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Diodes Incorporated DMN3006SCA6-7
- Part No.:
- DMN3006SCA6-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-SMD, No Lead
- Datasheet:
-
DMN3006SCA6-7.pdf
- Description:
- MOSFET 2N-CH 30V 13A X4-DSN3519
- Quantity:
- Payment:
- Shipping:
Inventory:5,290
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Product details
Overview
DMN3006SCA6-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 6-pin CSP package (X4-DSN3519-6), optimized for low on-resistance and fast switching in compact power management circuits. It delivers 4.8 mΩ RSS(ON) at VGS = 8 V, 13.0 A continuous source current at +25°C, and operates up to 30 V VSSS, targeting battery protection and load-switching functions in space-constrained portable electronics.
For engineers reviewing the DMN3006SCA6-7 datasheet, DMN3006SCA6-7 pinout, DMN3006SCA6-7 application, or DMN3006SCA6-7 equivalent, key selection criteria include its ultra-low profile (0.11 mm height), dual-source/dual-drain configuration, gate ESD protection, and thermal resistance of 68 °C/W under recommended PCB layout - critical for high-density battery management ICs and USB-C power delivery modules.
Technical Context
This device integrates two matched N-channel MOSFETs in a single chip-scale package with shared drain terminals (pins 3 & 4) and independent gate/source pairs (G1/S1 and G2/S2). Its design enables synchronous rectification or dual-path load switching without external paralleling.
It features a gate threshold voltage range of 1.3–2.2 V, supports logic-level drive down to 4.5 V, and maintains RSS(ON) stability across –55°C to +150°C junction temperature - verified by characterization curves for VGS(TH) and RSS(ON) vs. TJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 30 V - Maximum source-source blocking voltage; defines safe operating range in 3.3 V–24 V battery systems. |
| RSS(ON) @ VGS = 8 V | 4.8 mΩ - Enables <100 mW conduction loss at 10 A, supporting high-efficiency load switching in portable devices. |
| IS Continuous @ +25°C | 13.0 A - Sustained current capability with thermal derating to 10.5 A at +70°C ambient on FR-4 board. |
| Qg | 17.7 nC - Low total gate charge reduces driver power and switching losses in 1–2 MHz DC-DC applications. |
| RθJA (min pad) | 68 °C/W - Achievable with manufacturer-recommended copper area; enables 1.8 W power dissipation at +25°C ambient. |
| Package | X4-DSN3519-6 - 3.5 mm × 1.9 mm footprint, 0.11 mm height; compatible with fine-pitch automated assembly and ultra-thin end equipment. |
Pinout & Package
Package: X4-DSN3519-6 - ultra-thin chip-scale package with NiPdAu-plated terminals, moisture sensitivity level 1, and 0.0012 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate 1 | Independent control input for first MOSFET channel; accepts 0–20 V gate drive with ±10 µA leakage. |
| 2 | Source 1 | Return path for channel 1; electrically isolated from Source 2 for dual-switch configurations. |
| 3 | Drain | Common drain node shared by both MOSFETs; connects to high-side power rail or battery cathode. |
| 4 | Drain | Redundant drain terminal for enhanced current handling and thermal spreading; tied internally to Pin 3. |
| 5 | Source 2 | Return path for second MOSFET channel; enables independent load control or current sensing per channel. |
| 6 | Gate 2 | Independent control input for second MOSFET channel; identical electrical specs to Gate 1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two matched MOSFETs in one die enable redundant load switching or independent path control without discrete pairing. |
| Ultra-low profile (0.11 mm) | Supports <0.6 mm total Z-height in slim smartphones, wearables, and hearing aids where vertical space is constrained. |
| ESD-protected gate | HBM rating ≥2 kV (implied by "ESD Protection of Gate" in Features section); reduces risk of assembly damage and field failure. |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and Diodes' "Green" standard (<900 ppm Br+Cl, <1000 ppm Sb); meets automotive and medical supply chain requirements. |
| Low RSS(ON) @ 4.5 V | 6.3 mΩ at VGS = 4.5 V ensures full enhancement with standard logic-level drivers, eliminating need for gate boosters. |
Applications
| Battery Protection Circuit | USB-C Load Switch |
|---|---|
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs for tablets and power banks. IC Role / Device Role / Timing Role: Dual-MOSFET back-to-back configuration blocks reverse current and isolates faults during charging/discharging cycles. Use Value: 4.8 mΩ RSS(ON) minimizes voltage drop across protection FETs, preserving battery runtime and enabling accurate current sensing. |
Use Scenario: Power path control for USB-C ports in docking stations and multi-port chargers. IC Role / Device Role / Timing Role: High-side load switch managing 3 A–5 A VBUS delivery with fast turn-on/turn-off (tD(ON) = 5.6 ns, tF = 20.9 ns). Use Value: Low Qg (17.7 nC) and fast switching reduce power loss during hot-plug events and improve system responsiveness. |
| Smartphone Power Management | Wireless Earbud Charging Case |
Use Scenario: Dynamic load switching between PMIC rails and peripheral subsystems (e.g., display backlight, camera flash). IC Role / Device Role / Timing Role: Dual-channel switch enabling independent power gating of two 3.3 V domains with minimal cross-talk. Use Value: Independent gate terminals (Pins 1 & 6) allow separate PWM control, supporting staggered sequencing and leakage reduction in sleep modes. |
Use Scenario: Battery isolation and charging control in compact earbud cases with integrated Qi receiver and dual-battery storage. IC Role / Device Role / Timing Role: Compact dual-FET manages main battery discharge and earbud compartment charging with shared drain architecture. Use Value: 3.5 mm × 1.9 mm footprint and 0.11 mm height fit within <100 mm³ case volume constraints while delivering 11.5 A at 4.5 V drive. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFG-7 | Single N-channel, 2.5 mΩ @ 10 V, 17 A IS, same X4-DSN3519-6 package but no dual-gate structure. | Lacks independent channel control; suitable only for single-path switching where redundancy or sequencing is unnecessary. | Select when higher current per channel is needed and dual-gate functionality is not required. |
| AOB2036L | SO-8 packaged dual N-channel, 3.6 mΩ @ 10 V, 20 A per channel, RθJA = 40 °C/W - larger footprint (4.9 mm × 6.0 mm), 1.05 mm height. | Better thermal performance but incompatible with ultra-thin designs; requires rework of PCB layout and assembly process. | Select when thermal headroom is critical and board space allows SO-8 placement. |
Compared with DMN3006SCA6-7, DMN3025LFG-7 offers lower RSS(ON) but forfeits dual-channel flexibility, while AOB2036L provides superior power handling and cooling at the cost of 10× greater Z-height and 3× larger footprint - making DMN3006SCA6-7 optimal for miniaturized, dual-rail battery systems.
Availability
DMN3006SCA6-7 is available at Aetrix Electronics and suitable for battery protection, USB-C load switching, and smartphone power management requiring stable component supply and consistent lead-free compliance.
Supply support for DMN3006SCA6-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers in Asia, Europe, and the U.S., and manufacturing in China, Taiwan, and the Philippines.
This part belongs to Diodes' DSN-series ultra-thin power MOSFET product line, engineered specifically for space-constrained portable electronics requiring high current density, low-profile packaging, and robust gate reliability.
FAQ
What is the maximum continuous drain current for DMN3006SCA6-7 at +70°C ambient?
At +70°C ambient temperature and VGS = 8 V, the continuous source current is rated at 10.5 A. This value is derived from thermal derating of the 13.0 A +25°C rating using the specified RθJA = 68 °C/W and maximum junction temperature of +150°C, validated per JEDEC test conditions on FR-4 PCB with minimum recommended copper area.
Can DMN3006SCA6-7 be used in a back-to-back configuration for AC blocking?
Yes - its dual N-channel structure with independent gates and sources enables true back-to-back connection (Source1–Drain–Source2) to block bidirectional current flow, commonly used in battery protection ICs. The matched characteristics ensure balanced voltage sharing, and the 30 V VSSS rating supports up to ±15 V differential blocking.
Is the X4-DSN3519-6 package compatible with standard reflow profiles for lead-free soldering?
Yes - the package uses NiPdAu or NiAu terminal finish and is qualified per MIL-STD-202, Method 208 for solderability. It complies with IPC/JEDEC J-STD-020 moisture sensitivity level 1, allowing unlimited floor life and compatibility with standard Pb-free reflow profiles (peak 260°C, 60-second duration above 217°C).
Does DMN3006SCA6-7 integrate body diode reverse recovery protection?
No - it does not include active reverse recovery control circuitry. However, its intrinsic body diode exhibits typical forward voltage of 0.95 V at 5 A and IS = 5 A, with reverse recovery characteristics defined by Ciss = 2235 pF and Crss = 274 pF, suitable for non-synchronous buck or linear regulator applications where controlled commutation is managed externally.
DMN3006SCA6-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2235pF @ 15V
- Power - Max:
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X4-DSN3519-6
DMN3006SCA6-7 FAQ
1.How can I place an order for DMN3006SCA6-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3006SCA6-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3006SCA6-7 reliable?
The price and inventory of DMN3006SCA6-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3006SCA6-7 is usually 5 days.
3.What payment methods are accepted for DMN3006SCA6-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3006SCA6-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3006SCA6-7?
DMN3006SCA6-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3006SCA6-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3006SCA6-7?
For technical support, including DMN3006SCA6-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3006SCA6-7 requirements.
6.How does Aetrix verify that DMN3006SCA6-7 is sourced from the original manufacturer or authorized distributors?
All DMN3006SCA6-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3006SCA6-7 meets industry standards.
7.What is the process for return or replacement of DMN3006SCA6-7?
All DMN3006SCA6-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3006SCA6-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3006SCA6-7 part is unused and in its original packaging.
Return procedure for DMN3006SCA6-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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