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Diodes Incorporated DMN2991UTQ-13
- Part No.:
- DMN2991UTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-523
- Datasheet:
-
DMN2991UTQ-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT523 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:2,623
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Product details
Overview
DMN2991UTQ-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 20V VDSS, with RDS(ON) = 3.0 Ω @ VGS = 4.5V and ID = 0.3A at TA = +25°C. It features ultra-low gate threshold voltage (VGS(TH) ≤ 1.0V), low input capacitance (Ciss = 21.5 pF), and AEC-Q101 qualification-designed for space-constrained automotive load switching and DC-DC converter power path control.
For engineers reviewing the DMN2991UTQ-13 datasheet, DMN2991UTQ-13 pinout, DMN2991UTQ-13 application, or DMN2991UTQ-13 equivalent, key selection criteria include its 1.0V max VGS(TH) enabling direct GPIO drive from 1.8V logic, 0.28W PD on FR-4, SOT523 footprint compatibility, and AEC-Q101 qualification for under-hood power management.
Technical Context
This MOSFET uses planar silicon process to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 5.6 ns, tF = 27.6 ns) and low gate charge (Qg = 0.35 nC). Its ESD-protected gate and ±10V VGSS rating support robust handling in automated assembly.
The device operates across –55°C to +150°C junction temperature range, with normalized RDS(ON) variation <1.8× over that range at VGS = 4.5V. Its body diode exhibits VSD = 0.8–1.0V at IS = 150mA, supporting synchronous rectification and reverse-current blocking in compact power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 12V automotive and 5V/3.3V system rail protection |
| RDS(ON) | 3.0 Ω @ VGS = 4.5V - Enables <100 mW conduction loss at 0.18A, suitable for low-power load switching |
| VGS(TH) | ≤ 1.0 V - Guarantees turn-on with 1.2V–1.8V logic outputs, eliminating level-shifter requirement |
| Ciss | 21.5 pF - Limits gate drive current demand and enables clean switching with low-value gate resistors |
| PD | 0.28 W (FR-4, min pad) - Sets thermal limit for continuous operation without heatsinking in 1.6 mm × 1.6 mm area |
| Qg | 0.35 nC - Allows full switching in <10 ns with 35 mA peak gate current, reducing drive complexity |
| AEC-Q101 | Qualified - Validated for automotive applications including infotainment power sequencing and sensor bias control |
Pinout & Package
Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.75 mm), moisture sensitivity level 1, matte tin–annealed terminals, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts logic-level gate drive; ESD-protected; requires ≤10V swing for full enhancement |
| S (Source) | Reference node / current return | Internally connected to substrate; used as common reference for gate drive and load return path |
| D (Drain) | Power output terminal | Carries switched load current up to 0.3A; connects to higher-potential rail in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VGS(TH) | Max 1.0V ensures reliable turn-on from 1.2V/1.8V microcontroller GPIO without external biasing |
| Low Ciss & Qg | 21.5 pF / 0.35 nC minimizes gate drive power and enables >1 MHz switching in space-limited DC-DC stages |
| AEC-Q101 qualification | Validated for automotive use including PPAP submission and IATF 16949 manufacturing traceability |
| SOT523 footprint | 1.6 mm × 1.6 mm outline supports high-density PCB layouts in telematics modules and ADAS sensors |
| ESD-protected gate | HBM ≥ 2 kV per JESD22-A114 ensures robustness during reflow and post-assembly handling |
Applications
| Automotive Infotainment Power Sequencing | USB-C Port Load Switching |
|---|---|
|
Use Scenario: Controlled power-up of display backlight and audio amplifier ICs after MCU initialization in head unit. IC Role / Device Role: Low-voltage N-channel load switch enabling precise timing-controlled rail enablement. Use Value: 1.0V VGS(TH) allows direct drive from 1.2V core logic; SOT523 saves board space vs. SOT-23 in multi-rail sequencers. |
Use Scenario: Hot-swap protection and inrush limiting for USB-C VBUS supply in portable docking stations. IC Role / Device Role: Single-N MOSFET acting as controlled pass element between upstream source and downstream port. Use Value: 20V rating covers USB PD 3.0 up to 20V; low RDS(ON) limits voltage drop to <0.6V at 200mA load. |
| IoT Sensor Node Power Gating | Wearable Device Battery Management |
|
Use Scenario: Disabling RF transceiver and environmental sensor subsystems during deep sleep to reduce quiescent current. IC Role / Device Role: Ultra-low-threshold load switch isolating non-critical peripherals from main LDO output. Use Value: Sub-1μA IDSS and 1.0V VGS(TH) ensure near-zero leakage and guaranteed turn-off with 0V gate drive. |
Use Scenario: Isolating charging circuitry from battery during standby to prevent parasitic discharge in hearables. IC Role / Device Role: Reverse-current blocking switch placed between linear charger IC and Li-ion cell. Use Value: Body diode VSD = 0.8V prevents backfeed; 0.28W PD sustains 250mA continuous current without derating in 2.5mm² area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-threshold load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | RDS(ON) = 1.2Ω @ VGS = 2.5V; SOT-723 package; same AEC-Q101 grade | Lower RDS(ON) supports higher current (0.5A), but larger footprint (1.2 × 1.2 mm vs. SOT523's 1.6 × 1.6 mm) | Select when <150mΩ on-resistance is required and board area permits SOT-723 |
| AO3400A | RDS(ON) = 0.042Ω @ VGS = 10V; SOT-23; no AEC-Q101; VGS(TH) = 0.7–1.4V (wider spread) | Higher current capability (5.7A), but lacks automotive qualification and has less predictable turn-on at 1.8V | Select for cost-sensitive industrial DC-DC where AEC-Q101 is not mandated and gate drive is ≥2.5V |
Compared with DMN2991UTQ-13, DMN2004LKQ-7 offers lower conduction loss in same automotive-grade reliability but occupies more PCB area, while AO3400A delivers much higher current capacity at lower cost but sacrifices AEC-Q101 validation and gate-threshold consistency for low-voltage logic drive.
Availability
DMN2991UTQ-13 is available at Aetrix Electronics and suitable for automotive infotainment power sequencing, USB-C load switching, and IoT sensor node power gating requiring stable component supply, AEC-Q101 compliance, and ultra-small footprint.
Supply support for DMN2991UTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN2991UTQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained automotive and portable electronics power management where low-threshold drive and footprint efficiency are critical.
FAQ
Is DMN2991UTQ-13 suitable for 1.8V GPIO drive without level shifting?
Yes. With VGS(TH) guaranteed ≤ 1.0V and typical 0.5V, the device fully enhances using standard 1.8V logic outputs. At VGS = 1.8V, RDS(ON) is 6.0Ω max and ID = 0.21A, sufficient for sub-200mA load switching in wearables and sensors.
What is the maximum continuous drain current at 85°C ambient?
At TA = +85°C, the continuous drain current is derated to 0.24A per the datasheet's absolute maximum ratings table. This reflects thermal limitation due to RθJA = 439°C/W on standard FR-4; using 2oz copper improves PD to 0.43W and supports 0.28A at 85°C.
Does DMN2991UTQ-13 include integrated ESD protection?
Yes. The device integrates gate oxide ESD protection rated to ≥2 kV HBM per JESD22-A114. This eliminates need for external TVS diodes in most board-level ESD environments and supports direct placement near connectors in automotive modules.
Can DMN2991UTQ-13 be used in reverse-battery protection circuits?
No. As a single N-channel MOSFET in SOT523, it lacks internal back-to-back configuration. For reverse-battery protection, a P-channel device (e.g., DMG1012T) or dual-N solution is required. DMN2991UTQ-13 supports only forward-conduction load switching with source grounded.
DMN2991UTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 21.5 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DMN2991UTQ-13 FAQ
1.How can I place an order for DMN2991UTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2991UTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2991UTQ-13 reliable?
The price and inventory of DMN2991UTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2991UTQ-13 is usually 5 days.
3.What payment methods are accepted for DMN2991UTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2991UTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2991UTQ-13?
DMN2991UTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2991UTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2991UTQ-13?
For technical support, including DMN2991UTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2991UTQ-13 requirements.
6.How does Aetrix verify that DMN2991UTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN2991UTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2991UTQ-13 meets industry standards.
7.What is the process for return or replacement of DMN2991UTQ-13?
All DMN2991UTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2991UTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2991UTQ-13 part is unused and in its original packaging.
Return procedure for DMN2991UTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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