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Diodes Incorporated DMN2992UFZ-7B

Part No.:
DMN2992UFZ-7B
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-XFDFN
Datasheet:
AetrixDMN2992UFZ-7B.pdf
Description:
MOSFET BVDSS: 8V~24V X2-DFN0606-
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,707

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Product details

Overview

DMN2992UFZ-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in a 0.62mm × 0.62mm X2-DFN0606-3 package, featuring 0.99Ω RDS(ON) at VGS = 4.5V, 1.0V max gate threshold voltage, and ESD-protected gate. It serves as a low-voltage load switch in space-constrained power-management circuits such as battery-powered sensor nodes and USB port protection.

For engineers reviewing the DMN2992UFZ-7B datasheet, DMN2992UFZ-7B pinout, DMN2992UFZ-7B application, or DMN2992UFZ-7B equivalent, key selection criteria include ultra-low VGS(TH), sub-1Ω on-resistance at 1.8V drive, thermal resistance of 295°C/W, and compatibility with 0.4mm maximum profile PCB layouts.

Technical Context

This MOSFET uses planar silicon process technology optimized for low-voltage logic-level gate drive, enabling full enhancement at VGS ≥ 1.5V. Its RDS(ON) remains ≤2.4Ω down to VGS = 1.5V, supporting direct interfacing with 1.8V and 2.5V microcontroller GPIOs without level-shifting.

The device integrates an intrinsic body diode with 0.7–1.0V forward voltage at 150mA and exhibits Ciss = 15.6pF, Coss = 5.4pF, and Qg = 0.41nC - parameters that support fast switching (tr = 4.5ns) while minimizing capacitive losses in high-frequency DC-DC control paths.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - supports input rails up to 16V after derating, suitable for single-cell Li-ion and 3.3V/5V system bus switching
RDS(ON) 0.99Ω @ VGS = 4.5V - delivers <450mW conduction loss at 500mA, enabling thermally safe operation on FR-4 without heatsinking
VGS(TH) 0.4–1.0V - ensures reliable turn-on with 1.8V I/O domains and eliminates need for external gate drivers in low-power logic interfaces
ID (max) 530mA @ TA = 25°C - sufficient for driving LED strings, small solenoids, or bias rails in portable instrumentation
RθJA 295°C/W - defines thermal limit of ~150°C junction rise under 420mW steady-state dissipation on minimal pad layout
Ciss 15.6pF - contributes to low gate-drive energy (Qg = 0.41nC), reducing MCU GPIO stress during frequent switching cycles

Pinout & Package

Package: X2-DFN0606-3 - 0.62mm × 0.62mm footprint, 0.4mm max height, 3-terminal leadless plastic package with NiPdAu-plated copper leadframe.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Current return path for channel conduction Internally connected to exposed thermal pad; must be soldered to PCB ground plane for thermal and electrical integrity
2 (Gate) Control electrode for channel modulation ESD-protected input requiring no external clamping; driven directly by 1.8V–4.5V logic outputs
3 (Drain) High-side current output node Connected to load supply rail; handles bidirectional current during body-diode conduction in flyback or reverse-polarity protection

Key Features

Feature Design Value
Ultra-low gate threshold VGS(TH) ≤ 1.0V enables robust turn-on with 1.8V MCUs and eliminates bootstrapping in compact power switches
Sub-milliohm RDS(ON) at low VGS 1.8Ω @ VGS = 1.8V allows efficient 3.3V rail switching without gate boosting circuitry
0.4mm max package height Enables use in ultra-thin wearables and stacked PCB assemblies where Z-height is constrained to <0.5mm
ESD-protected gate HBM rating ≥ 2kV per JESD22-A114 - reduces need for external TVS on gate traces in handheld ESD-prone environments
Halogen- and antimony-free Meets IPC-1752A Class 3 reporting requirements for green electronics compliance in EU and APAC markets

Applications

USB Port Power Switching Low-Voltage Sensor Bias Control

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in portable medical monitors.

IC Role / Device Role / Timing Role: Load switch controlling 5V rail delivery with <10μs turn-on delay and zero reverse-current leakage.

Use Value: Prevents backfeed into host controller during hot-plug events while maintaining <0.5V drop at 300mA load current.

Use Scenario: Activating analog front-end bias for MEMS accelerometers in battery-operated IoT edge nodes.

IC Role / Device Role / Timing Role: Precision enable switch sequencing bias voltage to sensor ICs only during active measurement windows.

Use Value: Reduces quiescent current by >95% versus always-on LDO, extending coin-cell life beyond 3 years.

Li-ion Battery Protection FET GPIO-Driven LED Indicator Driver

Use Scenario: Secondary over-discharge protection switch in single-cell battery packs for Bluetooth earbuds.

IC Role / Device Role / Timing Role: Low-RDS(ON) series switch placed between cell cathode and load, controlled by fuel-gauge IC.

Use Value: Limits voltage drop to <150mV at 400mA discharge, preserving usable capacity and avoiding false low-battery triggers.

Use Scenario: Driving status LEDs on smart home hubs with mixed 1.8V/3.3V logic domains.

IC Role / Device Role / Timing Role: Current-sinking switch interfacing MCU GPIO to common-anode LED arrays.

Use Value: Eliminates need for discrete base resistors and level shifters, reducing BOM count by two components per LED channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK3-7 RDS(ON) = 1.2Ω @ VGS = 2.5V; larger 1.0mm × 1.0mm SOT-723 package; higher 350mW PD Better thermal margin but 2.5× footprint area; requires re-layout for space-constrained designs Select when board real estate permits and higher continuous current (>600mA) is needed
AO3414 RDS(ON) = 50mΩ @ VGS = 4.5V; SO-23 package; VGS(TH) = 0.7–1.4V; no ESD protection Lower on-resistance but lacks integrated ESD guard; incompatible with 1.8V logic due to higher VGS(TH) min Select for 3.3V/5V systems where gate drive voltage ≥4.5V and external ESD protection is already present

Compared with DMN2992UFZ-7B, DMN2004LK3-7 trades size for thermal headroom, while AO3414 sacrifices gate-drive compatibility and ESD robustness for lower RDS(ON) - making DMN2992UFZ-7B optimal for miniaturized 1.8V–2.5V logic-switched loads where reliability and footprint are primary constraints.

Availability

DMN2992UFZ-7B is available at Aetrix Electronics and suitable for USB power switching, sensor bias control, Li-ion battery protection, and GPIO-driven LED driver applications requiring stable component supply across production lifecycles.

Supply support for DMN2992UFZ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN2992UFZ-7B belongs to Diodes' X2-DFN logic-level MOSFET product line, engineered specifically for ultra-compact, low-voltage power switching in portable and battery-powered electronics where gate drive voltage and board area are critical constraints.

FAQ

What is the maximum continuous drain current for DMN2992UFZ-7B at 85°C ambient?

The maximum continuous drain current is 430mA at TA = +85°C, as specified in the Absolute Maximum Ratings table. This value assumes mounting on an FR-4 PCB with minimum recommended pad layout and accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures.

Does DMN2992UFZ-7B require external gate resistors for ESD protection?

No - the device features an integrated ESD protection structure on the gate terminal rated to ≥2kV HBM per JESD22-A114. External gate resistors are unnecessary for ESD mitigation, though a small series resistor (≤10Ω) may be used to dampen ringing in high-speed switching applications.

Can DMN2992UFZ-7B be used in reverse-biased configurations?

Yes - its intrinsic body diode supports source-to-drain conduction with VSD = 0.7–1.0V at 150mA. It is suitable for reverse-polarity protection and flyback energy recirculation, provided peak reverse current stays within the 1500mA pulsed rating and junction temperature remains below 150°C.

Is the X2-DFN0606-3 package compatible with standard reflow profiles?

Yes - the package is qualified to JEDEC J-STD-020 moisture sensitivity level 1 and supports standard Pb-free reflow profiles (peak temperature ≤260°C). The NiPdAu finish ensures reliable solderability per MIL-STD-202, Method 208, with no special pre-bake required for dry storage conditions.

DMN2992UFZ-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-XFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.41 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
15.6 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
420mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN0606-3

DMN2992UFZ-7B FAQ

1.How can I place an order for DMN2992UFZ-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2992UFZ-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2992UFZ-7B reliable?

The price and inventory of DMN2992UFZ-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2992UFZ-7B is usually 5 days.

3.What payment methods are accepted for DMN2992UFZ-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2992UFZ-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2992UFZ-7B?

DMN2992UFZ-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2992UFZ-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2992UFZ-7B?

For technical support, including DMN2992UFZ-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2992UFZ-7B requirements.

6.How does Aetrix verify that DMN2992UFZ-7B is sourced from the original manufacturer or authorized distributors?

All DMN2992UFZ-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2992UFZ-7B meets industry standards.

7.What is the process for return or replacement of DMN2992UFZ-7B?

All DMN2992UFZ-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2992UFZ-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2992UFZ-7B part is unused and in its original packaging.

Return procedure for DMN2992UFZ-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2992UFZ-7B Tags

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