My Inquiry
My Account
Diodes Incorporated DMN3008SCP10-7
- Part No.:
- DMN3008SCP10-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
DMN3008SCP10-7.pdf
- Description:
- MOSFET BVDSS: 25V 30V X4-DSN3415
- Quantity:
- Payment:
- Shipping:
Inventory:6,487
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN3008SCP10-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 10-pin DSN3415 package, rated for 30V VSSS, 7.8 mΩ RSS(ON) at VGS = 10 V, and 14.6 A continuous source current at TA = +25°C. It integrates ESD protection (2 kV HBM), operates from −55°C to +150°C, and serves as a high-efficiency load switch in battery protection circuits.
For engineers reviewing the DMN3008SCP10-7 datasheet, DMN3008SCP10-7 pinout, DMN3008SCP10-7 application, or DMN3008SCP10-7 equivalent, key selection criteria include its dual-source configuration, low RSS(ON) at 4.5 V gate drive, thermal resistance of 46.9°C/W, and X4-DSN3415-10 package compatibility with space-constrained portable power designs.
Technical Context
This device implements two independent N-channel MOSFETs in a single ultra-thin (0.2 mm) lead-free DFN package, sharing no internal connection between channels-confirmed by the equivalent circuit showing isolated S1/G1 and S2/G2 terminals. Its gate threshold voltage (1.3–2.3 V) and low 4.5 V RSS(ON) (11 mΩ) enable direct interfacing with 3.3 V logic controllers without level shifting.
The dual structure supports bidirectional current control in battery management ICs, where one channel handles charge path and the other manages discharge path. Thermal performance is validated under JEDEC-standard FR-4 mounting (1 in² copper), with RθJA = 46.9°C/W and transient thermal response characterized per Figure 13.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 30 V - Maximum source-to-source blocking voltage; defines safe operating range in battery stack isolation. |
| RSS(ON) @ VGS = 10 V | 7.8 mΩ - Measured at IS = 7.0 A; enables <100 mW conduction loss at 10 A per channel. |
| RSS(ON) @ VGS = 4.5 V | 11 mΩ - Validated at same test condition; supports 3.3 V GPIO-driven load switching without gate driver. |
| IS Continuous @ TA = +25°C | 14.6 A - Per-channel rating on standard FR-4 board; derates to 11.6 A at 70°C ambient. |
| Qg @ 10 V | 31.3 nC - Total gate charge; determines required drive strength for <1 µs switching transitions at 1 MHz. |
| TJ Range | −55°C to +150°C - Full industrial temperature operation; critical for automotive body electronics and power tool BMS. |
| Ciss | 1476 pF - Input capacitance at VSS = 15 V; impacts gate drive loop stability and EMI filtering requirements. |
Pinout & Package
Package: X4-DSN3415-10 - 3.37 mm × 1.47 mm × 0.20 mm ultra-thin dual-channel DFN with exposed thermal pad (no leads); moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source terminal of Channel 1 | Primary current return path for first MOSFET; electrically isolated from S2 and all gate pins. |
| G1 | Gate terminal of Channel 1 | Controls turn-on/turn-off of Channel 1; referenced to S1; requires ≤±20 V drive. |
| S2 | Source terminal of Channel 2 | Independent return path for second MOSFET; not internally connected to S1 or substrate. |
| G2 | Gate terminal of Channel 2 | Separate control input for Channel 2; identical electrical specs to G1 but fully isolated. |
| EP | Exposed thermal pad | Connected to PCB ground plane for thermal dissipation; contributes to RθJA = 46.9°C/W rating. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables separate control of charge/discharge paths in battery protection ICs without external isolation components. |
| ESD protection diode (G-S) | Built-in 2 kV HBM protection per gate-source path eliminates need for external TVS in handheld product layouts. |
| Low-profile DFN package | 0.2 mm height allows integration into slim consumer devices (e.g., wireless earbuds, wearables) with strict Z-axis constraints. |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 3 reporting; contains <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - compliant for global RoHS markets. |
| Optimized gate charge profile | Qgd/Qg ratio of 20% (6.3/31.3 nC) reduces Miller effect, enabling stable 1 MHz switching with minimal overshoot. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Dual-MOSFET configuration in smart battery packs to independently interrupt charge and discharge paths during overvoltage, overcurrent, or overtemperature events. IC Role / Device Role / Timing Role: Acts as back-to-back switch pair controlled by battery management IC; each channel handles unidirectional current flow with <100 ns response to fault signals. Use Value: Eliminates need for discrete diodes or complex gate drivers; 7.8 mΩ RSS(ON) limits power loss to <0.8 W at 9 A, extending runtime in Li-ion packs. |
Use Scenario: In-line power path control for USB-C PD sink devices requiring dynamic 5–20 V input handling with reverse-current blocking. IC Role / Device Role / Timing Role: One channel blocks reverse current from VBUS to port; the other controls forward current to system rail - both driven by PD controller GPIOs. Use Value: 4.5 V RSS(ON) of 11 mΩ ensures <1.1 W loss at 10 A, meeting USB-IF thermal limits; 0.2 mm profile fits within 0.8 mm board stackup. |
| Power Bank Charge Management | Wireless Charging Transmitter Control |
|
Use Scenario: Managing bidirectional power flow between Li-ion cells and USB-C input/output ports in multi-cell portable chargers. IC Role / Device Role / Timing Role: Functions as synchronous rectifier and isolation switch; channels sequenced to prevent shoot-through during mode transitions. Use Value: Dual-channel integration reduces PCB area by 40% vs. discrete MOSFETs; 14.6 A rating supports 65 W fast charging without parallel devices. |
Use Scenario: Enabling/disabling power delivery to Qi-compliant transmitter coils based on foreign object detection (FOD) status. IC Role / Device Role / Timing Role: High-side switch controlling DC input to full-bridge inverter; gate driven by FOD comparator output with <500 ns latency. Use Value: 30 V rating withstands 24 V supply transients; 2 kV HBM ESD protection prevents latch-up during coil coupling noise events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Single-channel, 30 V, 25 mΩ @ 10 V, SOT-26 package; lacks dual topology and ESD diode. | Requires two devices and external ESD protection for equivalent functionality; larger footprint (3.0 × 2.5 mm). | Select when cost-per-channel is prioritized over board area and integrated protection. |
| AOB410L | Dual-channel, 30 V, 10.5 mΩ @ 10 V, 5×6 mm TDFN; higher RSS(ON) at 4.5 V (15 mΩ), no built-in G-S diode. | Needs external 2 kV HBM protection; 0.8 mm height limits use in ultra-thin devices. | Prefer when higher current (20 A/channel) and thermal mass outweigh Z-height constraints. |
Compared with DMN3008SCP10-7, DMN3025LSD-13 increases component count and layout complexity for dual-path functions, while AOB410L trades off 0.2 mm height and 4.5 V drive capability for higher current headroom - making DMN3008SCP10-7 optimal for space- and logic-voltage-constrained battery systems.
Availability
DMN3008SCP10-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery load switches, and wireless charging transmitter control requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for DMN3008SCP10-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMN3008SCP10-7 belongs to Diodes' DSN-series ultra-thin MOSFET product line, engineered specifically for compact, high-efficiency battery management and portable power applications where Z-height, thermal performance, and integrated ESD protection are critical.
FAQ
Is DMN3008SCP10-7 pin-compatible with other DSN3415 packages?
No - DMN3008SCP10-7 uses a proprietary 10-pin X4-DSN3415-10 layout with two isolated source/gate pairs and an exposed thermal pad. Other DSN3415 variants (e.g., single-channel) have different pin counts and terminal assignments; mechanical drawings confirm unique pad geometry and terminal numbering.
What is the maximum pulsed source current rating?
The pulsed source current (ISM) is rated at 80 A per channel at TA = +25°C, defined under repetitive pulse conditions with pulse width limited by junction temperature. This value is validated per Notes 6 and 7 in the datasheet using test circuit 8 with RL = 2.1 Ω.
Does the device require external gate resistors for ESD robustness?
No - the integrated gate-source protection diode provides 2 kV HBM ESD immunity per channel, eliminating the need for external series gate resistors in typical battery management layouts. External resistors may still be used for switching speed control but are not required for ESD compliance.
Can DMN3008SCP10-7 operate reliably at 150°C junction temperature?
Yes - the device is rated for TJ = −55°C to +150°C, and RSS(ON) variation is characterized up to 150°C (Figure 5). At 150°C and VGS = 10 V, RSS(ON) increases to ~1.4× room-temperature value (≈11 mΩ), remaining within functional limits for protected load-switch applications.
DMN3008SCP10-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1476 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
DMN3008SCP10-7 FAQ
1.How can I place an order for DMN3008SCP10-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3008SCP10-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3008SCP10-7 reliable?
The price and inventory of DMN3008SCP10-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3008SCP10-7 is usually 5 days.
3.What payment methods are accepted for DMN3008SCP10-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3008SCP10-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3008SCP10-7?
DMN3008SCP10-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3008SCP10-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3008SCP10-7?
For technical support, including DMN3008SCP10-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3008SCP10-7 requirements.
6.How does Aetrix verify that DMN3008SCP10-7 is sourced from the original manufacturer or authorized distributors?
All DMN3008SCP10-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3008SCP10-7 meets industry standards.
7.What is the process for return or replacement of DMN3008SCP10-7?
All DMN3008SCP10-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3008SCP10-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3008SCP10-7 part is unused and in its original packaging.
Return procedure for DMN3008SCP10-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3008SCP10-7 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
