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Diodes Incorporated DMN2990UFB-7B

Part No.:
DMN2990UFB-7B
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-UFDFN
Datasheet:
AetrixDMN2990UFB-7B.pdf
Description:
MOSFET N-CH 20V 780MA 3DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,450

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Product details

Overview

DMN2990UFB-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in X1-DFN1006-3 package, featuring RDS(ON) = 0.99Ω @ VGS = 4.5V, ID = 0.78A at TA = +25°C, and VGS(TH) = 0.4–1.0V - optimized for low-voltage power management in space-constrained battery-powered systems.

For engineers reviewing the DMN2990UFB-7B datasheet, DMN2990UFB-7B pinout, DMN2990UFB-7B application, or DMN2990UFB-7B equivalent, key selection criteria include gate threshold voltage compatibility with 1.8V/2.5V logic, ultra-small footprint constraints, RDS(ON) vs. temperature stability, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 4.5ns, tF = 12ns) and low input capacitance (Ciss = 31pF). Its ESD-protected gate and ultra-low VGS(TH) enable direct drive from low-voltage microcontrollers without level-shifting.

The device integrates a body diode with VSD = 0.8–1.0V at IS = 150mA and exhibits normalized RDS(ON) variation of <1.3× across –55°C to +150°C, supporting stable operation in thermally aggressive environments like portable chargers and DC-DC converter hot spots.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - supports input rails up to 16V with 20% margin against transients in USB PD and Li-ion charging paths.
RDS(ON) 0.99Ω @ VGS = 4.5V - enables ≤780mW conduction loss at 0.78A, critical for thermal budget in 1mm²-area PCB layouts.
VGS(TH) 0.4–1.0V - ensures turn-on with 1.2V logic or partially discharged batteries, eliminating need for gate drivers in low-power PMICs.
Ciss 31pF - reduces gate drive energy (Qg = 0.41nC), lowering switching losses in high-frequency (>1MHz) buck converters.
TJ Range –55°C to +150°C - qualified per AEC-Q101, enabling use in under-hood automotive modules and industrial edge sensors.
PD 0.52W (FR-4 board) - defines maximum continuous power dissipation with standard pad layout; derates to 0.92W at 1% duty cycle.

Pinout & Package

X1-DFN1006-3 is an ultra-compact 1.0 × 0.6 mm, 3-terminal plastic package with exposed drain pad for thermal relief. Pin 1 (Gate) is marked by bar on top side; Drain and Source are on opposite edges with Gate centered.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control electrode Low-threshold input (VGS(TH) ≤ 1.0V) accepts direct drive from 1.8V GPIO; ESD-protected (HBM > 2kV).
Drain (D) High-side current path Exposed copper pad on bottom surface - must be soldered to thermal pad for RθJA = 137°C/W performance.
Source (S) Reference node Connected to ground or low-side return; forms body diode anode - enables synchronous rectification in buck topology.

Key Features

Feature Design Value
Ultra-small footprint X1-DFN1006-3 (1.0 × 0.6 mm) saves >60% board area vs. SOT-23, enabling dense multi-rail power sequencing in wearables.
Low gate charge Qg = 0.41nC - reduces gate driver power consumption and enables >5MHz switching in compact DC-DC regulators.
Thermal robustness RθJA = 137°C/W with minimum pad layout - sustains 0.78A continuous current at ambient ≤60°C without heatsink.
AEC-Q101 qualified Qualified for automotive applications including infotainment power rails and ADAS sensor bias supplies.

Applications

Battery Charging Circuit USB Power Delivery Switch

Use Scenario: Low-voltage path control in single-cell Li-ion charger ICs where input voltage ranges from 3.0V (depleted battery) to 5.5V (USB host).

IC Role / Device Role: High-side load switch managing charge path between USB port and battery protection FET.

Use Value: VGS(TH) ≤ 1.0V ensures reliable turn-on even at 3.0V input; RDS(ON) = 0.99Ω limits voltage drop to <770mV at 0.78A.

Use Scenario: Input power selection in dual-source USB-C devices (e.g., laptop docking stations with AC adapter + USB PD fallback).

IC Role / Device Role: Low-loss OR-ing switch selecting between two 5V sources before buck converter input.

Use Value: Ciss = 31pF minimizes source-to-drain coupling during fast source switchover; 0.001g weight aids mechanical shock resistance.

DC-DC Converter Synchronous Rectifier Portable Sensor Node Power Gate

Use Scenario: Bottom-FET in 1.8V-output buck converter operating at 2MHz for FPGA core rail in handheld test equipment.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light loads.

Use Value: Body diode VSD = 0.8V enables low-loss freewheeling; fast tF = 12ns reduces cross-conduction loss during dead-time.

Use Scenario: Power gating for BLE SoC and environmental sensors in battery-operated IoT nodes with 10-year target lifetime.

IC Role / Device Role: Low-leakage (IDSS ≤ 100nA) disconnect switch isolating subsystems during deep sleep.

Use Value: Ultra-low IDSS extends battery life by limiting quiescent drain to <1µA per switched rail over full temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK3-7 RDS(ON) = 0.45Ω @ VGS = 4.5V, but larger X2-DFN2020-6 package (2.0 × 2.0 mm); higher Qg = 1.2nC. Better conduction efficiency at >1A, but unsuitable for sub-1mm² footprints; requires larger gate drive capability. Select when thermal headroom exists and lower RDS(ON) outweighs size penalty - e.g., industrial power modules.
AO3400 Same X1-DFN1006-3 package, but VGS(TH) = 0.7–1.4V and RDS(ON) = 1.05Ω @ 4.5V; not AEC-Q101 qualified. Lacks guaranteed low-threshold operation below 1.2V; no automotive reliability certification. Acceptable for cost-sensitive consumer electronics where AEC-Q101 and 1.8V drive are not required.

Compared with DMN2990UFB-7B, DMN2004LK3-7 trades size for lower conduction loss and higher current handling, while AO3400 sacrifices AEC-Q101 compliance and low-VGS(TH) for broader commercial availability - making DMN2990UFB-7B optimal for space- and voltage-constrained automotive and portable designs.

Availability

DMN2990UFB-7B is available at Aetrix Electronics and suitable for battery charging circuits, USB power delivery switches, and DC-DC converter synchronous rectifiers requiring stable component supply with AEC-Q101 assurance and ultra-compact packaging.

Supply support for DMN2990UFB-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The DMN2990UFB-7B belongs to Diodes' ultra-low-profile DFN MOSFET product line, engineered specifically for miniaturized battery-powered systems demanding AEC-Q101 reliability, 1.8V logic compatibility, and thermal efficiency in sub-1mm² footprints.

FAQ

What is the maximum continuous drain current for DMN2990UFB-7B at 70°C ambient?

The maximum continuous drain current is 0.62A at TA = +70°C with VGS = 4.5V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced power dissipation (PD = 0.52W) and junction-to-ambient thermal resistance (RθJA = 239°C/W) on FR-4 PCB with minimum pad layout.

Does DMN2990UFB-7B require a gate resistor for ESD protection?

No external gate resistor is required for ESD protection - the device integrates on-chip gate protection diodes rated for >2kV HBM per JESD22-A114. However, a small series resistor (≤10Ω) is recommended in high-noise environments to dampen ringing during fast switching transitions.

Can DMN2990UFB-7B be used in reverse-biased configurations (source-to-drain conduction)?

Yes - its integrated body diode supports source-to-drain conduction with VSD = 0.8–1.0V at IS = 150mA and maximum continuous body diode current of 0.72A. This enables use in bidirectional power paths and synchronous rectification where controlled reverse conduction is required.

Is the X1-DFN1006-3 package compatible with standard reflow profiles for lead-free soldering?

Yes - the package is fully RoHS-compliant and qualified for IPC/JEDEC J-STD-020 moisture sensitivity Level 1, allowing use with standard lead-free reflow profiles (peak temperature ≤260°C). The NiPdAu-plated terminals ensure reliable solderability per MIL-STD-202, Method 208.

DMN2990UFB-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
780mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs:
0.41 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
31 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
520mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X1-DFN1006-3

DMN2990UFB-7B FAQ

1.How can I place an order for DMN2990UFB-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2990UFB-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2990UFB-7B reliable?

The price and inventory of DMN2990UFB-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2990UFB-7B is usually 5 days.

3.What payment methods are accepted for DMN2990UFB-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2990UFB-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2990UFB-7B?

DMN2990UFB-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2990UFB-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2990UFB-7B?

For technical support, including DMN2990UFB-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2990UFB-7B requirements.

6.How does Aetrix verify that DMN2990UFB-7B is sourced from the original manufacturer or authorized distributors?

All DMN2990UFB-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2990UFB-7B meets industry standards.

7.What is the process for return or replacement of DMN2990UFB-7B?

All DMN2990UFB-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2990UFB-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2990UFB-7B part is unused and in its original packaging.

Return procedure for DMN2990UFB-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2990UFB-7B Tags

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