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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3005LK3-13

Name: DMN3005LK3-13
Brand: Diodes Incorporated
SKU: DMN3005LK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3005LK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMN3005LK3-13.pdf

Description:: MOSFET N-CH 30V 14.5A TO252-3

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Product details

Overview

DMN3005LK3-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 30 V V_DSS, 22 A continuous drain current (T_A = +25°C, high-copper PCB), and 2.5 mΩ typical R_DS(on) at V_GS = 10 V. It delivers low conduction loss and fast switching in DC-DC converters, motor drivers, and load-switching circuits.

For engineers reviewing the DMN3005LK3-13 datasheet, DMN3005LK3-13 pinout, DMN3005LK3-13 application, or DMN3005LK3-13 equivalent, key selection criteria include R_DS(on) at 4.5 V drive, body diode recovery performance (t_rr = 23.5 ns), thermal resistance (R_θJA = 30.8 °C/W on 2 oz copper), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.0–2.0 V and supports logic-level drive down to 4.5 V. Its low input capacitance (C_iss = 4342 pF) and fast turn-on delay (7.9 ns) enable high-frequency switching in synchronous buck stages.

The integrated body diode exhibits low forward voltage (V_SD = 0.8 V typ. at I_S = 20 A) and controlled reverse recovery (Q_rr = 15.6 nC), reducing switching losses in freewheeling paths. Thermal design leverages the TO252 package's exposed drain pad for efficient heat transfer to PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; suitable for 24 V nominal bus systems.
R_DS(on) @ V_GS = 10 V	2.5 mΩ typ. - Enables <100 mW conduction loss at 20 A, critical for high-efficiency power stages.
R_DS(on) @ V_GS = 4.5 V	4.5 mΩ max. - Ensures robust operation with 3.3 V or 5 V gate drivers without significant derating.
Q_g	46.9 nC - Determines gate drive power requirement; compatible with standard MOSFET drivers at ≤1 MHz.
t_rr	23.5 ns - Limits reverse recovery energy loss during hard commutation in half-bridge topologies.
T_J Range	−55 to +150 °C - Supports under-hood automotive environments and industrial ambient extremes.
AEC-Q101 Qualified	Yes - Validated for automotive applications including engine control modules and body electronics.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal conduction. Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output terminal	Connected to exposed metal pad; primary thermal path to PCB; must be routed with high-current copper pour.
S (Source)	Reference node for gate drive and current return	Low-inductance connection required for stable switching; ties to power ground plane.
G (Gate)	Control input for channel modulation	High-impedance node; requires RC snubber or gate resistor (RG = 3 Ω used in characterization) to damp ringing.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	4.5 mΩ max. enables direct interface with 3.3 V microcontrollers and low-voltage PWM controllers.
Fast switching speed	Turn-on delay 7.9 ns and rise time 22.8 ns support >500 kHz switching frequencies in compact power supplies.
ESD protection	HBM-rated per JEDEC JS-001 - eliminates need for external ESD clamps in board-level handling.
AEC-Q101 qualification	Validated for temperature cycling, mechanical shock, and humidity testing - reduces qualification effort for automotive Tier-1 designs.

Applications

Automotive Body Control Module

Industrial DC-DC Converter

Use Scenario: Driving 12 V solenoids, relays, and LED arrays in door modules and lighting control units.

IC Role / Device Role / Timing Role: High-side or low-side load switch managing up to 20 A pulsed loads with minimal voltage drop.

Use Value: 2.5 mΩ R_DS(on) limits voltage drop to <50 mV at 20 A, preserving system efficiency and reducing thermal stress on PCB traces.

Use Scenario: Synchronous rectifier in 24 V input, 5 V/15 A isolated flyback or buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve conversion efficiency above 90%.

Use Value: Low Q_rr (15.6 nC) and fast t_rr (23.5 ns) minimize dead-time losses and reduce EMI generation during transition.

Motor Drive Half-Bridge

Hot-Swap Power Controller

Use Scenario: Low-side switch in 24 V brushed DC motor driver for HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: Fast-turning, low-loss switch operating at 20 kHz PWM with bidirectional current capability via body diode.

Use Value: Body diode V_SD = 0.8 V ensures low freewheeling loss during PWM off-time, improving thermal margin over discrete diode solutions.

Use Scenario: Inrush current limiter and fault-protected power rail for 12 V backplane in network switches and base station cards.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on slew rate and overcurrent shutdown response.

Use Value: Low input leakage (<100 nA) and high V_GSS (±20 V) allow reliable gate biasing in noisy hot-swap environments without external level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LFD-7	R_DS(on) = 3.2 mΩ min. at V_GS = 10 V; smaller DFN5060 package; no AEC-Q101 qualification.	Preferred for space-constrained consumer power stages where automotive qualification is not required.	Select when PCB area is limited and thermal budget allows higher R_DS(on); avoid for automotive use cases.
IPB033N04LGATMA1	R_DS(on) = 3.3 mΩ typ. at V_GS = 10 V; TO263 package; AEC-Q101 qualified; higher Q_g (63 nC).	Better suited for high-current (>30 A) industrial inverters requiring lower thermal resistance than TO252.	Choose when junction-to-case thermal path dominates and higher gate drive energy is acceptable.

Compared with DMN3005LK3-13, DMN3025LFD-7 trades AEC-Q101 compliance for smaller footprint, while IPB033N04LGATMA1 offers superior thermal performance in larger packages at the cost of increased gate drive demand and layout area.

Availability

DMN3005LK3-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and motor drive half-bridges requiring stable component supply and long-term lifecycle support.

Supply support for DMN3005LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This device belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive and industrial applications demanding high reliability, low R_DS(on), and fast switching under thermally constrained conditions.

FAQ

Is DMN3005LK3-13 recommended for new designs?

No - Diodes Incorporated explicitly marks this part as "NOT RECOMMENDED FOR NEW DESIGN" in its datasheet (Rev. 4-3, May 2013). While fully functional and supported, it has been superseded by newer-generation MOSFETs with improved R_DS(on), lower Q_g, and enhanced thermal performance. New designs should evaluate alternatives such as DMN3025LFD-7 or industry-standard replacements with updated qualification status.

What is the maximum continuous drain current at 85°C ambient?

At T_A = +85°C on a 2″ × 2″ FR-4 PCB with 2 oz copper, the continuous drain current is 16 A (Note 6). This rating assumes proper thermal pad layout per AP02001 and accounts for reduced R_θJA (30.8 °C/W). Derating below 16 A is required if PCB copper area or airflow is insufficient to maintain T_J ≤ 150°C.

Does DMN3005LK3-13 have integrated ESD protection?

Yes - the datasheet explicitly lists "ESD Protected" under Features and specifies HBM ESD rating per JEDEC JS-001. No external TVS or series resistors are required for standard handling and board-level ESD immunity. The gate oxide is hardened against human-body-model discharges up to the JEDEC Class 2 threshold (≥2 kV).

How does the body diode performance compare to discrete Schottky diodes?

The body diode has V_SD = 0.8 V typ. at 20 A and t_rr = 23.5 ns, outperforming many 30 V Schottky diodes in reverse recovery speed but with slightly higher forward voltage. Its Q_rr = 15.6 nC is significantly lower than standard PN diodes, enabling cleaner commutation in synchronous rectifiers without added snubbers.

DMN3005LK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46.9 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4342 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.68W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMN3005LK3-13 FAQ

1.How can I place an order for DMN3005LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3005LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3005LK3-13 reliable?

The price and inventory of DMN3005LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3005LK3-13 is usually 5 days.

3.What payment methods are accepted for DMN3005LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3005LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3005LK3-13?

DMN3005LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3005LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3005LK3-13?

For technical support, including DMN3005LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3005LK3-13 requirements.

6.How does Aetrix verify that DMN3005LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMN3005LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3005LK3-13 meets industry standards.

7.What is the process for return or replacement of DMN3005LK3-13?

All DMN3005LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3005LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3005LK3-13 part is unused and in its original packaging.

Return procedure for DMN3005LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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