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Diodes Incorporated DMN29M9UFDF-7
- Part No.:
- DMN29M9UFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN29M9UFDF-7.pdf
- Description:
- MOSFET BVDSS: 25V~30V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:7,680
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Product details
Overview
DMN29M9UFDF-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 13.5mΩ RDS(ON) @ VGS = 4.5V, 11A continuous drain current at TA = +25°C, and low 0.6mm profile. It serves as a high-efficiency load switch in space-constrained power management circuits such as USB port protection and battery charging paths.
For engineers reviewing the DMN29M9UFDF-7 datasheet, DMN29M9UFDF-7 pinout, DMN29M9UFDF-7 application, or DMN29M9UFDF-7 equivalent, key selection criteria include its 1.2V gate threshold voltage enabling 1.8V logic compatibility, 655pF input capacitance for fast switching, and ESD-protected gate ensuring robust handling in automated assembly.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining sub-10ns turn-on delay and 48ns turn-off delay under 1.8Ω gate drive. Its body diode exhibits 0.59V forward voltage at 0.5A, supporting synchronous rectification in buck converters.
The device is characterized with dual thermal ratings: 95°C/W RθJA on minimal pad layout and 60°C/W on 1-inch² copper, reflecting design flexibility across compact PCBs and thermally demanding layouts. Junction temperature range spans −55°C to +150°C, validated per JESD22-A108.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports 5V/12V rail switching without avalanche risk in standard power domains |
| RDS(ON) | 13.5mΩ @ VGS = 4.5V - enables ≤67.5mW conduction loss at 5A, critical for thermal budget in thin-profile designs |
| ID (max) | 11A @ TA = +25°C - sufficient for USB-C PD 3.0 load switching and portable device power gating |
| VGS(TH) | 0.5–1.2V - ensures reliable turn-on with 1.8V/2.5V microcontroller GPIOs without level-shifting |
| Ciss | 655pF - balances switching speed and gate drive strength for <10ns tD(ON) with low-RG drivers |
| Qg | 7.3nC @ VGS = 4.5V - minimizes gate charge energy, reducing driver power dissipation in high-frequency PWM |
| RθJA | 60°C/W (1-inch² copper) - allows 2W continuous dissipation at ΔT = 120°C, supporting unheatsinked operation |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0mm × 2.0mm footprint, 0.6mm height, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Top-left corner marker) | Source | Primary current return path; connected to PCB ground plane for low-inductance thermal and electrical path |
| 2 | Gate | Control input requiring <10μA leakage; ESD-protected to ±2kV HBM per JESD22-A114 |
| 3 | Drain | High-side or low-side power path node; exposed pad (Pin 6) ties directly to drain for thermal conduction |
| 4 | Source | Redundant source connection; paralleled with Pin 1 to reduce bond wire resistance and improve current sharing |
| 5 | Gate | Secondary gate terminal; used with Pin 2 to lower effective gate resistance and improve switching consistency |
| 6 (Exposed pad) | Drain | Thermal and electrical anchor; must be soldered to ≥10mm² internal/external copper for RθJC = 8.4°C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 | 0.6mm max height enables use in ultra-thin consumer electronics (<1.2mm total board thickness) |
| Low gate threshold voltage | VGS(TH) down to 0.5V ensures turn-on with 1.8V I/O, eliminating need for external level shifters |
| ESD-protected gate | ±2kV HBM rating reduces risk of field failure during SMT reflow and post-assembly handling |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and JEDEC JS709E green standards for global environmental compliance |
| Optimized RDS(ON)/Qg ratio | 13.5mΩ/7.3nC delivers 1.85mΩ·nC - superior figure-of-merit for high-frequency DC-DC point-of-load applications |
Applications
| USB-C Port Protection | Battery Charging Path Control |
|---|---|
|
Use Scenario: Isolating VBUS during hot-plug events and reverse-current blocking in dual-role USB-C ports. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path between controller and connector. Use Value: 13.5mΩ RDS(ON) limits voltage drop to <68mV at 5A, preserving USB-C PD 3.0 voltage regulation margins. |
Use Scenario: Enabling/disabling charging current flow from adapter to Li-ion battery in smartphones and wearables. IC Role / Device Role / Timing Role: High-side power switch placed between charger IC output and battery terminal. Use Value: 1.2V VGS(TH) allows direct control by 1.8V PMIC GPIO, eliminating discrete bias circuitry. |
| Always-On System Rail Switching | IoT Sensor Node Power Gating |
|
Use Scenario: Selectively powering subsystems (e.g., BLE radio, display) in battery-operated edge devices during sleep/wake cycles. IC Role / Device Role / Timing Role: Load switch managing power domain isolation between main SoC and peripheral modules. Use Value: 10.3A ID @ VGS = 2.5V supports burst-mode sensor activation without thermal throttling. |
Use Scenario: Shutting off supply to passive sensors (e.g., temperature, humidity) between measurement intervals to minimize quiescent current. IC Role / Device Role / Timing Role: Ultra-low-leakage power gate placed upstream of LDOs feeding analog front-ends. Use Value: 1μA IDSS at 16V ensures <16nW standby loss, extending multi-year battery life in LPWAN nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2021UFDF-7 | RDS(ON) = 15.5mΩ @ 4.5V; higher VGS(TH) (0.7–1.4V); same U-DFN2020-6 package | Slightly higher conduction loss; less suitable for 1.8V logic drive | Select when cost sensitivity outweighs 1.5mΩ RDS(ON) advantage and 2.5V+ control is available |
| AO3414 | RDS(ON) = 35mΩ @ 4.5V; SO-23 package (3.0mm × 1.4mm); no ESD protection | Larger footprint; requires external ESD protection; unsuitable for <1mm board height targets | Choose only for legacy SO-23 board reuse where thermal margin exceeds 1.2W and ESD environment is controlled |
Compared with DMN29M9UFDF-7, DMN2021UFDF-7 trades 1.5mΩ RDS(ON) for marginal cost reduction but retains identical thermal and package constraints, while AO3414 sacrifices both efficiency and miniaturization to support through-hole or larger SMT transitions.
Availability
DMN29M9UFDF-7 is available at Aetrix Electronics and suitable for USB-C power delivery, battery charging path control, and always-on system rail switching requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMN29M9UFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' "Ultra-Low Profile Power" product line, engineered specifically for space-constrained portable electronics where thermal density and board thickness are primary design constraints.
FAQ
What is the maximum safe operating junction temperature for DMN29M9UFDF-7?
The absolute maximum junction temperature is +150°C, verified per JESD22-A104. Operation above this limit risks permanent degradation of gate oxide integrity and increased RDS(ON). Derating is required above +125°C ambient when using the 60°C/W thermal resistance configuration.
Does DMN29M9UFDF-7 require an external gate resistor for stability?
No external gate resistor is required for basic switching; the device's 6.6Ω intrinsic gate resistance and 72pF Crss provide inherent damping. However, a 1–5Ω series resistor is recommended when driving from high-impedance sources to suppress ringing caused by PCB trace inductance >2nH.
Can DMN29M9UFDF-7 be used in automotive applications?
While not AEC-Q101 qualified, the device shares the same die and process as Diodes' automotive-grade variants. For non-safety-critical functions like infotainment power gating, it may be deployed with customer-specific qualification; full automotive use requires contacting Diodes for PPAP-capable alternatives.
How does the exposed drain pad (Pin 6) affect PCB layout requirements?
The exposed pad must be soldered to a solid copper area ≥10mm² connected to the drain net; splitting or isolating it increases RθJA by >25% and risks thermal runaway. Thermal vias (≥4×0.3mm diameter) to inner ground planes are mandatory for sustained >2W operation.
DMN29M9UFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.6 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 655 pF @ 8 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN29M9UFDF-7 FAQ
1.How can I place an order for DMN29M9UFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN29M9UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN29M9UFDF-7 reliable?
The price and inventory of DMN29M9UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN29M9UFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN29M9UFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN29M9UFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN29M9UFDF-7?
DMN29M9UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN29M9UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN29M9UFDF-7?
For technical support, including DMN29M9UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN29M9UFDF-7 requirements.
6.How does Aetrix verify that DMN29M9UFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN29M9UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN29M9UFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN29M9UFDF-7?
All DMN29M9UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN29M9UFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN29M9UFDF-7 part is unused and in its original packaging.
Return procedure for DMN29M9UFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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