Diodes Incorporated DMN2990UFZ-7B

Overview

DMN2990UFZ-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in a 0.62mm × 0.62mm X2-DFN0606-3 package, featuring 0.99Ω R_DS(ON) at V_GS = 4.5V, 1.0V max gate threshold voltage, and AEC-Q101 qualification. It serves as a low-voltage load switch in space-constrained power management circuits, supporting 250mA continuous drain current at +25°C.

For engineers reviewing the DMN2990UFZ-7B datasheet, DMN2990UFZ-7B pinout, DMN2990UFZ-7B application, or DMN2990UFZ-7B equivalent, key selection criteria include ultra-low V_GS(th), sub-1Ω on-resistance at 4.5V drive, 0.42mm profile for thin PCBs, ESD-protected gate, and automotive-grade reliability per AEC-Q101.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) while maintaining fast switching (t_D(on) ≤ 10ns, t_D(off) ≤ 35ns) and low gate charge (Q_g ≤ 1.0nC). Its 1.0V max V_GS(th) enables direct interfacing with 1.2V–1.8V logic outputs without level shifting.

The device integrates an intrinsic body diode with V_SD = 0.6V at 150mA and exhibits normalized R_DS(ON) drift of <1.2× from −55°C to +150°C at fixed V_GS, ensuring stable conduction across industrial temperature ranges.

Key Specifications

Pinout & Package

Package: X2-DFN0606-3 - 0.62mm × 0.62mm footprint, 0.42mm max height, 3-terminal leadless plastic package with NiPdAu-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN2990UFZ-7B, DMN2053UFB-7 offers lower gate threshold for weak-drive scenarios but trades 20% higher R_DS(ON) at 2.5V; AO3400A provides 12× higher current capacity in a larger package but lacks AEC-Q101 qualification and requires higher gate voltage.

Availability

DMN2990UFZ-7B is available at Aetrix Electronics and suitable for USB power switching, low-voltage sensor biasing, automotive interior lighting, and IoT node load management requiring stable component supply and long-term lifecycle support.

Supply support for DMN2990UFZ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

The DMN2990UFZ-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered for space-constrained, low-voltage power switching in battery-powered and automotive electronics.

FAQ

What is the maximum continuous drain current at +85°C ambient?

The DMN2990UFZ-7B supports 170mA continuous drain current at T_A = +85°C with standard FR-4 PCB mounting and minimum recommended pad layout. This derating reflects its 402°C/W junction-to-ambient thermal resistance and 320mW power dissipation limit.

Is the exposed thermal pad electrically connected to any internal node?

Yes, the exposed thermal pad on the DMN2990UFZ-7B's X2-DFN0606-3 package is internally connected to the Source terminal. It must be soldered to a PCB ground plane to ensure both thermal performance and correct circuit operation.

Does this MOSFET require external gate protection in typical applications?

No - the DMN2990UFZ-7B features integrated ESD protection on the Gate terminal rated to ≥2kV per HBM. External gate resistors or TVS diodes are unnecessary unless operating in high-noise industrial environments with >100V transients.

Can it be used in a high-side switch configuration?

Yes, but only with appropriate gate drive. Since it is an N-channel MOSFET, high-side use requires a gate voltage ≥ V_DS + V_GS(th). For 5V rail switching, a charge pump or bootstrap circuit is needed to generate ≥6V gate drive relative to the source.