Diodes Incorporated DMN2991UT-7
- Part No.:
- DMN2991UT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-523
- Datasheet:
-
DMN2991UT-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT523 T&R
- Quantity:
- Payment:

- Shipping:

Inventory:2,024
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Product details
Overview
DMN2991UT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V VDSS, 0.3A continuous drain current at 25°C, and ultra-low gate threshold voltage (≤1.0V), enabling direct drive from 1.8V logic. It delivers RDS(ON) = 3Ω @ VGS = 4.5V and 6Ω @ VGS = 1.8V, targeting space-constrained load switching in portable power management.
For engineers reviewing the DMN2991UT-7 datasheet, DMN2991UT-7 pinout, DMN2991UT-7 application, or DMN2991UT-7 equivalent, key selection criteria include low-voltage gate compatibility, sub-1V turn-on behavior, thermal performance on FR-4 with minimal copper, and SOT523 footprint constraints in high-density DC-DC converter layouts.
Technical Context
This MOSFET employs a planar trench-enhanced silicon process optimized for low VGS(TH) and minimized input capacitance (Ciss = 21.5pF), supporting fast switching (tD(ON) = 5.6ns) without compromising leakage (IDSS ≤ 1μA @ 16V). Its body diode exhibits VSD = 0.8–1.0V @ 150mA, suitable for synchronous rectification in low-duty-cycle topologies.
The device operates across –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.6× over that range at VGS = 4.5V. Thermal resistance is 439°C/W (steady-state, minimal pad) and 291°C/W (2oz copper bias), confirming its suitability for thermally isolated, low-power load switch nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum blocking voltage before avalanche; sets upper limit for input rail in 3.3V/5V systems. |
| RDS(ON) @ VGS = 1.8V | 6Ω - Enables functional switching from 1.8V GPIOs; yields ~120mW conduction loss at 20mA. |
| VGS(TH) Max | 1.0V - Guarantees reliable turn-on with 1.2V logic families; eliminates need for level-shifting circuitry. |
| Ciss | 21.5pF - Low gate charge (Qg = 0.35nC) reduces driver power and EMI during 10MHz-class switching. |
| PD (2oz copper) | 0.43W - Supports 240mA continuous operation at 25°C ambient with thermal bias; defines safe load current ceiling. |
| Package | SOT523 - 1.6 × 1.6 × 0.6mm footprint; requires precise stencil design and reflow profile for void-free solder joints. |
Pinout & Package
SOT523 is a 3-terminal ultra-small surface-mount plastic package with matte tin–annealed terminals on Alloy 42 leadframe, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts 0–10V signals; ESD-protected (HBM >2kV); drives with <0.35nC total charge. |
| S | Source | Reference node for gate drive; connects to system ground or low-side return path; carries full load current. |
| D | Drain | High-side output terminal; connects to supply rail or switched load; withstands 20V transient spikes. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) ≤ 1.0V ensures robust turn-on from 1.8V microcontrollers without external biasing. |
| Low RDS(ON) at low VGS | 6Ω @ 1.8V enables <100mW dissipation in 200mA load switches-critical for battery-powered wearables. |
| ESD-protected gate | HBM rating >2kV allows safe handling and board-level assembly without special ESD controls. |
| Green, halogen-free construction | Meets IEC 61249-2-21; Br+Cl <1500ppm, Sb <1000ppm-compliant with automotive and medical RoHS requirements. |
Applications
| Battery-Powered Load Switch | Low-Voltage DC-DC Enable Control |
|---|---|
|
Use Scenario: Power gating of BLE radio modules in coin-cell–powered IoT sensors during sleep mode. IC Role / Device Role / Timing Role: High-side load switch controlled by MCU GPIO; toggled at 1Hz–10Hz duty cycle. Use Value: 6Ω RDS(ON) at 1.8V drive limits leakage to <1μA off-state and drop to <120mV at 20mA, extending battery life >30%. |
Use Scenario: Enabling/disabling buck converter output stage in USB-C PD sink applications with 3.3V logic control. IC Role / Device Role / Timing Role: Logic-level interface between controller and power stage; responds within 10ns to enable/disable commands. Use Value: Fast tD(ON)/tF (5.6ns/27.6ns) prevents shoot-through during sequencing; low Ciss minimizes controller loading. |
| USB Port Power Management | Wearable Sensor Power Domain Isolation |
|
Use Scenario: Overcurrent-protected VBUS switching in portable USB hubs with 5V input and 1.8V/3.3V logic supervision. IC Role / Device Role / Timing Role: Low-side current-sense switch; placed between VBUS and downstream port; driven by dedicated USB controller. Use Value: 0.3A rating and 3Ω RDS(ON) @ 4.5V support 1.5W delivery per port; low IDSS (<1μA) prevents standby drain. |
Use Scenario: Isolating ECG front-end analog domain from digital processor during measurement cycles in patch-style monitors. IC Role / Device Role / Timing Role: Precision power gate; activated synchronously with ADC sampling window to minimize noise coupling. Use Value: Sub-1V VGS(TH) ensures clean turn-on timing with 1.2V reference clocks; 0.002g mass avoids mechanical stress on flexible PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | VDSS = 20V, RDS(ON) = 2.5Ω @ 4.5V but VGS(TH) = 1.2V max; SOT-323 package (larger, 2.1× footprint). | Higher gate threshold requires ≥2.5V logic; unsuitable for 1.8V-only systems; better thermal derating due to larger pad area. | Select when board layout permits SOT-323 and gate drive voltage exceeds 2.5V; avoid for 1.8V GPIO interfaces. |
| AO3414 | VDSS = 20V, RDS(ON) = 5.5Ω @ 2.5V but VGS(TH) = 0.7–1.4V (wider spread); SOT-23 package (3.0× larger than SOT523). | Statistical VGS(TH) variation increases risk of incomplete turn-on at 1.8V; larger size impedes ultra-dense wearable layouts. | Acceptable only with 2.5V+ gate drive and where SOT-23 placement is feasible; not recommended for 1.8V deterministic switching. |
Compared with DMN2991UT-7, DMN2004LK-7 offers lower RDS(ON) but fails at 1.8V drive, while AO3414 introduces parametric uncertainty in threshold voltage-making DMN2991UT-7 uniquely suited for guaranteed 1.8V-compatible, space-constrained load switching.
Availability
DMN2991UT-7 is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage DC-DC enable control, and USB port power management requiring stable component supply, consistent SOT523 sourcing, and RoHS-compliant green packaging.
Supply support for DMN2991UT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The DMN2991UT-7 belongs to Diodes' "Logic-Level MOSFET" product line, engineered specifically for direct interfacing with low-voltage digital logic in portable and energy-sensitive applications.
FAQ
What is the maximum continuous drain current for DMN2991UT-7 at 75°C ambient?
The datasheet specifies 0.24A continuous drain current at TA = +75°C with standard FR-4 mounting (2oz copper bias not applied). This derating reflects junction-to-ambient thermal resistance of 439°C/W and 150°C maximum junction temperature. Operation above this current requires thermal modeling or enhanced PCB copper.
Can DMN2991UT-7 be used in reverse conduction (source-to-drain) mode?
Yes-the integrated body diode supports forward conduction from source to drain with VSD = 0.8–1.0V at 150mA and TJ = 25°C. However, reverse recovery is not characterized, and it is not rated for repetitive reverse recovery stress; use only in unidirectional, non-switching freewheeling roles.
Is DMN2991UT-7 qualified for automotive applications under AEC-Q101?
No-DMN2991UT-7 is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing; this part is intended for commercial and industrial applications only.
What is the gate charge required to fully switch DMN2991UT-7 at 4.5V?
Total gate charge Qg is 0.35nC at VGS = 4.5V, VDS = 10V, and ID = 250mA. This value includes both gate-source (Qgs = 0.07nC) and gate-drain (Qgd = 0.08nC) components, defining minimum driver current needed for nanosecond-scale transitions.
DMN2991UT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 21.5 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DMN2991UT-7 FAQ
1.How can I place an order for DMN2991UT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2991UT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2991UT-7 reliable?
The price and inventory of DMN2991UT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2991UT-7 is usually 5 days.
3.What payment methods are accepted for DMN2991UT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2991UT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2991UT-7?
DMN2991UT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2991UT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2991UT-7?
For technical support, including DMN2991UT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2991UT-7 requirements.
6.How does Aetrix verify that DMN2991UT-7 is sourced from the original manufacturer or authorized distributors?
All DMN2991UT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2991UT-7 meets industry standards.
7.What is the process for return or replacement of DMN2991UT-7?
All DMN2991UT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2991UT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2991UT-7 part is unused and in its original packaging.
Return procedure for DMN2991UT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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