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Diodes Incorporated DMN2990UDJ-7
- Part No.:
- DMN2990UDJ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-963
- Datasheet:
-
DMN2990UDJ-7.pdf
- Description:
- MOSFET 2N-CH 20V 0.45A SOT963
- Quantity:
- Payment:
- Shipping:
Inventory:14,175
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Product details
Overview
DMN2990UDJ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT963 package, rated for 20V V(BR)DSS, 0.99Ω RDS(ON) at VGS = 4.5V/100mA, and 450mA continuous drain current at TA = 25°C. It features ultra-low gate threshold voltage (≤1.0V), low input capacitance (27.6pF), and AEC-Q101 qualification - deployed in compact DC-DC converters and power management switches where space and low-voltage drive are critical.
For engineers reviewing the DMN2990UDJ-7 datasheet, DMN2990UDJ-7 pinout, DMN2990UDJ-7 application, or DMN2990UDJ-7 equivalent, key selection criteria include verified RDS(ON) vs. VGS down to 1.2V, dual-channel thermal coupling in 1mm × 1mm footprint, gate charge (Qg = 0.5nC), and ESD-protected gate with ±8V VGSS rating.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single ultra-small SOT963 package, sharing common source terminals per channel (S1/G1/D1 and S2/G2/D2). Its 1.0V max VGS(TH) enables direct interfacing with 1.8V and 2.5V logic, while low Crss (2.8pF) and fast switching (tD(ON) = 4.0ns, tF = 6.4ns) support high-frequency power control.
The device operates across –55°C to +150°C junction temperature, with RDS(ON) normalized variation <1.2× over full range at VGS = 4.5V/300mA. Thermal resistance RθJA is 360°C/W on FR-4 PCB with minimum pad layout, limiting steady-state PD to 350mW at TA = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum blocking voltage before avalanche conduction; sets upper limit for DC-DC input or load-switch bus voltage. |
| RDS(ON) @ VGS = 4.5V | 0.99Ω max - Confirmed at ID = 100mA; determines I²R loss in 450mA continuous operation at room temperature. |
| VGS(TH) | 0.4–1.0V - Ensures turn-on with 1.2V logic; enables use in battery-powered systems with declining supply rails. |
| Ciss | 27.6pF - Input capacitance at VDS = 16V; directly impacts gate drive strength requirement and switching transition time. |
| Qg | 0.5nC - Total gate charge at VGS = 4.5V/VDS = 10V; defines minimum energy needed per switching cycle for driver sizing. |
| TJ Range | –55°C to +150°C - Validated operating range per AEC-Q101; supports under-hood automotive and industrial ambient conditions. |
Pinout & Package
Package: SOT963 - ultra-compact 1.0mm × 1.0mm × 0.45mm surface-mount outline with 6 terminals, matte tin-plated copper leadframe, and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input for first N-MOSFET; referenced to S1; requires no level-shifting for 1.8V logic. |
| S1 | Source of Channel 1 | Common return path for Channel 1; electrically isolated from S2 unless externally tied. |
| D1 | Drain of Channel 1 | High-side or low-side switching node; rated for 20V and 450mA continuous (TA = 25°C). |
| G2 | Gate of Channel 2 | Independent control input for second N-MOSFET; identical electrical specs to G1. |
| S2 | Source of Channel 2 | Common return path for Channel 2; not internally connected to S1. |
| D2 | Drain of Channel 2 | Second independent switching node; enables dual-path load control or complementary topology. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two fully isolated enhancement-mode MOSFETs in one 1mm² footprint - reduces board area by >50% vs. discrete SOT-23 duals. |
| Low VGS(TH) ≤1.0V | Guaranteed turn-on with 1.2V supply - eliminates need for gate boosters in coin-cell or Li-ion (2.5–3.6V) applications. |
| ESD-protected gate | Withstands ≥2kV HBM per JESD22-A114 - improves manufacturing yield and field reliability without external TVS. |
| AEC-Q101 qualified | Validated for automotive power management - includes stress testing for temperature cycling, HTOL, and ESD. |
| Green, lead-free construction | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) - meets global environmental compliance mandates. |
Applications
| USB Type-C Power Delivery Switching | Wearable Device Load Management |
|---|---|
Use Scenario: Dual-path switching for VBUS and CC line control in portable USB-C accessories. IC Role / Device Role / Timing Role: Dual N-MOSFET performs bidirectional load switch and CC logic-level translation. Use Value: 1.0V VGS(TH) ensures reliable turn-on from 1.8V microcontroller GPIO; 0.45mm profile fits sub-3mm-thick wearables. |
Use Scenario: Independent enable control of sensor array and BLE radio subsystems in hearables. IC Role / Device Role / Timing Role: Dual-channel power gating isolates leakage paths during deep-sleep modes. Use Value: 0.99Ω RDS(ON) at 4.5V minimizes dropout in 3.3V rail; 350mW PD allows concurrent channel operation without derating. |
| Automotive Body Control Module (BCM) | Industrial IoT Sensor Node Power Sequencing |
Use Scenario: Low-side switching of LED indicators and small solenoids in AEC-Q101-compliant BCMs. IC Role / Device Role / Timing Role: Dual N-MOSFET replaces discrete transistors for redundant status outputs and diagnostics. Use Value: Qualified to AEC-Q101 and rated for TJ = 150°C - sustains operation in engine bay environments without heatsinking. |
Use Scenario: Controlled power-up sequence for analog front-end and MCU in battery-operated edge sensors. IC Role / Device Role / Timing Role: Dual gate-controlled switch sequences biasing of op-amps and ADC references. Use Value: Matched RDS(ON) tracking between channels ensures consistent timing across supply rails; low Ciss avoids signal coupling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UVT-7 | Single-channel, same SOT963 package; 20V, 1.2Ω @ VGS = 2.5V, higher RDS(ON) at low VGS. | Lacks dual-channel integration - requires two units for same functionality; increases layout area and BOM count. | Select when only one switch is needed and cost-per-channel is prioritized over integration. |
| AO6401 | SO-8 dual N-MOSFET; 30V, 32mΩ @ VGS = 10V, but VGS(TH) = 1.5V min - not compatible with 1.8V logic. | Higher RDS(ON) at low gate drive and larger 5mm × 6mm footprint - unsuitable for space-constrained wearables. | Choose only for higher-voltage (>20V) or higher-current (>1A) applications where gate drive voltage ≥3.3V is guaranteed. |
Compared with DMN2990UDJ-7, DMN2053UVT-7 sacrifices integration for lower unit cost, while AO6401 trades size and low-VGS compatibility for higher voltage rating and lower on-resistance at 10V drive - neither matches the combination of 1.0V VGS(TH), dual-channel SOT963 packaging, and AEC-Q101 qualification.
Availability
DMN2990UDJ-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, wearable device load management, and automotive body control applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for DMN2990UDJ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN2990UDJ-7 belongs to Diodes' "Ultra-Small Signal MOSFET" product line, engineered specifically for space-constrained, low-voltage power management in portable and automotive electronics where miniaturization and logic-level compatibility are essential.
FAQ
What is the maximum continuous drain current for DMN2990UDJ-7 at 70°C ambient?
At TA = +70°C, the continuous drain current is 350mA when VGS = 4.5V and 220mA when VGS = 1.8V, as specified in the Absolute Maximum Ratings table. Derating follows the thermal resistance RθJA = 360°C/W on FR-4 with minimum pad layout - actual current must be reduced if PCB copper area or airflow is limited.
Is DMN2990UDJ-7 pin-compatible with any other dual MOSFET in SOT963?
No SOT963 dual N-MOSFET from Diodes or competing manufacturers shares identical pinout (G1/S1/D1/G2/S2/D2) and electrical specs. The SOT963 pin assignment is proprietary to this device family; substitution requires schematic and layout revision due to terminal ordering and internal isolation structure.
Does DMN2990UDJ-7 include integrated body diodes, and what is their forward voltage?
Yes - each channel includes an inherent parasitic body diode. At IS = 150mA and VGS = 0V, the typical forward voltage VSD is 0.6V (max 1.0V), as measured per the Electrical Characteristics table. This enables synchronous rectification or reverse-current blocking in low-side configurations.
Can DMN2990UDJ-7 be used in linear regulation mode?
No - it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve (Fig. 12) shows only pulsed operation up to 800mA for ≤10μs; sustained linear use would exceed thermal limits and cause premature failure due to lack of SOA derating data beyond pulse conditions.
DMN2990UDJ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-963
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 450mA
- Rds On (Max) @ Id, Vgs:
- 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27.6pF @ 16V
- Power - Max:
- 350mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-963
DMN2990UDJ-7 FAQ
1.How can I place an order for DMN2990UDJ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2990UDJ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2990UDJ-7 reliable?
The price and inventory of DMN2990UDJ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2990UDJ-7 is usually 5 days.
3.What payment methods are accepted for DMN2990UDJ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2990UDJ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2990UDJ-7?
DMN2990UDJ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2990UDJ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2990UDJ-7?
For technical support, including DMN2990UDJ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2990UDJ-7 requirements.
6.How does Aetrix verify that DMN2990UDJ-7 is sourced from the original manufacturer or authorized distributors?
All DMN2990UDJ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2990UDJ-7 meets industry standards.
7.What is the process for return or replacement of DMN2990UDJ-7?
All DMN2990UDJ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2990UDJ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2990UDJ-7 part is unused and in its original packaging.
Return procedure for DMN2990UDJ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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