Diodes Incorporated DMN3007LSSQ-13
- Part No.:
- DMN3007LSSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3007LSSQ-13.pdf
- Description:
- MOSFET N-CHANNEL 30V 16A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:1,698
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Product details
Overview
DMN3007LSSQ-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SO-8 package, rated for 16A continuous drain current at 25°C, with RDS(ON) of 7 mΩ @ VGS = 10V and 10 mΩ @ VGS = 4.5V, qualified to AEC-Q101 for automotive power management.
For engineers reviewing the DMN3007LSSQ-13 datasheet, DMN3007LSSQ-13 pinout, DMN3007LSSQ-13 application, or DMN3007LSSQ-13 equivalent, key selection criteria include low gate threshold (1.3–2.1 V), fast switching (td(on) = 10.3 ns), low input capacitance (Ciss = 2714 pF), and thermal resistance (RθJA = 50 °C/W) in automotive-grade SO-8 packaging.
Technical Context
This MOSFET employs planar trench-gate technology optimized for low RDS(ON) while maintaining robust switching performance. Its 1.3–2.1 V gate threshold enables direct drive from 3.3 V and 5 V logic controllers, and its low Ciss/Coss ratio supports high-frequency DC-DC operation up to 1 MHz.
The device integrates an intrinsic body diode with VSD = 0.67–1.2 V at IS = 2.3 A and exhibits normalized RDS(ON) drift of ≤1.6× across –55°C to +150°C ambient, supporting stable conduction in thermally demanding engine-bay and infotainment power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V automotive rail and 24 V industrial bus applications. |
| RDS(ON) | 7 mΩ @ VGS = 10 V, 10 mΩ @ VGS = 4.5 V - Enables <1.6 W conduction loss at 16 A, critical for thermally constrained PCB layouts. |
| ID (continuous) | 16 A @ TA = 25°C - Supports high-current synchronous rectification in buck converters and motor drivers. |
| Qg | 31.2–64.2 nC - Low total gate charge reduces driver power demand and improves efficiency in high-frequency PWM stages. |
| Ciss | 2714 pF - Minimizes Miller effect and enables clean turn-on/turn-off with standard gate drivers. |
| TJ range | –55°C to +150°C - Validated for under-hood automotive environments per AEC-Q101 stress testing. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), molded green plastic housing, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for parallel internal die elements; low-inductance multi-pin layout reduces switching loop inductance. |
| 5, 6, 7, 8 | Drain (D) | High-current drain terminals tied to exposed copper pad; designed for thermal transfer to PCB ground plane. |
| Gate (G) | Control terminal | Single-pin gate input (Pin 3 not used as source in this variant); requires <2.1 V to fully enhance, compatible with 3.3 V microcontrollers. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 10 mΩ enables efficient operation from 5 V supply rails without level-shifting circuitry. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and ESD testing per JEDEC standards. |
| Green compound & lead-free | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets global environmental compliance mandates. |
| Fast switching speed | td(on) = 10.3 ns and tf = 43.6 ns support >500 kHz DC-DC conversion with minimal switching loss. |
Applications
| Automotive LED Backlighting | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Driving high-brightness LED strings in instrument clusters and center displays using PWM dimming at 1–5 kHz. IC Role / Device Role / Timing Role: High-side or low-side switch controlling LED current path; operates in linear or saturated mode depending on dimming scheme. Use Value: 7 mΩ RDS(ON) limits self-heating to <0.5 W at 12 A, preserving display brightness stability over temperature. |
Use Scenario: Bidirectional power path control in USB-C PD 3.0 sink applications requiring 20 V/5 A capability. IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS connection with controlled slew rate and reverse-current blocking. Use Value: Low VGS(th) ensures reliable turn-on from 3.3 V PD controller GPIO; body diode forward voltage <1.2 V prevents backfeed during fault conditions. |
| Automotive DC-DC Converter | Industrial Motor Driver Half-Bridge |
Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter powering ADAS camera modules. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; commutates at 250–600 kHz with gate driver IC. Use Value: Ciss/Coss ratio of ~6.2 minimizes shoot-through risk and improves light-load efficiency by >3% vs. legacy MOSFETs. |
Use Scenario: High-side switch in 24 V brushed DC motor driver for HVAC actuators and seat controls. IC Role / Device Role / Timing Role: N-channel high-side switch driven via charge pump; handles 13.5 A peak load current with 100% duty cycle capability. Use Value: RDS(ON) drift <15% from –40°C to +125°C ensures consistent torque delivery across vehicle operating envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSSQ-13 | RDS(ON) = 25 mΩ @ 4.5 V, lower Qg (17.5 nC), same SO-8 package | Better suited for ultra-low-power standby circuits where conduction loss is secondary to gate drive energy | Select when optimizing for <100 µA quiescent current in always-on systems |
| IPD25N031ATMA2 | Higher VDSS (30 V), lower RDS(ON) (2.5 mΩ @ 10 V), TO-252 package | Requires PCB redesign due to DPAK footprint and lacks AEC-Q101 qualification | Choose only for non-automotive industrial designs needing sub-3 mΩ conduction with higher thermal mass |
Compared with DMN3007LSSQ-13, DMN3025LSSQ-13 trades conduction loss for gate drive efficiency in low-duty-cycle applications, while IPD25N031ATMA2 delivers superior RDS(ON) but sacrifices automotive qualification and surface-mount compatibility-making DMN3007LSSQ-13 the optimal balance of AEC-Q101 compliance, SO-8 integration, and 10 mΩ@4.5 V performance.
Availability
DMN3007LSSQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, USB-C power delivery switches, and DC-DC converters requiring stable component supply with full AEC-Q101 traceability and PPAP documentation.
Supply support for DMN3007LSSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN3007LSSQ-13 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V automotive subsystems including infotainment, body electronics, and ADAS power stages.
FAQ
Is DMN3007LSSQ-13 suitable for high-side switching with 12 V gate drive?
Yes. With a maximum gate threshold voltage of 2.1 V and guaranteed enhancement at VGS ≥ 4.5 V, the DMN3007LSSQ-13 fully turns on using standard 12 V gate drivers. Its RDS(ON) remains stable below 7.9 mΩ at 15 A, and the SO-8 package supports thermal dissipation up to 2.5 W with proper PCB copper area.
Does DMN3007LSSQ-13 have avalanche rating?
No. The datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (EAS) ratings. It is intended for clamped inductive loads or applications with external protection; designers must implement snubbers or freewheeling paths to avoid voltage overshoot beyond 30 V.
What is the maximum allowable PCB trace width for the source and drain pads?
Per Diodes' recommended SO-8 pad layout (AP02001), each source pad (Pins 1–4) and drain pad (Pins 5–8) should be 3.85 mm × 1.55 mm minimum, with ≥0.6 mm thermal relief spokes connecting to internal ground planes. For 16 A continuous current, IPC-2221 suggests ≥3.2 mm trace width on 2 oz. copper with 20°C rise.
Can DMN3007LSSQ-13 replace Si7850DP in existing designs?
No. Although both are SO-8 N-channel MOSFETs, Si7850DP has dual-die configuration (two independent FETs), while DMN3007LSSQ-13 is a single-channel device with different pinout (source/drain shared across multiple pins). Direct replacement would require PCB layout revision and gate drive revalidation.
DMN3007LSSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2714 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
DMN3007LSSQ-13 FAQ
1.How can I place an order for DMN3007LSSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3007LSSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3007LSSQ-13 reliable?
The price and inventory of DMN3007LSSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3007LSSQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3007LSSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3007LSSQ-13 transactions.
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4.How is shipping managed for DMN3007LSSQ-13?
DMN3007LSSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3007LSSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3007LSSQ-13?
For technical support, including DMN3007LSSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3007LSSQ-13 requirements.
6.How does Aetrix verify that DMN3007LSSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3007LSSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3007LSSQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3007LSSQ-13?
All DMN3007LSSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3007LSSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3007LSSQ-13 part is unused and in its original packaging.
Return procedure for DMN3007LSSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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