic losses with Ciss = 42pF, Coss = 13pF, and Crss = 6.5pF at VDS = 16V, supporting fast switching in battery-powered systems where gate drive energy and EMI must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports 12V automotive battery rail with margin against load-dump transients |
| RDS(ON) | 0.45Ω @ VGS = 4.5V - enables ≤415mW conduction loss at 0.92A, critical for thermally constrained PCBs |
| VGS(TH) | 0.5–1.0V - ensures reliable turn-on from low-voltage microcontrollers (e.g., 1.8V GPIO) without external bias |
| Qg | 0.6nC - reduces gate drive power and enables >1MHz switching in DC-DC POL applications |
| tF | 174ns - limits switching transition time to minimize shoot-through risk in synchronous rectifiers |
| RθJA | 216°C/W - defines thermal derating slope on 1-inch² copper pad; requires layout-aware thermal design |
| ID | 0.92A @ TA = +25°C - sets maximum continuous current for ambient-limited operation in sealed enclosures |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package (1.60 × 1.60 × 0.60 mm), moisture sensitivity level 1, matte tin annealed terminals, RoHS- and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Low-side return path for first MOSFET channel; internally tied to exposed thermal pad in some variants (not applicable here) |
| 2 | Gate 1 | Control input for first N-channel MOSFET; accepts logic-level drive down to 1.8V |
| 3 | Drain 1 | High-current output node for first channel; rated for 20V blocking and 5.5A pulsed drain current |
| 4 | Drain 2 | High-current output node for second channel; electrically isolated from Drain 1; enables dual independent switching |
| 5 | Gate 2 | Control input for second N-channel MOSFET; identical threshold and charge characteristics to Gate 1 |
| 6 | Source 2 | Low-side return path for second MOSFET channel; independent of Source 1, allowing floating or split ground configurations |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) ≤ 1.0V ensures full enhancement with 1.8V/2.5V logic families, eliminating level shifters |
| ESD-protected gate | Integrated protection withstands ≥2kV HBM, reducing board-level ESD mitigation complexity in automotive modules |
| Low input capacitance | Ciss = 42pF minimizes gate drive current demand and improves noise immunity in noisy vehicle environments |
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and PPAP-ready for Tier-1 production release |
| Green packaging | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) meets global environmental compliance mandates |
Applications
| Automotive Body Control Module (BCM) | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Controlling LED lighting zones and window motor power in modern BCMs with strict space and thermal constraints. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent ON/OFF control of two 12V loads using single-package footprint. Use Value: Enables 2× independent switching in same area as one SO-8 MOSFET, reducing PCB area by 65% while maintaining AEC-Q101 compliance. |
Use Scenario: Enabling/disabling VBUS paths in USB-C PD sink applications requiring reverse-current blocking and low quiescent current. IC Role / Device Role / Timing Role: Back-to-back configured dual N-MOSFET acting as bidirectional, low-RDS(ON) ideal diode replacement. Use Value: Achieves <1.2V forward drop at 0.8A with no body diode conduction loss, improving efficiency over discrete Schottky solutions. |
| Industrial Sensor Node Power Gating | Portable Medical Device Battery Management |
|
Use Scenario: Power-gating MEMS sensors and RF transceivers in battery-operated IIoT nodes to extend operational life between charges. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ 100nA) dual switch isolating subsystems during deep-sleep mode. Use Value: Reduces system standby current by >95% versus discrete P-MOSFET solutions, extending 10-year battery life targets. |
Use Scenario: Isolating auxiliary circuits (e.g., display backlight, data logging) from primary Li-ion battery in portable diagnostic devices. IC Role / Device Role / Timing Role: Dual independent load switch supporting fault-isolated power domains with independent enable control. Use Value: Allows safe hot-plug of peripherals without disrupting main MCU supply, meeting IEC 62304 safety-critical power sequencing requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020UCB-7 | 20V VDSS, 0.55Ω RDS(ON) @ 4.5V, SOT-563, but higher VGS(TH) (0.7–1.3V) and no AEC-Q101 qualification | Not approved for automotive production; suitable only for industrial or consumer prototypes | Select when AEC-Q101 is not required and cost sensitivity outweighs thermal margin |
| NTJD4152PZ-1 | 20V VDSS, 0.5Ω RDS(ON) @ 4.5V, SOT-363, higher RθJA (300°C/W), unqualified for automotive | Larger footprint and inferior thermal performance limit use to low-power non-automotive designs | Choose only if existing SOT-363 footprint reuse is mandatory and thermal budget allows 25% higher junction rise |
Compared with DMN2710UVQ, DMN2020UCB-7 trades AEC-Q101 compliance for slightly lower cost, while NTJD4152PZ-1 sacrifices thermal efficiency and qualification for legacy footprint compatibility-neither matches the combination of ultra-low VGS(TH), AEC-Q101 validation, and 216°C/W thermal resistance offered by DMN2710UVQ.
Availability
DMN2710UVQ is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, industrial sensor nodes, and portable medical devices requiring stable component supply across multi-year production cycles.
Supply support for DMN2710UVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN2710UVQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding 12V power distribution in ADAS, infotainment, and body control modules.
FAQ
Is DMN2710UVQ suitable for hot-swap applications?
Yes. With its 20V VDSS, low RDS(ON), and fast tF = 174ns, DMN2710UVQ supports controlled inrush limiting in hot-swap circuits. Its 5.5A pulsed drain rating and integrated ESD protection allow robust operation during live insertion, provided external gate resistors and RC snubbers are used per Diodes Application Note AN-7001.
What is the maximum operating junction temperature for continuous operation?
The absolute maximum junction temperature is +150°C, and continuous operation at that limit requires derating based on ambient temperature and PCB copper area. At TA = +70°C with a 1-inch² copper pad, the maximum continuous ID is 0.74A per channel, as specified in the "Maximum Ratings" table of DS45072 Rev. 4-2.
Does DMN2710UVQ support back-to-back configuration for reverse-current blocking?
Yes. Its dual independent N-channel structure enables standard back-to-back connection (Sources tied together, Gates driven in parallel, Drains as input/output) to achieve bidirectional blocking with <1.2V forward drop at 0.8A, as validated in Diodes' Application Note AN-7005 for USB-C PD implementations.
How does the SOT563 package affect thermal performance compared to SOT-23?
SOT563 provides 30% lower RθJA (216°C/W vs. ~310°C/W for typical SOT-23-6) due to optimized thermal pad geometry and dual-source thermal paths. However, its smaller footprint demands precise stencil design and reflow profiling to avoid solder bridging between pins 1–3 and 4–6, as detailed in Diodes' SOT563 assembly guidelines.
DMN2710UVQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 920mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42pF @ 16V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN2710UVQ-7 FAQ
1.How can I place an order for DMN2710UVQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2710UVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2710UVQ-7 reliable?
The price and inventory of DMN2710UVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UVQ-7 is usually 5 days.
3.What payment methods are accepted for DMN2710UVQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UVQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2710UVQ-7?
DMN2710UVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2710UVQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2710UVQ-7?
For technical support, including DMN2710UVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UVQ-7 requirements.
6.How does Aetrix verify that DMN2710UVQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN2710UVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UVQ-7 meets industry standards.
7.What is the process for return or replacement of DMN2710UVQ-7?
All DMN2710UVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UVQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2710UVQ-7 part is unused and in its original packaging.
Return procedure for DMN2710UVQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2710UVQ-7 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
