Diodes Incorporated DMN2991UDR4-7
- Part No.:
- DMN2991UDR4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
DMN2991UDR4-7.pdf
- Description:
- MOSFET 2N-CH 20V 0.5A 6DFN
- Quantity:
- Payment:

- Shipping:

Inventory:2,555
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Product details
Overview
DMN2991UDR4 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 1.0 mm × 1.0 mm X2-DFN1010-6 package, rated for 20 V VDSS, 0.5 A continuous drain current at 25°C, and 0.99 Ω RDS(ON) at VGS = 4.5 V. It serves as a compact, low-voltage load switch in space-constrained power-management circuits such as LED backlighting and portable USB peripherals.
For engineers reviewing the DMN2991UDR4 datasheet, DMN2991UDR4 pinout, DMN2991UDR4 application, or DMN2991UDR4 equivalent, this device is selected for ultra-small-footprint DC-DC output switching, battery-powered load isolation, and low-threshold logic-level gate drive compatibility with 1.8 V/2.5 V microcontrollers.
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single die with shared source terminals (common-source configuration per channel), enabling synchronous or independent switching control. Its gate threshold voltage range (0.4–1.0 V) supports direct interfacing with low-voltage I/Os, while its 3.2 pF Crss and 14.6 pF Ciss ensure fast turn-on/turn-off transitions under light gate-drive conditions.
The device operates across –55°C to +150°C junction temperature and features ESD-protected gates (HBM >2 kV), low input/output leakage (<1 µA IDSS, <10 µA IGSS), and thermally optimized thermal resistance (RθJA = 331°C/W on FR-4, 180°C/W with copper pad).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 3.3 V and 5 V rail applications. |
| RDS(ON) @ VGS = 4.5 V | 0.99 Ω - Enables ≤500 mW conduction loss at 0.5 A, suitable for low-power load switching. |
| ID (continuous, 25°C) | 0.5 A - Supports typical current demands of display bias circuits and sensor power gating. |
| VGS(TH) | 0.4–1.0 V - Ensures reliable turn-on with 1.8 V GPIOs without level-shifting circuitry. |
| Ciss | 14.6 pF - Minimizes gate drive energy and enables <20 ns rise time with 10 Ω source impedance. |
| Qg | 0.28 nC - Reduces switching losses in high-frequency (>1 MHz) PWM-controlled loads. |
| RθJA (FR-4) | 331 °C/W - Defines thermal derating curve: max 0.38 W power dissipation at ambient 25°C. |
Pinout & Package
Package: X2-DFN1010-6 (Type UXC), 1.0 mm × 1.0 mm × 0.4 mm body, 0.35 mm pitch, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (Channel 1) | Common-source connection for first MOSFET; electrically tied to exposed thermal pad. |
| 4 | Gate (Channel 1) | Controls conduction of Channel 1; ESD-protected, compatible with 1.8 V logic. |
| 5, 6 | Source (Channel 2) | Common-source connection for second MOSFET; isolated from Channel 1 source in layout. |
| - | Drain (Channels 1 & 2) | Exposed thermal pad (pinless); serves as both drain terminals and primary heat path. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.0 mm × 1.0 mm DFN package saves >70% board area vs. SOT-23 dual MOSFETs. |
| Low-voltage gate drive | VGS(TH) down to 0.4 V enables direct interface with 1.8 V microcontroller I/O pins. |
| Low leakage performance | IDSS ≤1 µA at 16 V ensures minimal standby current in battery-critical load-switch designs. |
| ESD-protected gate | HBM >2 kV rating eliminates need for external gate protection in handheld PCB layouts. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound meets automotive and medical regulatory requirements. |
Applications
| Smartphone Backlight Control | USB-C Port Power Switching |
|---|---|
|
Use Scenario: Driving white LED strings in OLED/LCD displays using PWM dimming at 1–10 kHz. IC Role / Device Role / Timing Role: Dual-channel load switch isolating backlight rails from main PMIC; each channel independently gated. Use Value: 0.99 Ω RDS(ON) limits voltage drop to <500 mV at 500 mA, preserving display brightness uniformity. |
Use Scenario: Enabling/disabling VBUS power delivery to downstream USB-C peripherals during hot-plug detection. IC Role / Device Role / Timing Role: Dual N-MOSFET used in back-to-back configuration for bidirectional overvoltage protection and reverse-current blocking. Use Value: Low 1.8 Ω RDS(ON) at 1.8 V VGS ensures <900 mV drop at 500 mA, meeting USB PD 3.0 voltage-drop compliance. |
| Wearable Sensor Power Gating | IoT Edge Node Battery Management |
|
Use Scenario: Cycling power to MEMS accelerometers and environmental sensors in BLE-enabled wearables during sleep mode. IC Role / Device Role / Timing Role: Independent channel control allows staggered wake-up sequencing and leakage minimization. Use Value: 0.32 A capability at 1.5 V VGS supports low-power sensor startup without external level shifters. |
Use Scenario: Isolating backup supercapacitor banks from main Li-ion cells during charging cycles in industrial IoT nodes. IC Role / Device Role / Timing Role: Dual switch implements active OR-ing and charge-path selection with thermal monitoring. Use Value: RθJA = 180°C/W with copper pad enables sustained 0.45 A operation at 85°C ambient without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LSD-13 | Higher RDS(ON) (1.4 Ω @ 4.5 V), larger SOT-26 package (2.9 × 2.8 mm), higher ID (1.2 A). | Better suited for higher-current, less space-constrained applications; not pin-compatible. | Select when >1 A load current or legacy SMT placement equipment requires SOIC/SOT footprints. |
| AOB20362 | Single-channel, same X2-DFN1010-6 footprint but only one MOSFET; RDS(ON) = 0.85 Ω @ 4.5 V. | Requires two devices for dual-channel function; lower per-channel cost but higher assembly count. | Select when channel independence is unnecessary or board layout allows duplication. |
Compared with DMN2041LSD-13 and AOB20362, the DMN2991UDR4 uniquely balances ultra-compact size, sub-1 V gate threshold, and dual-channel integration-making it optimal for miniaturized battery-powered systems where board area and low-voltage drive are critical constraints.
Availability
DMN2991UDR4 is available at Aetrix Electronics and suitable for smartphone backlight control, USB-C port power switching, and wearable sensor power gating requiring stable component supply across production lifecycles.
Supply support for DMN2991UDR4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and precision timing solutions.
The DMN2991UDR4 belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space- and power-constrained portable electronics requiring logic-level gate drive and robust thermal performance in sub-1 mm² packages.
FAQ
What is the maximum safe operating junction temperature for DMN2991UDR4?
The DMN2991UDR4 has a specified junction temperature range of –55°C to +150°C. Its absolute maximum rating is TJ = +150°C; operation beyond this limit risks permanent parametric shift or bond-wire failure. Thermal design must maintain TJ ≤150°C under worst-case ambient and power dissipation conditions, verified using RθJA = 331°C/W (FR-4) or 180°C/W (copper-enhanced layout).
Can DMN2991UDR4 be used in a back-to-back configuration for reverse-current blocking?
Yes-its dual N-channel structure supports back-to-back connection with sources tied together and drains serving as input/output terminals. This configuration blocks reverse current flow when either gate is held low, provided gate drive maintains VGS < VGS(TH) during off-state. The 0.4 V minimum VGS(TH) necessitates careful gate biasing to avoid partial turn-on during transients.
Is the exposed thermal pad electrically connected to any internal node?
Yes-the exposed pad (designated as Drain for both channels in the equivalent circuit) is internally connected to the drain terminals of both MOSFETs and serves as the primary thermal and electrical path for drain current. It must be soldered to a PCB copper pour tied to the system ground or drain net; floating the pad violates thermal and electrical specifications and may cause premature failure.
Does DMN2991UDR4 meet AEC-Q101 qualification for automotive use?
No-the DMN2991UDR4 is not AEC-Q101 qualified. Diodes Incorporated explicitly states in the datasheet that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing; this part is intended for commercial and industrial applications. For automotive use, consult Diodes' AEC-Q101-qualified equivalents such as the DMP2035U-7.
DMN2991UDR4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14.6pF @ 16V
- Power - Max:
- 380mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1010-6 (Type UXC)
DMN2991UDR4-7 FAQ
1.How can I place an order for DMN2991UDR4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2991UDR4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2991UDR4-7 reliable?
The price and inventory of DMN2991UDR4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2991UDR4-7 is usually 5 days.
3.What payment methods are accepted for DMN2991UDR4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2991UDR4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2991UDR4-7?
DMN2991UDR4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2991UDR4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2991UDR4-7?
For technical support, including DMN2991UDR4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2991UDR4-7 requirements.
6.How does Aetrix verify that DMN2991UDR4-7 is sourced from the original manufacturer or authorized distributors?
All DMN2991UDR4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2991UDR4-7 meets industry standards.
7.What is the process for return or replacement of DMN2991UDR4-7?
All DMN2991UDR4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2991UDR4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2991UDR4-7 part is unused and in its original packaging.
Return procedure for DMN2991UDR4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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