Diodes Incorporated DMN2710UWQ-13
- Part No.:
- DMN2710UWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN2710UWQ-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT323 T&R
- Quantity:
- Payment:

- Shipping:

Inventory:8,656
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Product details
Overview
DMN2710UWQ-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in SOT323 package, rated for 0.9A continuous drain current at VGS = 4.5V, with RDS(ON) = 0.45Ω (max), 0.13Ω (typ), and AEC-Q101 qualified for automotive power management. It serves as a low-voltage load switch in DC-DC converter synchronous rectification stages and battery protection circuits.
For engineers reviewing the DMN2710UWQ-13 datasheet, DMN2710UWQ-13 pinout, DMN2710UWQ-13 application, or DMN2710UWQ-13 equivalent, key selection criteria include gate threshold voltage (0.5–1.0V), low input capacitance (Ciss = 42pF), fast switching (tD(ON) = 4.9ns), thermal resistance (RθJA = 268°C/W), and automotive qualification status.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining robust body diode performance (VSD = 0.7–1.2V) and low Qg (0.6nC). Its 1.8V logic-level gate drive enables direct interfacing with 1.8V/2.5V/3.3V microcontrollers without level shifting.
The device operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 5A. Its SOA curve confirms safe operation under single-pulse conditions up to 100ms at VDS = 10V and ID = 0.9A, with RDS(ON) drift limited to <1.3× nominal at 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum blocking voltage for 12V rail applications with margin against transients. |
| RDS(ON) @ 4.5V | 0.45Ω (max), 0.13Ω (typ) - Enables ≤450mW conduction loss at 1A, critical for thermally constrained SOT323 layouts. |
| ID (continuous) | 0.9A @ TA = 25°C - Supports compact power switches in space-limited consumer and automotive modules. |
| Qg | 0.6nC - Reduces gate drive power and enables >1MHz switching in high-efficiency buck converters. |
| Ciss | 42pF - Minimizes Miller effect and improves noise immunity in fast-switching digital load control. |
| VGS(TH) | 0.5–1.0V - Ensures reliable turn-on with 1.8V I/O domains and reduces shoot-through risk in half-bridge configurations. |
| tD(ON) | 4.9ns - Enables precise timing control in PWM-driven power sequencing and LED dimming circuits. |
Pinout & Package
Package: SOT323 - Surface-mount plastic package with 0.65mm lead pitch, 0.027g mass, UL 94V-0 rating, and matte tin-plated copper leadframe for RoHS-compliant soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts logic-level signals (1.8–4.5V); low Ciss ensures minimal drive energy and fast edge response. |
| S (Source) | Reference node / return path | Internally connected to substrate; used as common reference for gate drive and current sensing in low-side switch topologies. |
| D (Drain) | Power output terminal | Carries switched load current; designed for bidirectional conduction when body diode is active during freewheeling phases. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power systems including body control modules and infotainment power rails. |
| Low RDS(ON) at 2.5V VGS | 0.6Ω max enables use with 2.5V GPIOs in portable electronics without external level shifters. |
| Ultra-low Qgd/Qgs ratio | 0.1nC/0.1nC minimizes Miller plateau duration and improves EMI profile in high-dV/dt environments. |
| Green compound packaging | Halogen- and antimony-free (<900ppm Br+Cl, <1000ppm Sb) meets automotive OEM environmental requirements. |
| Thermal stability | RDS(ON) increases only 1.2× from –55°C to +150°C, ensuring predictable conduction loss across vehicle operating range. |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Low-side switching of 12V lighting loads (LED dome lights, courtesy lamps) in BCMs with CAN/LIN communication. IC Role / Device Role / Timing Role: Load switch controlling current path to lamp array; operates in on/off mode with <10µs transition time. Use Value: 0.45Ω RDS(ON) limits power dissipation to <400mW at 0.9A, eliminating need for heatsinking in sealed plastic housings. |
Use Scenario: VBUS path control in USB-C receptacles supporting 5V/3A power delivery negotiation. IC Role / Device Role / Timing Role: Bidirectional power switch enabling source/sink role swapping; body diode conducts reverse current during CC logic detection. Use Value: 0.7V typical VSD ensures <210mW forward drop at 3A, meeting USB PD 3.0 voltage tolerance budgets. |
| Portable Medical Sensor Node | Industrial IoT Edge Controller |
Use Scenario: Power gating of BLE radio and analog sensor front-end in battery-powered wearable health monitors. IC Role / Device Role / Timing Role: High-side or low-side enable switch activated by MCU GPIO; duty-cycled to extend battery life. Use Value: 100nA IDSS leakage preserves >99% standby current budget in multi-week sleep cycles. |
Use Scenario: Isolation of 24V fieldbus interface circuitry (RS-485, CAN FD) during firmware updates or fault recovery. IC Role / Device Role / Timing Role: Fault-tolerant power switch with fast turn-off (tF = 174ns) to prevent bus contention during hot-swap events. Use Value: 5A pulsed rating allows safe handling of transient surge currents from ESD or inductive kickback. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2021UWQ-7 | RDS(ON) = 0.35Ω @ 4.5V, ID = 1.1A, same SOT323 package | Higher current capability suits 5V/1A USB ports but requires higher gate charge (0.8nC) | Select when ≥1A continuous load current is required and gate drive strength permits higher Qg. |
| AO3414 | RDS(ON) = 0.55Ω @ 4.5V, non-AEC-Q101, same footprint | Lacks automotive qualification and has 20% higher RDS(ON), limiting thermal headroom | Acceptable for cost-sensitive industrial controls where AEC-Q101 is not mandated. |
Compared with DMN2710UWQ-13, DMN2021UWQ-7 delivers lower conduction loss at higher current but increases gate drive burden, while AO3414 trades qualification and efficiency for lower unit cost in non-automotive designs.
Availability
DMN2710UWQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, portable medical sensors, and industrial IoT edge controllers requiring stable component supply and long-term lifecycle support.
Supply support for DMN2710UWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN2710UWQ belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for low-voltage, high-efficiency power switching in space-constrained automotive and portable electronics.
FAQ
Is DMN2710UWQ-13 suitable for high-frequency PWM applications?
Yes - with tD(ON) = 4.9ns, tF = 174ns, and Qg = 0.6nC, it supports switching frequencies up to 2MHz in buck converters. Its low Ciss (42pF) and Crss (6.5pF) minimize Miller-induced oscillation, making it appropriate for digitally controlled LED drivers and Class-D audio amplifiers.
What is the maximum PCB copper area needed for thermal management at 0.9A continuous?
For continuous 0.9A operation at ambient 70°C, Diodes recommends a minimum 1-inch² 2oz copper pad connected to the SOT323 drain pad per Note 6. This achieves RθJA = 212°C/W, limiting junction temperature rise to ~190°C - within the 150°C absolute max when derated per SOA curves.
Does DMN2710UWQ-13 support bidirectional current flow?
Yes - its intrinsic body diode enables reverse current conduction from source to drain. With VSD = 0.7–1.2V at 150mA, it functions as a freewheeling path in synchronous buck topologies and reverse-polarity protection circuits without external diodes.
Can DMN2710UWQ-13 be used in linear regulation mode?
No - its RDS(ON) variation with temperature (1.3× from –55°C to +150°C) and limited SOA at DC bias make it unsuitable for linear pass applications. The device is optimized for switching operation only; linear use risks thermal runaway above 100mW dissipation.
DMN2710UWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 470mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN2710UWQ-13 FAQ
1.How can I place an order for DMN2710UWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2710UWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2710UWQ-13 reliable?
The price and inventory of DMN2710UWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2710UWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN2710UWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2710UWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2710UWQ-13?
DMN2710UWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2710UWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2710UWQ-13?
For technical support, including DMN2710UWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2710UWQ-13 requirements.
6.How does Aetrix verify that DMN2710UWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN2710UWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2710UWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN2710UWQ-13?
All DMN2710UWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2710UWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2710UWQ-13 part is unused and in its original packaging.
Return procedure for DMN2710UWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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