Diodes Incorporated DMN29M9UFDF-13

Overview

DMN29M9UFDF-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 13.5mΩ R_DS(ON) at V_GS = 4.5V, 11A continuous drain current at T_A = +25°C, and low 0.6mm profile. It serves as a high-efficiency load switch in portable power management circuits requiring compact, low-threshold switching.

For engineers reviewing the DMN29M9UFDF-13 datasheet, DMN29M9UFDF-13 pinout, DMN29M9UFDF-13 application, or DMN29M9UFDF-13 equivalent, key selection criteria include its 1.2V max gate threshold voltage, 60°C/W thermal resistance with enhanced copper pad layout, ESD-protected gate, and compatibility with 1.8V–4.5V logic-level drive in space-constrained DC-DC and battery protection designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while preserving fast switching performance: t_D(ON) = 6ns and t_D(OFF) = 48ns at V_GS = 4.5V, V_DD = 8V, and R_G = 1.8Ω. Its gate charge is 7.3nC at V_GS = 4.5V, enabling efficient operation in high-frequency synchronous buck converters.

The device integrates an intrinsic body diode with V_SD = 0.59V typical at I_S = 0.5A and supports avalanche energy of 0.6mJ (L = 0.1mH). Its junction-to-case thermal resistance is 8.4°C/W, and it operates across –55°C to +150°C, qualified per J-STD-020 Level 1 moisture sensitivity.

Key Specifications

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0mm × 2.0mm footprint, 0.6mm height, NiPdAu-plated copper leadframe, UL 94V-0 molding compound, and moisture sensitivity Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with DMN29M9UFDF-13, DMN2026UFD-7 trades 2.5mΩ higher R_DS(ON) for marginal cost reduction but risks marginal turn-on with weak 1.8V drivers, while AO3414's SO-23 form factor and 50mΩ R_DS(ON) make it unsuitable for space- or efficiency-sensitive portable designs.

Availability

DMN29M9UFDF-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, smartphone battery protection circuits, wireless earbud charging cases, and IoT sensor node power gating requiring stable component supply and consistent parametric performance.

Supply support for DMN29M9UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage load switching in portable and battery-powered electronics where size, thermal performance, and logic-level compatibility are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN29M9UFDF-13 supports 8.8A continuous drain current at T_A = +70°C with 1-inch² 2oz copper pad layout (R_θJA = 60°C/W), verified per datasheet Note 6. Derating follows linear interpolation between 11A at 25°C and 8.8A at 70°C, reaching zero at ~125°C ambient under those thermal conditions.

Is the exposed pad electrically isolated or internally connected?

The exposed pad (Pin 6) is internally connected to the source terminal and must be soldered to a PCB copper pour tied to the source net. It is not electrically isolated and serves both thermal conduction and electrical return functions-failure to connect it degrades R_θJA from 60°C/W to 95°C/W and increases R_DS(ON) by up to 15% due to elevated junction temperature.

Does this MOSFET require external gate protection against ESD?

No. The DMN29M9UFDF-13 integrates on-chip gate protection diodes rated for ≥2kV HBM ESD (per Diodes' internal qualification), eliminating the need for external TVS or RC networks in standard handling and board-level environments. This is confirmed in the "Features" section and "Equivalent Circuit" diagram of the datasheet.

Can it operate reliably with a 1.8V gate drive?

Yes. With a guaranteed V_GS(TH) maximum of 1.2V and typical R_DS(ON) of 14.6mΩ at V_GS = 1.8V/ID = 1A, the device delivers usable on-resistance at 1.8V. At 1.8V drive, it sustains ≥1A continuous current with <27mW conduction loss-validated in Figure 4 and Table "Electrical Characteristics" of DS42329 Rev. 3-2.