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Diodes Incorporated DMN2991UFB4-7B

Part No.:
DMN2991UFB4-7B
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-XFDFN
Datasheet:
AetrixDMN2991UFB4-7B.pdf
Description:
MOSFET BVDSS: 8V~24V X2-DFN1006-
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,750

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Product details

Overview

DMN2991UFB4-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in X2-DFN1006-3 package, optimized for ultra-compact load switching. It delivers RDS(ON) = 0.99Ω @ VGS = 4.5V, 0.5A continuous drain current at +25°C, and features low gate threshold (0.4–1.0V), fast switching (tD(ON) = 7.1ns), and integrated ESD-protected gate-used in space-constrained power rails of wearables and IoT sensors.

For engineers reviewing the DMN2991UFB4-7B datasheet, DMN2991UFB4-7B pinout, DMN2991UFB4-7B application, or DMN2991UFB4-7B equivalent, key selection criteria include its 0.6mm² footprint, 0.4mm profile, 1.8V logic-level drive capability, thermal resistance (RθJA = 343°C/W on FR-4), and AEC-Q101 readiness for automotive-grade reliability validation.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining robust body diode performance (VSD = 0.7–1.0V @ IS = 150mA) and controlled gate charge (Qg = 0.28nC). Its sub-1V VGS(TH) enables direct interfacing with 1.8V/2.5V microcontrollers without level-shifting.

The device operates across –55°C to +150°C junction temperature range, with normalized RDS(ON) variation ≤1.4× over full temperature range at VGS = 4.5V. Dynamic parameters-including Ciss = 14.6pF, Coss = 4.7pF, and Crss = 3.2pF-are characterized at VDS = 16V, supporting high-frequency PWM control up to several MHz.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - Maximum drain-source blocking voltage for 3.3V/5V system rail protection
RDS(ON) 0.99Ω @ VGS = 4.5V - Enables <100mW conduction loss at 0.32A, critical for battery runtime
ID (continuous) 0.5A @ TA = +25°C - Sustains typical load-switch current in portable USB peripherals
VGS(TH) 0.4–1.0V - Guarantees turn-on with 1.8V GPIOs; eliminates need for external gate drivers
Qg 0.28nC - Reduces gate-drive power and switching transition time in high-duty-cycle apps
RθJA 343°C/W - Requires minimal copper area on FR-4 PCB; no thermal pad needed for <300mW dissipation
Ciss 14.6pF - Limits Miller effect in 1–5MHz DC-DC synchronous rectifier or LED dimming circuits

Pinout & Package

Package: X2-DFN1006-3 (1.0 × 0.6 × 0.4 mm, 0.001g), molded green plastic, NiPdAu-plated terminals, JEDEC-compliant Level 1 moisture sensitivity.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Common reference node for gate control; tied to ground or low-side return path
Pin 2 (Gate) Control input (G) Accepts 1.8V–4.5V logic signals; ESD-protected (HBM >2kV per JESD22-A114)
Pin 3 (Drain) Power output (D) Switches 20V rail to load; exposed thermal pad (bottom center) connects to PCB ground plane

Key Features

Feature Design Value
Ultra-small footprint 0.6mm² area - fits within 1.0mm × 0.6mm PCB real estate, enabling 3× higher density than SOT-23
Low-profile height 0.4mm max - compatible with stacked PCB assemblies and thin-film encapsulation in medical patches
Logic-level gate drive VGS(TH) ≤1.0V - ensures reliable turn-on using standard 1.8V/2.5V MCU I/O without pull-up resistors
Fast switching speed tD(ON) = 7.1ns, tF = 56.9ns - supports >1MHz PWM in compact buck converters and LED drivers
Green compliance Halogen-free, antimony-free, RoHS 3 compliant - meets IPC-1752A material declaration requirements

Applications

Wearable Power Management USB-C Port Protection

Use Scenario: Power sequencing and fault isolation in smartwatch mainboard, where space limits discrete FET selection.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3V sensor rail; activated by ARM Cortex-M0+ GPIO.

Use Value: 0.99Ω RDS(ON) limits voltage drop to <330mV at 330mA, preserving ADC reference stability and battery life.

Use Scenario: Overcurrent and reverse-polarity protection on USB-C receptacle VBUS line in portable docking stations.

IC Role / Device Role / Timing Role: High-side switch placed between upstream PD controller and downstream port; driven by dedicated load-switch IC.

Use Value: 20V BVDSS withstands 20V PD negotiation transients; fast tF = 56.9ns minimizes fault propagation delay during short-circuit events.

IoT Sensor Node Rail Switching Automotive Cabin Controller Load Switch

Use Scenario: Enabling/disabling BLE radio and environmental sensor subsystems in battery-powered asset trackers.

IC Role / Device Role / Timing Role: N-channel MOSFET used in low-side configuration to disconnect 1.8V digital supply when MCU enters deep sleep.

Use Value: Sub-1V VGS(TH) allows direct control from 1.8V MCU GPIO; leakage IDSS <1µA extends shelf-life beyond 10 years.

Use Scenario: Controlled power delivery to infotainment USB ports and ambient light sensor modules in vehicle cabin ECUs.

IC Role / Device Role / Timing Role: AEC-Q101-qualified load switch managed by CAN-connected microcontroller; monitors VGS via internal sense resistor.

Use Value: RθJA = 109°C/W (on optimized board) sustains 0.4A continuous current at +85°C ambient, meeting ISO 16750-2 thermal requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK3-7 RDS(ON) = 0.45Ω @ VGS = 4.5V; larger X1-DFN0603-3 (0.6 × 0.3 × 0.3mm); no ESD protection Higher current (0.8A) but requires external TVS for gate protection in noisy environments Choose when lower conduction loss outweighs ESD risk and board space permits 0.18mm² increase
AO3400A RDS(ON) = 0.028Ω @ VGS = 10V; SOT-23 package (2.9 × 1.3 × 1.0mm); VGS(TH) = 0.7–1.4V Higher drive voltage requirement; unsuitable for 1.8V logic; 13× larger footprint Prefer only if system uses 3.3V/5V GPIOs and thermal budget allows larger package

Compared with DMN2991UFB4-7B, DMN2004LK3-7 offers lower RDS(ON) but lacks integrated ESD protection, while AO3400A demands higher gate voltage and occupies significantly more PCB area-making DMN2991UFB4-7B optimal for 1.8V-driven, space-constrained, high-reliability load switching.

Availability

DMN2991UFB4-7B is available at Aetrix Electronics and suitable for wearable electronics, USB-C accessory protection, and automotive cabin controllers requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for DMN2991UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and Diodes' own facilities.

This MOSFET belongs to Diodes' X2-DFN logic-level portfolio, engineered specifically for ultra-miniature, low-voltage load switching in battery-powered and automotive-qualified systems where footprint, thermal efficiency, and gate-drive compatibility are critical.

FAQ

What is the maximum continuous drain current at +70°C ambient?

The DMN2991UFB4-7B supports 0.4A continuous drain current at TA = +70°C under standard FR-4 PCB mounting conditions (minimum recommended pad layout). This derating reflects thermal limitations due to RθJA = 343°C/W and power dissipation limit of 0.36W at steady state.

Does this MOSFET require an external gate resistor for stability?

No external gate resistor is required for basic switching operation. The device's low Qg (0.28nC) and Crss (3.2pF) minimize ringing; however, a 10Ω series resistor is recommended in high-noise automotive environments to dampen potential gate oscillation during fast edge transitions.

Is the X2-DFN1006-3 package lead-free and RoHS compliant?

Yes. The DMN2991UFB4-7B uses NiPdAu-plated copper leadframe and halogen-free green molding compound, fully complying with EU RoHS Directive 2015/863/EU (RoHS 3), with bromine and chlorine each <900ppm and antimony <1000ppm.

Can this MOSFET be used in high-side switching configurations?

No-it is an N-channel device and not suited for high-side switching without a gate-boost circuit. For high-side applications, a P-channel alternative like DMN2053LFG-7 or gate-driver-assisted N-channel solution is required to maintain VGS > VGS(TH) across the full load voltage range.

DMN2991UFB4-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-XFDFN
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.28 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
14.6 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
360mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN1006-3

DMN2991UFB4-7B FAQ

1.How can I place an order for DMN2991UFB4-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2991UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2991UFB4-7B reliable?

The price and inventory of DMN2991UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2991UFB4-7B is usually 5 days.

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4.How is shipping managed for DMN2991UFB4-7B?

DMN2991UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2991UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2991UFB4-7B?

For technical support, including DMN2991UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2991UFB4-7B requirements.

6.How does Aetrix verify that DMN2991UFB4-7B is sourced from the original manufacturer or authorized distributors?

All DMN2991UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2991UFB4-7B meets industry standards.

7.What is the process for return or replacement of DMN2991UFB4-7B?

All DMN2991UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2991UFB4-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2991UFB4-7B part is unused and in its original packaging.

Return procedure for DMN2991UFB4-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2991UFB4-7B Tags

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