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Diodes Incorporated DMN2991UDA-7B
- Part No.:
- DMN2991UDA-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-SMD, No Lead
- Datasheet:
-
DMN2991UDA-7B.pdf
- Description:
- MOSFET 2N-CH 20V 0.45A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:55,501
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Product details
Overview
DMN2991UDA-7B from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in an ultra-small X2-DFN0806-6 package (0.8 mm × 0.6 mm), rated for 20 V VDSS, 0.99 Ω RDS(ON) @ 4.5 V VGS, and 0.45 A continuous drain current at +25°C - optimized for space-constrained, low-voltage power management and analog switching in portable electronics.
For engineers reviewing the DMN2991UDA-7B datasheet, DMN2991UDA-7B pinout, DMN2991UDA-7B application, or DMN2991UDA-7B equivalent, key selection criteria include its 1.0 V maximum gate threshold voltage, low input capacitance (21.5 pF), fast switching times (tD(ON) = 5.6 ns), ESD-protected gate, and RoHS-compliant green packaging - all critical for battery-powered load switching and signal routing.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection - each with separate source, drain, and gate terminals. Its low VGS(TH) (max 1.0 V) enables direct drive from 1.8 V and 2.5 V logic, while the 0.47 Ω typical RDS(ON) at 4.5 V supports high-efficiency operation in DC-DC converter synchronous rectification and power rail control.
The device features integrated gate protection diodes per channel (marked D1/S1/G1 and D2/S2/G2), low Ciss/Coss (21.5 pF / 4.9 pF), and guaranteed dynamic parameters including Qg = 0.35 nC - enabling predictable gate drive design and minimizing switching losses in high-frequency (<1 MHz) applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports input rails up to 18 V with 10% margin for transient spikes in USB-powered and Li-ion systems. |
| RDS(ON) @ 4.5 V | 0.99 Ω max - ensures ≤45 mW conduction loss at 0.45 A, critical for thermal performance on FR-4 PCBs with minimal copper area. |
| VGS(TH) max | 1.0 V - guarantees full enhancement with 1.2 V logic outputs, eliminating need for level shifters in low-voltage microcontroller I/O switching. |
| Ciss | 21.5 pF - reduces gate drive power and enables clean edge integrity with standard 10 Ω series resistors at >100 kHz switching. |
| tD(ON) | 5.6 ns - limits overlap time in half-bridge configurations, directly lowering shoot-through risk in compact DC-DC modules. |
| PD | 0.31 W - defines maximum steady-state dissipation on standard FR-4; requires thermal pad layout per datasheet Figure 6 for sustained 0.45 A operation. |
| ESD Rating | HBM ±2 kV - protects against handling damage during SMT assembly and board-level testing without external TVS. |
Pinout & Package
Package: X2-DFN0806-6 - ultra-compact 0.8 mm × 0.6 mm, 0.36 mm height, 6-terminal leadless plastic package with matte tin annealed copper leadframe; moisture sensitivity level 1 (J-STD-020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Controls turn-on of first N-MOSFET; tied internally to gate protection diode D1 (anode to G1, cathode to S1). |
| S1 | Source of Channel 1 | Reference node for Channel 1; electrically isolated from S2 - enables independent source referencing in dual-rail designs. |
| D1 | Drain of Channel 1 | High-side or low-side switching node for Channel 1; rated for 20 V blocking and 0.45 A continuous conduction. |
| D2 | Drain of Channel 2 | Independent high-side/low-side node for Channel 2; identical rating to D1 but no internal connection to D1 or other pins. |
| S2 | Source of Channel 2 | Reference node for Channel 2; isolated from S1 - allows floating source configurations (e.g., high-side switch with bootstrap gate drive). |
| G2 | Gate of Channel 2 | Controls turn-on of second N-MOSFET; tied internally to gate protection diode D2 (anode to G2, cathode to S2). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | Max 1.0 V enables direct interface with 1.2 V, 1.8 V, and 2.5 V logic families without level translation circuitry. |
| Integrated gate protection diodes | Dedicated diode per channel (D1/S1/G1 and D2/S2/G2) suppresses negative VGS transients during hot-swap or inductive load switching. |
| Low input capacitance | 21.5 pF Ciss minimizes gate drive current demand and propagation delay, supporting >500 kHz PWM in compact power stages. |
| Green, halogen-free packaging | UL 94V-0 molded compound with <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets automotive and medical environmental compliance requirements. |
| Thermally optimized DFN layout | Exposed thermal pad (A3 = 0.10 mm) and low RθJA = 404 °C/W allow 0.31 W dissipation with minimal PCB copper area. |
Applications
| USB Power Delivery Switching | Wearable Sensor Power Gating |
|---|---|
|
Use Scenario: Selective enable/disable of VBUS paths in USB-C PD sink applications with 3.3 V or 1.8 V microcontroller control. IC Role / Device Role / Timing Role: Dual-channel load switch managing independent 5 V and 3.3 V rails; each channel controlled by separate GPIO. Use Value: 1.0 V VGS(TH) ensures reliable turn-on from 1.8 V MCU outputs; 0.99 Ω RDS(ON) limits voltage drop to <0.45 V at 0.45 A, preserving PD negotiation margins. |
Use Scenario: Power cycling of MEMS accelerometers and optical heart-rate sensors in fitness trackers to extend battery life. IC Role / Device Role / Timing Role: Low-leakage power gate isolating sensor supply domains; S1/S2 used as independent return paths for isolated analog sections. Use Value: 1 μA max IDSS prevents standby current leakage; 0.8 mm × 0.6 mm footprint saves >60% board area versus SO-8 dual MOSFETs. |
| IoT Node Battery Protection | Smartphone Camera Module Control |
|
Use Scenario: Overvoltage and reverse-polarity protection for single-cell Li-ion inputs in Bluetooth LE modules. IC Role / Device Role / Timing Role: Back-to-back N-MOSFET configuration using both channels to block reverse current and clamp overvoltage via gate clamping. Use Value: Integrated gate protection diodes eliminate need for external Zener clamps; ±8 V VGSS rating supports robust gate control under fault conditions. |
Use Scenario: High-speed enable control of flash LED drivers and autofocus actuators in multi-camera smartphone subsystems. IC Role / Device Role / Timing Role: Fast-switching analog switch routing bias and enable signals between baseband processor and camera ICs. Use Value: 5.6 ns tD(ON) and 4.9 ns tR ensure sub-10 ns signal path latency; low Ciss prevents signal distortion in 10–50 MHz control lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2021UCB-7 | Single-channel, same X2-DFN0806-6 package; 20 V, 0.85 Ω @ 4.5 V, 0.5 A ID - lacks second channel and gate protection diodes. | Requires two devices for dual-switch function; higher BOM count and layout area vs. DMN2991UDA-7B's integrated dual topology. | Select when only one switch is needed or when gate protection is implemented externally. |
| AO6401 | SO-8 packaged dual N-MOSFET; 30 V, 0.045 Ω @ 10 V, 6 A ID - larger footprint (5 mm × 6 mm), higher drive voltage requirement (VGS(TH) up to 3 V). | Not suitable for space-constrained 1.8 V logic interfaces; better for higher-current, less size-sensitive industrial controls. | Select for >1 A loads or where SO-8 thermal mass improves reliability under pulsed stress. |
Compared with DMN2021UCB-7, DMN2991UDA-7B delivers dual-channel integration and gate protection in the same footprint; versus AO6401, it trades current capacity for 95% smaller area and 1.0 V logic compatibility - making it optimal for miniaturized, low-voltage portable systems.
Availability
DMN2991UDA-7B is available at Aetrix Electronics and suitable for USB power delivery switching, wearable sensor power gating, and IoT node battery protection requiring stable component supply across high-mix, low-volume production runs.
Supply support for DMN2991UDA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for consumer, computing, industrial, and automotive markets.
The DMN2991UDA-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained, low-voltage portable electronics where gate drive simplicity, thermal efficiency, and environmental compliance are critical.
FAQ
What is the maximum continuous drain current for each channel at +70°C?
Each channel supports 0.36 A continuous drain current at +70°C ambient temperature, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations on standard FR-4 PCBs with minimum recommended pad layout; actual current capability increases with enhanced copper pour or thermal vias.
Does DMN2991UDA-7B support back-to-back MOSFET configuration for reverse current blocking?
Yes - the dual independent channels (G1/S1/D1 and G2/S2/D2) enable true back-to-back N-MOSFET implementation without shared source/drain nodes. This configuration provides bidirectional blocking and overvoltage clamping when gates are driven together, leveraging the integrated gate protection diodes for transient suppression.
Is the X2-DFN0806-6 package compatible with standard reflow profiles for lead-free soldering?
Yes - the package uses matte tin annealed copper leadframe and complies with J-STD-020 Level 1 moisture sensitivity. It is qualified for standard IPC/JEDEC J-STD-020 lead-free reflow profiles (peak 260°C, 60 seconds max), with no pre-bake required due to its MSL-1 rating.
How does the gate protection diode affect layout in high-speed switching applications?
The integrated gate-source diode (D1/D2) clamps negative VGS transients to ~0.6 V, eliminating need for external Schottky clamps. Layout must maintain short, low-inductance gate traces to avoid ringing; the diode does not impact turn-on speed but prevents gate oxide damage during inductive switching events.
DMN2991UDA-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 450mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 21.5pF @ 16V
- Power - Max:
- 310mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN0806-6
DMN2991UDA-7B FAQ
1.How can I place an order for DMN2991UDA-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2991UDA-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2991UDA-7B reliable?
The price and inventory of DMN2991UDA-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2991UDA-7B is usually 5 days.
3.What payment methods are accepted for DMN2991UDA-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2991UDA-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2991UDA-7B?
DMN2991UDA-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2991UDA-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2991UDA-7B?
For technical support, including DMN2991UDA-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2991UDA-7B requirements.
6.How does Aetrix verify that DMN2991UDA-7B is sourced from the original manufacturer or authorized distributors?
All DMN2991UDA-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2991UDA-7B meets industry standards.
7.What is the process for return or replacement of DMN2991UDA-7B?
All DMN2991UDA-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2991UDA-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2991UDA-7B part is unused and in its original packaging.
Return procedure for DMN2991UDA-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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