Diodes Incorporated DMN2991UDR4-7R

Overview

DMN2991UDR4 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 1.0 mm × 1.0 mm X2-DFN1010-6 package, rated for 20 V V_DSS, 0.5 A continuous drain current at 25°C, and R_DS(ON) of 0.99 Ω at V_GS = 4.5 V. It serves as a compact, low-voltage load switch in space-constrained power management circuits such as portable backlight drivers and USB-powered peripherals.

For engineers reviewing the DMN2991UDR4 datasheet, DMN2991UDR4 pinout, DMN2991UDR4 application, or DMN2991UDR4 equivalent, key selection criteria include its 1.5 V gate threshold compatibility with 1.8 V logic, low 0.38 W power dissipation on FR-4 PCBs, ESD-protected gate, and dual-channel configuration enabling independent control of two low-side loads.

Technical Context

This device integrates two identical N-channel MOSFETs sharing a common source terminal per channel (dual independent switches), optimized for low-voltage DC-DC load switching where gate drive voltage is limited to ≤4.5 V. Its R_DS(ON) remains below 1.2 Ω down to V_GS = 2.5 V and stays stable across −55°C to +150°C junction temperature range.

The MOSFET features fully characterized dynamic parameters: C_iss = 14.6 pF, Q_g = 0.28 nC, and fast switching times (t_D(ON) = 7.1 ns, t_F = 56.9 ns) under 10 V V_DD, supporting high-frequency PWM dimming in LED backlighting without excessive gate drive loss.

Key Specifications

Pinout & Package

Package: X2-DFN1010-6 (Type UXC), 1.0 mm × 1.0 mm, 0.4 mm height, thermally enhanced exposed pad (pin 6), RoHS-compliant NiPdAu-plated terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Compared with DMN2004LSD-7 and AOB20362L, the DMN2991UDR4 delivers superior space efficiency (1.0 mm² vs. ≥4.8 mm²), lower thermal resistance via exposed pad, and guaranteed ESD robustness-critical for handheld and wearable designs where layout density and field reliability are prioritized over marginal R_DS(ON) improvement.

Availability

DMN2991UDR4 is available at Aetrix Electronics and suitable for smartphone backlight control, USB-C power delivery load switching, wearable sensor power gating, and IoT edge node battery management requiring stable component supply across production lifecycles.

Supply support for DMN2991UDR4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified ISO/TS 16949 and IATF 16949 facilities.

This device belongs to Diodes' X2-DFN ultra-compact MOSFET product line, engineered specifically for space-constrained, low-voltage portable electronics where gate drive compatibility, thermal efficiency, and green compliance are non-negotiable.

FAQ

What is the maximum safe operating junction temperature for DMN2991UDR4?

The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. At this temperature, R_DS(ON) increases by ≤1.8× its 25°C value, and gate threshold remains within 0.4–1.0 V. Operation above this limit risks permanent parametric shift and accelerated wear-out.

Can DMN2991UDR4 be driven directly from a 1.8 V GPIO without a level shifter?

Yes. With V_GS(TH) specified up to 1.0 V and R_DS(ON) guaranteed at V_GS = 1.8 V (1.8 Ω), the device achieves full enhancement at 1.8 V logic levels. Measured R_DS(ON) at 1.8 V is 0.7 Ω typical, delivering 370 mA with <300 mW loss-sufficient for most low-power load-switching tasks.

Is the exposed pad (Pin 6) electrically connected to Source 2 or ground?

Pin 6 is the Source 2 terminal and the thermal pad-both are internally bonded to the same copper leadframe. It must be soldered to a PCB ground plane or dedicated thermal pad to achieve the specified R_θJA = 331°C/W. Leaving it unconnected degrades thermal performance by >40% and violates JEDEC mounting requirements.

Does DMN2991UDR4 support reverse current blocking in load-switch configurations?

No. As an N-channel MOSFET with body diode oriented anode-to-source, it conducts current from drain to source when V_DS < 0 (i.e., reverse polarity). For bidirectional blocking, external circuitry (e.g., back-to-back configuration or dedicated ideal diode controller) is required-this device is designed strictly for unidirectional low-side switching.