Diodes Incorporated DMN2991UFB4Q-7B
- Part No.:
- DMN2991UFB4Q-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2991UFB4Q-7B.pdf
- Description:
- MOSFET BVDSS: 8V~24V X2-DFN1006-
- Quantity:
- Payment:

- Shipping:

Inventory:5,714
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Product details
Overview
DMN2991UFB4Q-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in X2-DFN1006-3 package, optimized for ultra-compact load switching in space-constrained automotive and portable electronics. It delivers RDS(ON) = 0.99Ω @ VGS = 4.5V, ID = 0.5A, and features AEC-Q101 qualification, 0.4mm profile, and 0.6mm² footprint.
For engineers reviewing the DMN2991UFB4Q-7B datasheet, DMN2991UFB4Q-7B pinout, DMN2991UFB4Q-7B application, or DMN2991UFB4Q-7B equivalent, key selection criteria include low-threshold gate drive (VGS(TH) = 0.4–1.0V), fast switching (tF = 56.9ns), thermal resistance (RθJA = 343°C/W on FR-4), and automotive-grade reliability under IATF16949 manufacturing.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) at sub-2V gate drive while maintaining robust body diode performance (VSD = 0.7–1.0V @ IS = 150mA) and ESD-protected gate (±8V VGSS). Its 109°C/W RθJA under pulsed conditions supports transient current handling up to 1.59A.
The device integrates an internal gate protection diode and uses NiPdAu-plated copper leadframe for solderability per MIL-STD-202. Its normalized RDS(ON) variation over −55°C to +150°C (Figure 6) enables stable operation across automotive temperature extremes without external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage for 12V automotive rail and USB PD auxiliary power switches |
| RDS(ON) | 0.99Ω @ VGS = 4.5V - Enables <100mW conduction loss at 0.5A, critical for battery-powered load control |
| VGS(TH) | 0.4–1.0V - Supports direct interface with 1.8V/2.5V logic outputs without level-shifting circuitry |
| Qg | 0.28nC - Minimizes gate drive power and enables >1MHz switching in high-frequency DC-DC pre-regulators |
| ID (max) | 0.5A @ TA = +25°C - Sustains continuous current in always-on sensor bias rails and LED indicator drivers |
| RθJA | 343°C/W - Defines thermal derating on standard FR-4 PCBs; requires minimal copper area for ambient-limited designs |
| Ciss | 14.6pF - Limits Miller effect in high-side switch configurations, reducing shoot-through risk in half-bridge gate drivers |
Pinout & Package
Package: X2-DFN1006-3 - 1.0mm × 0.6mm, 0.4mm height, 3-terminal bottom-exposed thermal pad (no leads), RoHS-compliant green molding compound (UL 94V-0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for load current; tied to PCB ground plane | Low-inductance connection essential for minimizing VSD overshoot during fast turn-off |
| 2 (Gate) | Control input for channel conduction; ESD-protected | Accepts 1.8V logic; gate charge Qg = 0.28nC enables low-power microcontroller drive |
| 3 (Drain) | High-side or low-side power path terminal | Exposed top metal connects to load; thermal pad beneath package enhances junction-to-board heat transfer |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.6mm² area - saves >92% board space vs. SOT-23, enabling integration into wearables and TWS earbud PCBs |
| Low-profile construction | 0.4mm max height - fits under stacked connectors and thin display bezels in automotive infotainment modules |
| AEC-Q101 qualification | Validated for automotive load switching - includes HTOL, TC, UHAST, and ESD testing per JESD47 |
| Thermal-enhanced DFN | Bottom-exposed thermal pad - reduces RθJA by 68% vs. non-thermal DFN equivalents at same size |
| Halogen-free & green | <900ppm Br/Cl, <1000ppm Sb - meets EU ELV and China RoHS requirements for end-of-life vehicle compliance |
Applications
| Automotive Cabin Sensors | USB-C Port Power Switching |
|---|---|
|
Use Scenario: Power gating of MEMS accelerometers and humidity sensors in door modules and center consoles. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3V sensor supply rail; activated only during wake-up cycles. Use Value: 0.4VGS(TH) ensures reliable turn-on from MCU GPIO; 0.99Ω RDS(ON) limits idle current to <200µA per sensor. |
Use Scenario: VBUS enable/disable in USB-C receptacles supporting alternate mode negotiation. IC Role / Device Role / Timing Role: High-side switch isolating 5V/9V/15V/20V power paths during cable insertion/removal events. Use Value: Fast tF = 56.9ns prevents voltage glitches during hot-plug; AEC-Q101 rating ensures reliability in automotive USB hubs. |
| Wireless Earbud Battery Management | Industrial IoT Node Bias Rails |
|
Use Scenario: Enabling/disabling charging ICs and Bluetooth SoCs during sleep states in true wireless stereo earbuds. IC Role / Device Role / Timing Role: Low-side switch disconnecting 3.7V Li-ion battery from subsystems during deep-sleep (<1µA quiescent). Use Value: 0.6mm² footprint allows placement adjacent to battery connector; 0.4mm height avoids interference with battery flex cables. |
Use Scenario: Power sequencing of LoRaWAN transceivers and environmental sensors in battery-operated edge nodes. IC Role / Device Role / Timing Role: Controlled turn-on of 3.3V analog front-end after microcontroller boot completes. Use Value: RDS(ON) stability over −40°C to +85°C (Figure 5) eliminates calibration drift in outdoor deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2021UFB4-7 | RDS(ON) = 1.2Ω @ VGS = 4.5V; VDSS = 20V; same X2-DFN1006-3 package | Higher on-resistance increases conduction loss by ~21% at 0.5A; suitable where thermal margin exists | Select when cost sensitivity outweighs efficiency needs and existing layout accommodates identical footprint |
| AO3400A | RDS(ON) = 0.042Ω @ VGS = 10V; VDSS = 30V; SOT-23-3 package (2.9mm × 1.3mm) | Lower RDS(ON) but requires 10V gate drive; 13× larger footprint limits use in ultra-dense layouts | Prefer for higher-current (>1A) industrial loads where board space permits and 3.3V logic cannot directly drive gate |
Compared with DMN2021UFB4-7, the DMN2991UFB4Q-7B offers 17% lower RDS(ON) for better efficiency in battery-critical systems; versus AO3400A, it trades off absolute on-resistance for 92% smaller area and 1.8V logic compatibility-making it optimal for miniaturized automotive and portable designs.
Availability
DMN2991UFB4Q-7B is available at Aetrix Electronics and suitable for automotive cabin sensors, USB-C port power switching, wireless earbud battery management, and industrial IoT node bias rails requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN2991UFB4Q-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' Automotive-Grade Power Switch family, engineered specifically for AEC-Q101-compliant load switching in infotainment, ADAS, and body electronics-emphasizing small size, low-voltage drive, and thermal resilience.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN2991UFB4Q-7B supports 0.4A continuous drain current at TA = +70°C (per datasheet Note 5), derated from 0.5A at +25°C due to thermal limitations on standard FR-4 PCBs. This reflects its 343°C/W RθJA and 0.36W PD limit under steady-state conditions.
Does this MOSFET require an external gate resistor for ESD protection?
No. The DMN2991UFB4Q-7B integrates an internal gate protection diode and is rated for ±8V gate-source voltage, eliminating need for external series resistors in typical 1.8V–4.5V logic-driven applications. External gate resistors may still be used to control switching speed or damp ringing in high-dI/dt layouts.
Can it be used in high-side switching configurations?
Yes. As an N-channel MOSFET, it can serve in high-side roles when paired with a gate driver that provides VGS ≥ 4.5V above the drain potential. Its 20V VDSS and 0.99Ω RDS(ON) make it viable for 12V automotive high-side loads up to 0.5A, provided gate drive voltage exceeds source voltage by threshold margin.
Is the thermal pad electrically isolated?
No. In the X2-DFN1006-3 package, the exposed thermal pad is internally connected to the Source terminal (Pin 1). PCB layout must tie the pad to the same net as the source trace or ground plane to ensure proper thermal conduction and electrical continuity-failure to do so causes thermal runaway and parametric shift.
DMN2991UFB4Q-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.28 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14.6 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2991UFB4Q-7B FAQ
1.How can I place an order for DMN2991UFB4Q-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2991UFB4Q-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2991UFB4Q-7B reliable?
The price and inventory of DMN2991UFB4Q-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2991UFB4Q-7B is usually 5 days.
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Once your DMN2991UFB4Q-7B order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for DMN2991UFB4Q-7B?
For technical support, including DMN2991UFB4Q-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2991UFB4Q-7B requirements.
6.How does Aetrix verify that DMN2991UFB4Q-7B is sourced from the original manufacturer or authorized distributors?
All DMN2991UFB4Q-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2991UFB4Q-7B meets industry standards.
7.What is the process for return or replacement of DMN2991UFB4Q-7B?
All DMN2991UFB4Q-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2991UFB4Q-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2991UFB4Q-7B part is unused and in its original packaging.
Return procedure for DMN2991UFB4Q-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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