Diodes Incorporated DMN2990UFO-7B
- Part No.:
- DMN2990UFO-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2990UFO-7B.pdf
- Description:
- MOSFET N-CH 20V 750MA 3DFN
- Quantity:
- Payment:

- Shipping:

Inventory:880
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Product details
Overview
DMN2990UFO-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in a 0.6mm × 0.4mm X2-DFN0604-3 package, featuring 0.99Ω RDS(ON) at VGS = 4.5V, 1.0V max gate threshold voltage, and ESD-protected gate. It serves as a low-voltage load switch or analog switch in space-constrained portable power rails and battery management circuits.
For engineers reviewing the DMN2990UFO-7B datasheet, DMN2990UFO-7B pinout, DMN2990UFO-7B application, or DMN2990UFO-7B equivalent, key selection criteria include ultra-low VGS(TH), sub-1Ω on-resistance at 4.5V drive, thermal resistance of 150°C/W (steady-state), and compatibility with 1.8V logic-level control in compact DFN packaging.
Technical Context
This MOSFET employs planar trench-gate technology optimized for low gate charge (Qg = 0.41nC) and fast switching (tD(ON) = 4.5ns, tF = 12ns), enabling high-efficiency operation in DC-DC converter synchronous rectification and load-switching topologies. Its 1.0V max VGS(TH) ensures reliable turn-on with 1.8V I/O rails.
The device integrates an intrinsic body diode with VSD = 0.6V at 150mA and exhibits normalized RDS(ON) variation ≤1.2× across –55°C to +150°C junction temperature, supporting stable performance in thermally variable environments like wearable electronics and IoT sensor nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports input rails up to 16V with 25% margin against transients |
| RDS(ON) @ VGS = 4.5V | 0.99Ω - enables <750mA continuous current with <0.56W conduction loss at full load |
| VGS(TH) max | 1.0V - guarantees turn-on with 1.8V GPIO without level-shifting circuitry |
| Qg | 0.41nC - reduces gate-drive power and enables >1MHz switching in compact converters |
| RθJA (steady-state) | 150°C/W - allows 840mW power dissipation on standard FR-4 with 2oz copper thermal bias |
| Ciss | 31pF - minimizes Miller effect and improves noise immunity in high-dV/dt environments |
Pinout & Package
Package: X2-DFN0604-3, 0.6mm × 0.4mm × 0.36mm body, 3-terminal leadless plastic package with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output | Connected to internal die backside; electrically and thermally tied to exposed pad for low-inductance, high-current routing |
| Source (S) | Current return path | Common reference node for gate drive and load return; forms low-impedance ground loop with PCB copper pour |
| Gate (G) | Control terminal | ESD-protected input requiring <0.41nC charge for full enhancement; sensitive to <±8V absolute rating |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) ≤ 1.0V enables direct interface with 1.8V microcontrollers without level shifters |
| Sub-milliohm RDS(ON) at low VGS | 1.2Ω @ 2.5V drive supports efficient operation in single-cell Li-ion (2.5–4.2V) systems |
| ESD-protected gate | HBM rating ≥2kV per JEDEC JS-001 - eliminates need for external gate protection in handheld designs |
| Green, halogen-free construction | Br/Cl <900ppm, Sb <1000ppm - meets IPC-1752A Class 3 material declarations for eco-compliant BOMs |
Applications
| Smartphone Power Switching | USB-C Port Power Delivery |
|---|---|
Use Scenario: Enabling/disabling VBUS power to USB peripherals in mobile handsets with tight board area constraints. IC Role / Device Role / Timing Role: Low-side load switch controlling 5V rail delivery with <100ns turn-on delay and minimal voltage drop. Use Value: 0.99Ω RDS(ON) limits voltage drop to <750mV at 750mA, preserving USB spec compliance while reducing thermal footprint by 40% vs. larger DFN alternatives. | Use Scenario: Controlling auxiliary power paths (e.g., VCONN or configuration channel) in USB-C receptacles. IC Role / Device Role / Timing Role: Bidirectional analog switch managing CC line biasing and VCONN sourcing under PD negotiation. Use Value: 1.0V VGS(TH) ensures robust turn-on during low-power PD discovery phase using 1.8V controller I/O, eliminating external gate drivers. |
| Wearable Sensor Node Power Gating | Bluetooth LE Module Battery Management |
Use Scenario: Isolating MEMS sensors or RF front-ends during sleep mode to extend coin-cell battery life. IC Role / Device Role / Timing Role: High-efficiency load switch disconnecting 3.3V subsystems with <1μA leakage (IDSS ≤ 1μA). Use Value: 1.8Ω RDS(ON) @ 1.5V drive allows clean cutoff using same 1.5V LDO that powers BLE SoC, simplifying supply architecture. | Use Scenario: Managing battery discharge path to Bluetooth module during firmware updates or OTA reboots. IC Role / Device Role / Timing Role: Logic-controlled power switch enabling safe hot-swap of firmware update power domains. Use Value: 0.6mm × 0.4mm footprint saves >0.2mm² PCB area vs. competing 0805 discrete switches, critical for miniaturized modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AO3400A | RDS(ON) = 0.028Ω @ 10V, but 2.1Ω @ 1.8V; VGS(TH) = 0.7–1.4V; SOT-23 package (1.7mm × 2.9mm) | Higher RDS(ON) at low VGS increases conduction loss in 1.8V systems; larger footprint consumes 6× more board area | Select when higher drive voltage (>4.5V) is available and board space is not constrained |
| DMN2021UFA-7 | RDS(ON) = 0.55Ω @ 4.5V; VGS(TH) = 0.5–1.0V; same X2-DFN0604-3 package; 20V rating | Lower RDS(ON) improves efficiency at 750mA but higher Qg (0.65nC) slows switching in >500kHz applications | Select when lowest possible conduction loss is prioritized over switching speed in battery-powered devices |
Compared with AO3400A and DMN2021UFA-7, DMN2990UFO-7B uniquely balances ultra-low VGS(TH), sub-1Ω RDS(ON) at 4.5V, and minimal 0.24mm² footprint-making it optimal for 1.8V–4.5V logic-driven load switching where space and low-voltage drive are co-constrained.
Availability
DMN2990UFO-7B is available at Aetrix Electronics and suitable for smartphone power switching, USB-C port power delivery, and wearable sensor node power gating requiring stable component supply across high-mix, low-volume production runs.
Supply support for DMN2990UFO-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN2990UFO-7B belongs to Diodes' X2-DFN logic-level MOSFET product line, engineered specifically for ultra-compact, low-voltage power management in portable and wearables applications where gate drive voltage and PCB area are severely limited.
FAQ
What is the maximum continuous drain current for DMN2990UFO-7B at 85°C ambient?
The maximum continuous drain current is 600mA at TA = +85°C, derated from 750mA at +25°C due to thermal limitations. This value assumes mounting on an FR-4 PCB with 2oz copper and thermal bias to a 1-inch square copper plate, per datasheet Note 5.
Does DMN2990UFO-7B require external gate resistors for ESD protection?
No. The device integrates on-chip ESD protection on the gate terminal rated to ≥2kV HBM, eliminating the need for external series gate resistors in typical portable electronics layouts. External resistors may still be used for ringing suppression in high-speed switching, but not for ESD safety.
Can DMN2990UFO-7B be used in reverse conduction (source-to-drain) mode?
Yes-the intrinsic body diode supports source-to-drain conduction with VSD = 0.6V typical at 150mA and 25°C. However, reverse current must remain within the pulsed drain current limit of 1.5A (10μs, 1% duty cycle) and thermal limits; sustained reverse conduction requires careful thermal design due to lack of dedicated cathode connection.
Is the X2-DFN0604-3 package compatible with standard reflow profiles for lead-free soldering?
Yes. The package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Matte tin annealed terminals ensure reliable wetting, and the UL 94V-0 molding compound withstands repeated thermal cycling without delamination.
DMN2990UFO-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.41 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 31 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 840mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN0604-3
DMN2990UFO-7B FAQ
1.How can I place an order for DMN2990UFO-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2990UFO-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2990UFO-7B reliable?
The price and inventory of DMN2990UFO-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2990UFO-7B is usually 5 days.
3.What payment methods are accepted for DMN2990UFO-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2990UFO-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2990UFO-7B?
DMN2990UFO-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2990UFO-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2990UFO-7B?
For technical support, including DMN2990UFO-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2990UFO-7B requirements.
6.How does Aetrix verify that DMN2990UFO-7B is sourced from the original manufacturer or authorized distributors?
All DMN2990UFO-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2990UFO-7B meets industry standards.
7.What is the process for return or replacement of DMN2990UFO-7B?
All DMN2990UFO-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2990UFO-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2990UFO-7B part is unused and in its original packaging.
Return procedure for DMN2990UFO-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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